A26 TRANSISTOR Search Results

OPA2662

Abstract: operational amplifier discrete schematic BUF601 data sheet 74hc237 2N3906 74HC237 OPA2662AP OPA2662AU SOL16 package crt 08 3m
Contextual Info: OP OPA2662 A26 62 OP A26 62 Dual, Wide Bandwidth OPERATIONAL TRANSCONDUCTANCE AMPLIFIER FEATURES DESCRIPTION ● 370MHz BANDWIDTH ● 58mA/ns SLEW RATE The OPA2662 is a versatile driver device for ultra wide-bandwidth systems, including high-resolution video, RF and IF circuitry, communications and test

Contextual Info: A26/SMA26 Cascadable Amplifier 10 to 1500 MHz Rev. V5 Features Product Image • HIGH GAIN - TWO STAGES: 20.5 dB TYP. • HIGH OUTPUT LEVEL: +15 dBm (TYP.) • LOW VSWR: <1.4:1 (TYP.) Description The A26 RF amplifier is a discrete hybrid design, which uses

OPA2662

Abstract: BUF601 2N3906 74HC237 OPA2662AP OPA2662AU OPA602 ota amplifier
Contextual Info: OP A26 62 OPA2662 OP A26 62 Wide-Bandwidth, Dual Power OPERATIONAL TRANSCONDUCTANCE AMPLIFIER FEATURES DESCRIPTION ● 370MHz BANDWIDTH ● 58mA/ns SLEW RATE The OPA2662 is a versatile driver device for ultra wide-bandwidth systems, including high-resolution

SMA26

Abstract: CA26
Contextual Info: Cascadable Amplifier 10 to 1500 MHz A26 / SMA26 V4 Features Product Image • HIGH GAIN - TWO STAGES: 20.5 dB TYP. • HIGH OUTPUT LEVEL: +15 dBm (TYP.) • LOW VSWR: <1.4:1 (TYP.) Description The A26 RF amplifier is a discrete hybrid design, which uses

WJ-A26

Contextual Info: WJ-A26 / SMA26 10 to 1500 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH GAIN -TWO STAGES: 20.5 dB TYP. HIGH OUTPUT LEVEL: +15 dBm (TYP.) LOW VSWR: < 1.4:1 (TYP.) Outline Drawings A26 0.200 (5-08) Specifications51 Guaranteed

WJ-A26

Abstract: transistor bc 207 WJ-CA26 m 9669 transistor Bc 287 WJA26
Contextual Info: u j U A26/SMA26 10 to 1500 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH GAIN -TWO STAGES: 20.5 dB TYP. HIGH OUTPUT LEVEL: +15 dBm (TYP.) LOW VSWR: <1.4:1 (TYP.) Outline Drawings A26 Specifications* Characteristics Frequency (Min.)

OPA2662

Abstract: BUF601 OPA2662AP OPA2662AU 74HC237 sbos011
Contextual Info: OP OPA2662 A26 62 OP A26 62 Dual, Wide Bandwidth OPERATIONAL TRANSCONDUCTANCE AMPLIFIER FEATURES DESCRIPTION ● 370MHz BANDWIDTH ● 58mA/ns SLEW RATE The OPA2662 is a versatile driver device for ultra wide-bandwidth systems, including high-resolution video, RF and IF circuitry, communications and test

142EN1

Abstract: RQ-70 diode E-2106 OPA2662 BUF601
Contextual Info: OP OPA2662 A26 62 OP A26 62 Dual, Wide Bandwidth OPERATIONAL TRANSCONDUCTANCE AMPLIFIER FEATURES DESCRIPTION ● 370MHz BANDWIDTH ● 58mA/ns SLEW RATE The OPA2662 is a versatile driver device for ultra wide-bandwidth systems, including high-resolution video, RF and IF circuitry, communications and test

OPA2662

Abstract: 07-VN BUF601 operational amplifier discrete schematic 74HC237 OPA2662AP OPA2662AU UA610
Contextual Info: OP OPA2662 A26 62 OP A26 62 Dual, Wide Bandwidth OPERATIONAL TRANSCONDUCTANCE AMPLIFIER FEATURES DESCRIPTION ● 370MHz BANDWIDTH ● 58mA/ns SLEW RATE The OPA2662 is a versatile driver device for ultra wide-bandwidth systems, including high-resolution video, RF and IF circuitry, communications and test

a26 transistor

Abstract: 15002 SMA26 CA26
Contextual Info: A26/SMA26 Cascadable Amplifier 10 to 1500 MHz Rev. V5 Features Product Image • HIGH GAIN - TWO STAGES: 20.5 dB TYP. • HIGH OUTPUT LEVEL: +15 dBm (TYP.) • LOW VSWR: <1.4:1 (TYP.) Description The A26 RF amplifier is a discrete hybrid design, which uses

SMA26

Abstract: CA26
Contextual Info: A26/SMA26 10 TO 1500 MHz CASCADABLE AMPLIFIER • HIGH GAIN - TWO STAGES: 20.5 dB TYP. · HIGH OUTPUT LEVEL: +15 dBm (TYP.) · LOW VSWR: <1.4:1 (TYP.) Typical Performance @ 25°C Specifications (Rev. Date: 11/00)* Characteristics Typical Frequency Small Signal Gain (min.)

