A227 J Search Results

HWS100

Abstract: a227 HWS100 B
Contextual Info: DENSEI-LAMBDA HWS100/A SPECIFICATIONS A227-01-01/A-C 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 MODEL ITEMS Nominal Output Voltage Maximum Output Current Maximum Output Power Efficiency Typ (*1) 100VAC 200VAC Input Voltage Range

a227

Abstract: HWS100 IEC61000-3-2
Contextual Info: DENSEI-LAMBDA HWS100 SPECIFICATIONS A227-01-01C 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 Isolation Resistance 29 Vibration 30 Shock In package 31 Safety 32 33 34 35 HWS100 HWS100 HWS100 HWS100 HWS100 -5 -12 -15 -24 -48 5

a227

Abstract: MIL-STD-810F 514.5 HWS100
Contextual Info: DENSEI-LAMBDA HWS100/HD SPECIFICATIONS A227-01-01/HD HWS100 HWS100 HWS100 HWS100 HWS100 -5/HD -12/HD -15/HD -24/HD -48/HD 5 12 15 24 48 1 V 0.2 0.09 0.07 0.05 0.02 2 A 20 8.5 7 4.5 2.1 3 A 100 102 105 108 100.8 4 W 83 83 83 84 84 5 % 86 86 86 87 87 % 6 85 ~ 265VAC 47 ~ 63Hz or 120 ~ 370VDC

HWS100

Contextual Info: DENSEI-LAMBDA HWS100/ME SPECIFICATIONS A227-01-01/ME HWS100 HWS100 HWS100 HWS100 -12/ME -15/ME -24/ME -48/ME 12 15 24 48 1 V 8.5 7 4.5 2.1 2 A 102 105 108 100.8 3 W 83 83 84 84 4 % 86 86 87 87 % 5 85 - 265VAC 47 - 63Hz or 120 - 370VDC 6 A 1.3/0.65 7 14A at 100VAC, 28A at 200VAC, Ta=25°C, Cold Start

a227

Abstract: a227 j A-225 ESAB92M-03
Contextual Info: ESAB92M-03 5A LOW LOSS SUPER HIGH SPEED RECTIFIER : Features Insulated package by fully m o ld in g . iusai • «V P Low V K Connection Diagram Super high speed sw itching, High reliability by planer design. • : Applications • SSiSn i j K ' i v T ' s ?

Contextual Info: DRAW ING N o .: M 4 0 2 V F - 3 - X X X - IF IN D O U B T - XX NR ASK N O T TO S C A L E 0 .5 0 +0 .0 5 0 .2 0 + 0 .0 5 - [? T YP E M/H ijR jR ji |j| Ijji ljj L|J [|J [j|= y 2.0 01 2.5 02 1.5 2.00 3 .0, 3.5 03 2.0 2.50 4.0, 4.5 04 5.0, 5.5 05 12.0, 2.5 II I I I H

OA96

Abstract: A137 A158 A227 A231 A235 M402V a227 j
Contextual Info: IF IN DOUBT - ASK DRAWING No.: M402VM-3- XXX - XX NR <— A±0.1— > M /H o 15.5 18.5 17.5 16.0 66 16.0 19.0 18.0 16.5 16 3.5 6.5 5.5 4.0 68 16.5 19.5 18.5 17.0 18 4.0 7.0 6.0 4.5 70 17.0 20.0 19.0 17.5 20 4.5 7.5 6.5 5.0 72 17.5 20.5 19.5 18.0 8.0 22

A227

Abstract: A150 A231 A232 A235 M402
Contextual Info: DRAWING No.: M 4 0 2 V F - 3 - XXX - 0.50+0.05- IF IN DOUBT - XX NR A SK NOT TO SCALE r 0.20+0.05' iji ii iji ijiiji t r I— E — 01 1.2 1.50 2.5 3.0,3.5 4.0, 4.5 5.0, 5.5 02 03 04 05 1.5 2.0 2.5 2.00 2.50 3.00 4.00 FITTING NAIL H i3 rO o , - 0.05 „

ams-qq-p-416 type II, Class 2

Abstract: NAS 1790 NASM 17984 AMS-H-6875 AMS-S-6758 AMS-QQ-A-200 nasm ASTM a240 QQ-A-225/6 ams-qq-p-416
Contextual Info: DZUS Lockwell® LG Quick Release Pins Single Acting Pins LG-T .05 MIN .05 MIN F Selecting LG-T LG-L Styles U F F/2 D DD 15º 17.5º U C G U GRIP +.020 -.000 15º 17.5º C F/2 C F .05 MIN D T G G GRIP +.020 -.000 U Quick Access Fasteners Grip length for Lockwell pins is

Contextual Info: D RAW ING N o .: M 4 0 2 V M - 3 - X X X -•<— IF IN D O U B T - X X NR ASK N O T TO S C A L E M402VF X B- A + 0 .1 — > i -0 .5 0 + 0 .0 5 0 .2 0 +0 .0 5 1 ! 7 i ih itiiih ih iti ih ilI M /H ^P E 2.0 01 t' I H K 1.62 2.6 1 \ 11 MATING H E I G H T A

em87

Contextual Info: M A Z D A BELVU INDICATEUR D'ACCORD O UI g j avec trio d e a m p lificatrice C A R A C T E R IS T IQ U E S G E N E R A L E S C athode à chauffage in d ire ct A lim entation du filam en t en s é rie ou en p a ra llè le T e n sio n filam ent . Vf

A-225

Abstract: ESAB92M-03 T151 t19g
Contextual Info: ESAB92M-03 5 ai Outline Drawings LOW LOSS SUPER HIGH SPEED RECTIFIER 4.5” jT 0-4J • 4 # ^ I Features JEDEC Insulated package by fully m o ld in g . EIAJ SC-67 • «V P Low Vk Connection Diagram S uper high speed sw itching, High reliability by planer design.

