A256K Search Results

Contextual Info: ^ ED I _ Badronlc D aiigni Inc. EDI8F44256C Secondary Cache Memory Array Module 256Kx44 High ¡freed CMOS Secondary Cache SRAM Module to Support the R4000 CPU Feahres The EDI8F44256C is a single array multichip Static RAM module organized as a256Kx44 bits. Itcontains eleven 1l

Contextual Info: HEDI EDI8F16256C ELECTRONIC DESIGNS INC., High Speed 4 Megabit SRAM Module 256Kx16 CMOS, High Speed Programmabie, Static RAM Module Features The EDI8F16256C is a 4096K-bit high speed CMOS Static RAM Module consisting of four 4 256Kx4 Static RAMs in j-leaded (SOJ) chip carriers surface-mounted

E3276

Abstract: 24WC
Contextual Info: C ATA LY S T Preliminary CAT24WC256 256K-Bit Serial CMOS E2PROM FEATURES • 1MHz l2C Bus Compatible* ■ 1.8 to 6 Volt Operation Write Protect Feature - Entire Array Protected When WP at VIH ■ Low Power CMOS Technology 100,000 Program/Erase Cycles ■ 64-Byte Page Write Buffer

Contextual Info: ^EDI EDI8F16256C ELECTRONIC DESIGNS INC. i High Speed 4 Megabit SR AM Module 256Kx16 CMOS, High Speed Programmable, Static RAM Module Features The ED I8F16256C is a 4096K-bit high speed C M O S Static R A M Module consisting of four 4 256Kx4 Static High Density 4096K-bit C M O S Static

powerpc 405

Abstract: CHN 628 marking code H5C SMD Transistor mac 7a8 transistor PowerISA 203
Contextual Info: MPC5744P Reference Manual Document Number: MPC5744PRM Rev. 2, 06/2013 Preliminary MPC5744P Reference Manual, Rev. 2, 06/2013 2 Preliminary Freescale Semiconductor, Inc. Contents Section number Title Page Chapter 1 Preface 1.1

Contextual Info: S1E J> m MM^bSGa □Dl&^ao HM5116400L SGriGS Low Power version 4,194,304-Word x 4-Bit Dynamic Random A cce ss Memory • DESCRIPTION 7 MM ■ H I T S Product Preview L O GI C / AR RA Y S/ M E M H IT A C H I/ T -M 4 -2 3 - '2 HM5116400U Series The Hitachi HM5116400 is a CMOS dynamic RAM organized 4,194,304 words x

EDI8F16256C

Contextual Info: W D EDI8F16256C \ ELECTRONIC DESIGNS INC. High Speed 4 Megabit SRAM Module 256Kx16 CMOS, High Speed Programmable, Static RAM Module Features The EDI8F16256C is a 4096K-bit high speed CMOS Static RAM Module consisting of four 4 256Kx4 Static High Density 4096K-bit CMOS Static

Contextual Info: 256K 64K x 4-bit Static RAM Module DESCRIPTION FEATURES □ 2 5 6K (64K x 4-bit) Static RAM Module □ Advanced CMOS Technology □ High Speed — to 15 ns worst-case □ Low Power Operation Active: 900 mW Standby: 30 mW typical □ Single 5 V (±10%) Power Supply

JL-040

Abstract: IOR 450M HM-TR 30L11 42832 4283A KMF 400 LC8100 parcor 81-096
Contextual Info: > È£= i- KNo. N 4283B /sa wo I =&mmi*=ir-zlpo:r ! zL-XN*4283Afc3 < /£M \ LC 8Î I 92 , 81096 - r A LC81192, 81096 tiP A R C O R ^ ^ ;^ <t *J1 l + y 1 ? 7 * r ^120f> LC8n92 /60^ (LC81096) O ÿfe ^ ÄI ic LSI *C & « 0 i f c , >* Ü - ^ ^ - ^ ;^ ,^ * 7 ^ - Î'R 0 M (1 9 2 K e 7 h/96Ktf 7 h ),D A ^

AS4C1259

Abstract: ba816 CSR1010
Contextual Info: ASÍ? AUSTIN SEMICONDUCTOR, INC. 2? 9J ? ? Í : 256K X 1 DRAM 256K DRAM 1 DRAM X FAST PAGE MODE AVAILABLE AS MILITARY SPECIFICATIONS PIN ASSIGNMENT Top View • MIL-STD-883 18-Pin LCC 16-Pin DIP (D-2) FEATURES • Industry standard pinout and timing • All inputs, outputs and clocks are fully TTL

Contextual Info: PRELIMINARY PRODUCT INFORMATION MOS INTEGRATED CIRCUIT ¿ tP D 7 8 F 4 2 1 8 16/8-BIT SINGLE-CHIP MICROCONTROLLERS DESCRIPTION The ¿¡PD78F4218 is a product in the ¿¡PD784218 subseries in the 78K/IV series. The ¿¡PD78F4218 has a flash memory in the place of the internal ROM of the ¿¡PD784218. Data can be written

1024KX4

Abstract: DQ12-DQ15
Contextual Info: ^ED I EDI8F16256C ELECTRONIC DESIGNS INC. • High Speed 4 Megabit SRAM Module 256Kx16 CMOS, High Speed Programmable, Static RAM Module Features The EDI8F16256C is a 4096K-bit high speed CMOS Static RAM Module consisting of four 4 256Kx4 Static RAMs in j-leaded (SOJ) chipcarriers surface-mounted onto

24WC256

Abstract: CAT24WC256
Contextual Info: Preliminary CAT24WC256 256K-Bit Serial CMOS E2PROM FEATURES • 1MHz l2C Bus Compatible* ■ 1.8 to 6 Volt Operation Write Protect Feature - Entire Array Protected When WP at VIH ■ Low Power CMOS Technology 100,000 Program/Erase Cycles ■ 64-Byte Page Write Buffer

Contextual Info: 21Ü 2 Megabit Flash + 1 Megabit SRAM ComboMemory _ SST31LH021_ Advance Information FEATURES: • Organized as 256K x 8 flash + 128K x 8 SRAM • Single 3.0-3.6V Read and Write Operations Flash Fast Sector Erase and Byte Program:

HN27C256AP-12

Abstract: HN27C256AG-10 hitachi eprom DG-28 HN27C256AFP-12T HN27C256AFP-15T HN27C256AG-12 HN27C256AP-15 Hitachi Scans-001
Contextual Info: HN27C256A Series Maintenance Only 256K 32K x 8-bit UV and OTP EPROM • DESCRIPTION The Hitachi HN27C256A is a256-Kilobit Ultraviolet Erasable and One-Time Programmable Electrically Programmable Read Only Memory organized as 32,768 x 8-bits. The HN27C256A features fast address access times and low