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    A26 TRANSISTOR Search Results

    A26 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BLA1011-300
    		Rochester Electronics LLC BLA1011-300 - 300W LDMOS Avionics Power Transistor PDF Buy
    54F151LM/B
    		Rochester Electronics LLC 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL PDF Buy
    ICL7667MJA
    		Rochester Electronics LLC ICL7667 - Buffer/Inverter Based MOSFET Driver, CMOS, CDIP8 PDF Buy
    93L422ADM/B
    		Rochester Electronics LLC 93L422A - 256 x 4 TTL SRAM PDF Buy
    54F151/BEA
    		Rochester Electronics LLC 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL, CDIP16 - Dual marked (M38510/33901BEA) PDF Buy

    A26 TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    OPA2662

    Abstract: operational amplifier discrete schematic BUF601 data sheet 74hc237 2N3906 74HC237 OPA2662AP OPA2662AU SOL16 package crt 08 3m
    Contextual Info: OP OPA2662 A26 62 OP A26 62 Dual, Wide Bandwidth OPERATIONAL TRANSCONDUCTANCE AMPLIFIER FEATURES DESCRIPTION ● 370MHz BANDWIDTH ● 58mA/ns SLEW RATE The OPA2662 is a versatile driver device for ultra wide-bandwidth systems, including high-resolution video, RF and IF circuitry, communications and test


    Original     		opa2662370mhz58ma/ns16-pin+12sol-16250mhz400mbit/soperational amplifier discrete schematicbuf601data sheet 74hc2372n390674hc237opa2662apopa2662ausol16 packagecrt 08 3m PDF

    Contextual Info: A26/SMA26 Cascadable Amplifier 10 to 1500 MHz Rev. V5 Features Product Image • HIGH GAIN - TWO STAGES: 20.5 dB TYP. • HIGH OUTPUT LEVEL: +15 dBm (TYP.) • LOW VSWR: <1.4:1 (TYP.) Description The A26 RF amplifier is a discrete hybrid design, which uses


    Original     		a26/sma26mil-std-883 PDF

    OPA2662

    Abstract: BUF601 2N3906 74HC237 OPA2662AP OPA2662AU OPA602 ota amplifier
    Contextual Info: OP A26 62 OPA2662 OP A26 62 Wide-Bandwidth, Dual Power OPERATIONAL TRANSCONDUCTANCE AMPLIFIER FEATURES DESCRIPTION ● 370MHz BANDWIDTH ● 58mA/ns SLEW RATE The OPA2662 is a versatile driver device for ultra wide-bandwidth systems, including high-resolution


    Original     		opa2662370mhz58ma/ns16-pin+9250mhz400mbit/sbuf6012n390674hc237opa2662apopa2662auopa602ota amplifier PDF

    SMA26

    Abstract: CA26
    Contextual Info: Cascadable Amplifier 10 to 1500 MHz A26 / SMA26 V4 Features Product Image • HIGH GAIN - TWO STAGES: 20.5 dB TYP. • HIGH OUTPUT LEVEL: +15 dBm (TYP.) • LOW VSWR: <1.4:1 (TYP.) Description The A26 RF amplifier is a discrete hybrid design, which uses


    Original     		sma26mil-std-883ca26 PDF

    WJ-A26

    Contextual Info: WJ-A26 / SMA26 10 to 1500 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH GAIN -TWO STAGES: 20.5 dB TYP. HIGH OUTPUT LEVEL: +15 dBm (TYP.) LOW VSWR: < 1.4:1 (TYP.) Outline Drawings A26 0.200 (5-08) Specifications51 Guaranteed


    OCR Scan     		wj-a26sma2650-ohm PDF

    WJ-A26

    Abstract: transistor bc 207 WJ-CA26 m 9669 transistor Bc 287 WJA26
    Contextual Info: u j U A26/SMA26 10 to 1500 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH GAIN -TWO STAGES: 20.5 dB TYP. HIGH OUTPUT LEVEL: +15 dBm (TYP.) LOW VSWR: <1.4:1 (TYP.) Outline Drawings A26 Specifications* Characteristics Frequency (Min.)


    OCR Scan     		a26/sma261-800-wj1-4401wj-a26transistor bc 207+4wj-ca26m 9669transistor bc 287wja26 PDF

    OPA2662

    Abstract: BUF601 OPA2662AP OPA2662AU 74HC237 sbos011
    Contextual Info: OP OPA2662 A26 62 OP A26 62 Dual, Wide Bandwidth OPERATIONAL TRANSCONDUCTANCE AMPLIFIER FEATURES DESCRIPTION ● 370MHz BANDWIDTH ● 58mA/ns SLEW RATE The OPA2662 is a versatile driver device for ultra wide-bandwidth systems, including high-resolution video, RF and IF circuitry, communications and test


    Original     		opa2662370mhz58ma/ns16-pin+7sol-16250mhzbuf601opa2662apopa2662au74hc237sbos011 PDF