EM-84 tube

Abstract: EM84 Mazda
Contextual Info: M AZDA BELVU INDICATEUR D'ACCORD C M QA av ec trio d e am p lificatrice C A R A C T E R IS T IQ U E S G E N E R A L E S C athode à chauffage in d ire c t A lim entation du filam ent en p a ra llè le T e n sio n filam ent . Vf

Contextual Info: ET382 TRIPLE DIFFUSED PLANER TYPE H IG H POWER DAR LING TO N IN D U S T R IA L USE POW ER SUPPLY • : Features • h FE* ''i # l - S L ' • h F£<7 U—7 Ultra h ig h ^ l)T' t)<iX'' Excellent linearity in hFE • A S O ^ '/S i' • B iff U t Excellent safe operating area

Contextual Info: Type TXA Solid Tantalum Capacitors • M allor Y GENERAL SPECIFICATIONS Extended Range Hermetically Sealed Operating Temperature: -55°C to +125°C With proper derating Voltage Range: 6 to 50 W VDC @ 85°C Reverse Voltage (Non-continuous): 15% of rated voltage @ 25°C

Contextual Info: 2SK903-MR FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F-I SERIES • Outline Drawings ■ Features • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage ■Applications • Switching regulators

2sk mosfet rf power

Abstract: 2SK903-MR DR-100 2SK903 equivalent 2sk903mr 903-MR
Contextual Info: 2SK903-MR FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F - I S E R I E S O utline D raw ings • Features • High speed sw itching • Low on-resistance • No secondary breakdown • Low driving power • High voltage ■ A p p lic a tio n s • Sw itching regulators

FX8-100/100P11-SV1J

Abstract: A226 A227 A228
Contextual Info: 0.6mm Pitch Stacking Height 3mm to 16mm Connector FX8, FX8C Series FX8 Series FX8C Series Note that FX8 series and FX8C series are not mated with each other. •Features 1. Stacking Height 3mm to 16mm available ●Stacking Height 3,4mm-FX8 Series The board to board stacking height can correspond to

FX8-100/100P11-SV1J

Abstract: A226 A227 A228
Contextual Info: The product information in this catalog is for reference only. Please request the Engineering Drawing for the most current and accurate design information. All non-RoHS products have been discontinued, or will be discontinued soon. Please check the products status on the Hirose website RoHS search at www.hirose-connectors.com, or contact your Hirose sales representative.

Contextual Info: 2 6 2 ,1 4 4 W O R D x4 PRELIMINARY B IT D Y N A M IC R A M DESCRIPTION The TC514258BP/BJ/BZ/BFT is the new generation dynamic RAM organized 262,144 words oy 4 bits. The TC514258BP/BJ/BZ/BFT utilizes TOSHIBA’S CMOS Silicon gate process technology as well as

a231 ax hen no

Abstract: BFT te 04 A225
Contextual Info: TC514258BP/BJ/BZ/BFT-60 tli I k di llki'iilii in militi, lit Lit llit. lit i t i , i. 262,144 W O R D x4 BI T D Y N A M I C * . . . i l ., PRELIMINARY RAM DESCRIPTION T he TC514258BP/BJ/BZ/BFT is Che new g en eratio n dynam ic RAM organized 262,144 words oy 4 bits.

toshiba 7 pin a215

Abstract: A227
Contextual Info: TOSHIBA TC514800AJL/AFTL70/80 524,288 WORD X 8 BIT DYNAMIC RAM DESCRIPTION The TC514800AJL/AFTL is the new generation dynamic RAM organized 524,288 word by 8 bit. The TC514800AJL/AFTL utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit

Contextual Info: TOSHIBA TC514800AJL/AFHr70/80 524,288 WORD X 8 BIT DYNAMIC RAM DESCRIPTION The TC514800AJL/AFTL is the new generation dynamic RAM organized 524,288 word by 8 bit. The TC514800AJL/AFTL utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit

Contextual Info: TOSHIBA MOS MEMORY PRODUCTS TC514 1 02J/Z-80, TC514102J / Z - 1C DESCRIPTION T h e T C 5 1 4 1 0 2 J / Z is the n e w g e n e r a t i o n d y n a m i c R A M o r g a n i z e d 4 , 1 9 4 , 3 0 4 w o r d s b y 1 bit. T h e T C 5 1 4 1 0 2 J / Z u t i l i z e s T O S H I B A ' S C M O S S i l i c o n g a t e p r o c e s s t e c h n o l o g y as w e l l