Contextual Info: A26/SMA26 10 TO 1500 MHz CASCADABLE AMPLIFIER • HIGH GAIN - TWO STAGES: 20.5 dB TYP. · HIGH OUTPUT LEVEL: +15 dBm (TYP.) · LOW VSWR: <1.4:1 (TYP.) Typical Performance @ 25°C Specifications (Rev. Date: 11/00)* Characteristics Typical Frequency Small Signal Gain (min.)

mpsa25

Contextual Info: MPSA27 CASE 29-04, STYLE 1 TO-92 TO-226AA MAXIMUM RATINGS Rating Symbol MPS-A25 MPS-A26 MPS-A27 C cllector-E m itter Voltage VCES Em itter-Base Voltage v EBO 40 50 60 Unit Vdc 10 Vdc Collector C urrent — C ontinuous >C 500 m A dc Total Device D issipation

ci 4093

Abstract: K9S1208
Contextual Info: K9D1G08V0M/A-SSB0 K9S1208V0M/A-SSB0 SmartMediaTM Document Title 64MB & 128MB SmartMediaTM Card Revision History Revision No History Draft Date Remark 0.0 Initial issue Mar. 30th 2001 Preliminary 0.1 1. Changed DC characteristics Apr. 7th 2001 Min Typ Max Sequential Read

Contextual Info: Preliminary FLASH MEMORY K9T1G08U0M Document Title 128M x 8 Bits NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. Aug. 7th 2003 Advanced 0.1 tR is changed. [Old : 12µs Max. , New :15µs(Max.)] Oct. 20th 2003 Preliminary

K9T1G08U0M

Abstract: K9T1G08U0M-V K9T1G08U0M-Y SAMSUNG 256Mb NAND Flash Qualification Reliability
Contextual Info: FLASH MEMORY K9T1G08U0M Document Title 128M x 8 Bits NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. Aug. 7th 2003 Advanced 0.1 tR is changed. [Old : 12µs Max. , New :15µs(Max.)] Oct. 20th 2003 Preliminary 0.2

SAMSUNG 256Mb NAND Flash Qualification Reliability

Abstract: K9T1G08B0M-FCB0
Contextual Info: Preliminary FLASH MEMORY K9T1G08B0M Document Title 128M x 8 Bits NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. Nov. 8th 2004 Advanced 0.1 1.Program/Erase characteristics note1 is added 2.Technical note is changed

K9T1G08U0M-YCB0

Abstract: K9T1G08U0M K9T1G08U0M-V K9T1G08U0M-VCB0 K9T1G08U0M-Y
Contextual Info: K9T1G08U0M-YCB0,YIB0,PCB0,PIB0 K9T1G08U0M-VCB0,VIB0,FCB0,FIB0 FLASH MEMORY Document Title 128M x 8 Bits NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. Aug. 7th 2003 Advanced 0.1 tR is changed. [Old : 12µs Max. , New :15µs(Max.)]

TwB 75

Abstract: SAMSUNG 256Mb NAND Flash Qualification Reliability K9T1G08U0M K9T1G08U0M-V K9T1G08U0M-Y Samsung Flash
Contextual Info: Preliminary FLASH MEMORY K9T1G08U0M Document Title 128M x 8 Bits NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. Aug. 7th 2003 Advanced 0.1 tR is changed. [Old : 12µs Max. , New :15µs(Max.)] Oct. 20th 2003 Preliminary

K9T1G08U0M-V

Abstract: K9T1G08U0M-VCB0 K9T1G08U0M-Y K9T1G08U0M-YCB0
Contextual Info: K9T1G08U0M-YCB0,YIB0,PCB0,PIB0 K9T1G08U0M-VCB0,VIB0,FCB0,FIB0 FLASH MEMORY Document Title 128M x 8 Bits NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. Aug. 7th 2003 Advanced 0.1 tR is changed. [Old : 12µs Max. , New :15µs(Max.)]

K9K1G08U0M-YCB0

Abstract: IC 4093 K9K1G08U0M K9K1G08U0M-YIB0
Contextual Info: FLASH MEMORY K9K1G08U0M Document Title 128M x 8 Bit NAND Flash Memory Revision History History Draft Date 0.0 0.1 1. Initial issue 1.[Page 31] device code 76h -> device code (79h) Apr. 7th 2001 Jul. 3rd 2001 0.2 1.Powerup sequence is added : Recovery time of minimum 1µs is required before internal circuit gets

a1-a10

Contextual Info: K9K1G08U0M-YCB0, K9K1G08U0M-YIB0 FLASH MEMORY Document Title 128M x 8 Bit NAND Flash Memory Revision History History Draft Date 0.0 0.1 1. Initial issue 1.[Page 31] device code 76h -> device code (79h) Apr. 7th 2001 Jul. 3rd 2001 0.2 1.Powerup sequence is added

Contextual Info: K9K1G08U0M-YCB0, K9K1G08U0M-YIB0 FLASH MEMORY Document Title 128M x 8 Bit NAND Flash Memory Revision History History Draft Date 0.0 0.1 1. Initial issue 1.[Page 31] device code 76h -> device code (79h) Apr. 7th 2001 Jul. 3rd 2001 0.2 1.Powerup sequence is added

Contextual Info: K9K1G08U0M-YCB0, K9K1G08U0M-YIB0 FLASH MEMORY Document Title 128M x 8 Bit NAND Flash Memory Revision History History Draft Date 0.0 0.1 1. Initial issue 1.[Page 31] device code 76h -> device code (79h) Apr. 7th 2001 Jul. 3rd 2001 0.2 1.Powerup sequence is added