    142EN1

    Abstract: RQ-70 diode E-2106 OPA2662 BUF601
    Contextual Info: OP OPA2662 A26 62 OP A26 62 Dual, Wide Bandwidth OPERATIONAL TRANSCONDUCTANCE AMPLIFIER FEATURES DESCRIPTION ● 370MHz BANDWIDTH ● 58mA/ns SLEW RATE The OPA2662 is a versatile driver device for ultra wide-bandwidth systems, including high-resolution video, RF and IF circuitry, communications and test


    Original     		opa2662370mhz58ma/ns400mbit/s+616-pinsol-16142en1rq-70 diodee-2106buf601 PDF

    OPA2662

    Abstract: 07-VN BUF601 operational amplifier discrete schematic 74HC237 OPA2662AP OPA2662AU UA610
    Contextual Info: OP OPA2662 A26 62 OP A26 62 Dual, Wide Bandwidth OPERATIONAL TRANSCONDUCTANCE AMPLIFIER FEATURES DESCRIPTION ● 370MHz BANDWIDTH ● 58mA/ns SLEW RATE The OPA2662 is a versatile driver device for ultra wide-bandwidth systems, including high-resolution video, RF and IF circuitry, communications and test


    Original     		opa2662370mhz58ma/ns16-pin+9sol-16250mhz07-vnbuf601operational amplifier discrete schematic74hc237opa2662apopa2662auua610 PDF

    a26 transistor

    Abstract: 15002 SMA26 CA26
    Contextual Info: A26/SMA26 Cascadable Amplifier 10 to 1500 MHz Rev. V5 Features Product Image • HIGH GAIN - TWO STAGES: 20.5 dB TYP. • HIGH OUTPUT LEVEL: +15 dBm (TYP.) • LOW VSWR: <1.4:1 (TYP.) Description The A26 RF amplifier is a discrete hybrid design, which uses


    Original     		a26/sma26mil-std-883sma26a26 transistor+215002ca26 PDF

    SMA26

    Abstract: CA26
    Contextual Info: A26/SMA26 10 TO 1500 MHz CASCADABLE AMPLIFIER • HIGH GAIN - TWO STAGES: 20.5 dB TYP. · HIGH OUTPUT LEVEL: +15 dBm (TYP.) · LOW VSWR: <1.4:1 (TYP.) Typical Performance @ 25°C Specifications (Rev. Date: 11/00)* Characteristics Typical Frequency Small Signal Gain (min.)


    Original     		a26/sma26sma26ca26 PDF

    Contextual Info: A26/SMA26 10 TO 1500 MHz CASCADABLE AMPLIFIER • HIGH GAIN - TWO STAGES: 20.5 dB TYP. · HIGH OUTPUT LEVEL: +15 dBm (TYP.) · LOW VSWR: <1.4:1 (TYP.) Typical Performance @ 25°C Specifications (Rev. Date: 11/00)* Characteristics Typical Frequency Small Signal Gain (min.)


    Original     		a26/sma26sma26 PDF

    mpsa25

    Contextual Info: MPSA27 CASE 29-04, STYLE 1 TO-92 TO-226AA MAXIMUM RATINGS Rating Symbol MPS-A25 MPS-A26 MPS-A27 C cllector-E m itter Voltage VCES Em itter-Base Voltage v EBO 40 50 60 Unit Vdc 10 Vdc Collector C urrent — C ontinuous >C 500 m A dc Total Device D issipation


    OCR Scan     		mpsa27o-226aamps-a25mps-a26+2mps-a27mpsa25 PDF

    ci 4093

    Abstract: K9S1208
    Contextual Info: K9D1G08V0M/A-SSB0 K9S1208V0M/A-SSB0 SmartMediaTM Document Title 64MB & 128MB SmartMediaTM Card Revision History Revision No History Draft Date Remark 0.0 Initial issue Mar. 30th 2001 Preliminary 0.1 1. Changed DC characteristics Apr. 7th 2001 Min Typ Max Sequential Read


    Original     		k9d1g08v0m/a-ssb0k9s1208v0m/a-ssb0128mbci 4093+1k9s1208 PDF

    Contextual Info: Preliminary FLASH MEMORY K9T1G08U0M Document Title 128M x 8 Bits NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. Aug. 7th 2003 Advanced 0.1 tR is changed. [Old : 12µs Max. , New :15µs(Max.)] Oct. 20th 2003 Preliminary


    Original     		k9t1g08u0m PDF

    K9T1G08U0M

    Abstract: K9T1G08U0M-V K9T1G08U0M-Y SAMSUNG 256Mb NAND Flash Qualification Reliability
    Contextual Info: FLASH MEMORY K9T1G08U0M Document Title 128M x 8 Bits NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. Aug. 7th 2003 Advanced 0.1 tR is changed. [Old : 12µs Max. , New :15µs(Max.)] Oct. 20th 2003 Preliminary 0.2


    Original     		k9t1g08u0mk9t1g08u0m-vk9t1g08u0m-ysamsung 256mb nand flash qualification reliability PDF

    SAMSUNG 256Mb NAND Flash Qualification Reliability

    Abstract: K9T1G08B0M-FCB0
    Contextual Info: Preliminary FLASH MEMORY K9T1G08B0M Document Title 128M x 8 Bits NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. Nov. 8th 2004 Advanced 0.1 1.Program/Erase characteristics note1 is added 2.Technical note is changed


    Original     		k9t1g08b0msamsung 256mb nand flash qualification reliabilityk9t1g08b0m-fcb0 PDF

    K9T1G08U0M-YCB0

    Abstract: K9T1G08U0M K9T1G08U0M-V K9T1G08U0M-VCB0 K9T1G08U0M-Y
    Contextual Info: K9T1G08U0M-YCB0,YIB0,PCB0,PIB0 K9T1G08U0M-VCB0,VIB0,FCB0,FIB0 FLASH MEMORY Document Title 128M x 8 Bits NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. Aug. 7th 2003 Advanced 0.1 tR is changed. [Old : 12µs Max. , New :15µs(Max.)]


    Original     		k9t1g08u0m-ycb0k9t1g08u0m-vcb0k9t1g08u0mk9t1g08u0m-v+1k9t1g08u0m-y PDF

    TwB 75

    Abstract: SAMSUNG 256Mb NAND Flash Qualification Reliability K9T1G08U0M K9T1G08U0M-V K9T1G08U0M-Y Samsung Flash
    Contextual Info: Preliminary FLASH MEMORY K9T1G08U0M Document Title 128M x 8 Bits NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. Aug. 7th 2003 Advanced 0.1 tR is changed. [Old : 12µs Max. , New :15µs(Max.)] Oct. 20th 2003 Preliminary


    Original     		k9t1g08u0mtwb 75samsung 256mb nand flash qualification reliabilityk9t1g08u0m-v+2k9t1g08u0m-ysamsung flash PDF

    K9T1G08U0M-V

    Abstract: K9T1G08U0M-VCB0 K9T1G08U0M-Y K9T1G08U0M-YCB0
    Contextual Info: K9T1G08U0M-YCB0,YIB0,PCB0,PIB0 K9T1G08U0M-VCB0,VIB0,FCB0,FIB0 FLASH MEMORY Document Title 128M x 8 Bits NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. Aug. 7th 2003 Advanced 0.1 tR is changed. [Old : 12µs Max. , New :15µs(Max.)]


    Original     		k9t1g08u0m-ycb0k9t1g08u0m-vcb0k9t1g08u0m-vk9t1g08u0m-y PDF

    K9K1G08U0M-YCB0

    Abstract: IC 4093 K9K1G08U0M K9K1G08U0M-YIB0
    Contextual Info: FLASH MEMORY K9K1G08U0M Document Title 128M x 8 Bit NAND Flash Memory Revision History History Draft Date 0.0 0.1 1. Initial issue 1.[Page 31] device code 76h -> device code (79h) Apr. 7th 2001 Jul. 3rd 2001 0.2 1.Powerup sequence is added : Recovery time of minimum 1µs is required before internal circuit gets


    Original     		k9k1g08u0mpage2848-pin1220f+4047maxk9k1g08u0m-ycb0ic 4093k9k1g08u0m-yib0 PDF

    a1-a10

    Contextual Info: K9K1G08U0M-YCB0, K9K1G08U0M-YIB0 FLASH MEMORY Document Title 128M x 8 Bit NAND Flash Memory Revision History History Draft Date 0.0 0.1 1. Initial issue 1.[Page 31] device code 76h -> device code (79h) Apr. 7th 2001 Jul. 3rd 2001 0.2 1.Powerup sequence is added


    Original     		k9k1g08u0m-ycb0k9k1g08u0m-yib0page2848-pin+31220f047maxa1-a10 PDF

    Contextual Info: K9K1G08U0M-YCB0, K9K1G08U0M-YIB0 FLASH MEMORY Document Title 128M x 8 Bit NAND Flash Memory Revision History History Draft Date 0.0 0.1 1. Initial issue 1.[Page 31] device code 76h -> device code (79h) Apr. 7th 2001 Jul. 3rd 2001 0.2 1.Powerup sequence is added


    Original     		k9k1g08u0m-ycb0k9k1g08u0m-yib0page2848-pin+11220f PDF

    Contextual Info: K9K1G08U0M-YCB0, K9K1G08U0M-YIB0 FLASH MEMORY Document Title 128M x 8 Bit NAND Flash Memory Revision History History Draft Date 0.0 0.1 1. Initial issue 1.[Page 31] device code 76h -> device code (79h) Apr. 7th 2001 Jul. 3rd 2001 0.2 1.Powerup sequence is added


    Original     		k9k1g08u0m-ycb0k9k1g08u0m-yib0page2848-pin+21220f047max PDF