A22 PACKAGE MARKING Search Results
A22 PACKAGE MARKING Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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TPH1R306PL |
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N-ch MOSFET, 60 V, 100 A, 0.00134 Ω@10 V, SOP Advance / SOP Advance(N) | Datasheet | ||
TPH9R00CQH |
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MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) | Datasheet | ||
TPH9R00CQ5 |
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N-ch MOSFET, 150 V, 64 A, 0.009 Ω@10 V, High-speed diode, SOP Advance / SOP Advance(N) | Datasheet | ||
TPHR8504PL |
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N-ch MOSFET, 40 V, 150 A, 0.00085 Ω@10 V, SOP Advance / SOP Advance(N) | Datasheet | ||
XPH2R106NC |
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N-ch MOSFET, 60 V, 110 A, 0.0021 Ω@10V, SOP Advance(WF) | Datasheet |
A22 PACKAGE MARKING Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: EN71GL128B0 Purpose Eon Silicon Solution Inc. hereinafter called “Eon” is going to provide its products’ top marking on ICs with < cFeon > from January 1st, 2009, and without any change of the part number and the compositions of the ICs. Eon is still keeping the promise of quality for all |
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EN71GL128B0 EN29GL128 | |
ENPSL32
Abstract: EN29GL128 EN71GL128 cFeon Flash chip cFeon cFeon EN EN71GL EN71GL128B0 PSRAM top marking
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EN71GL128B0 ENPSL32 EN29GL128 EN71GL128 cFeon Flash chip cFeon cFeon EN EN71GL EN71GL128B0 PSRAM top marking | |
EN71GL128Contextual Info: EN71GL128B0 Purpose Eon Silicon Solution Inc. hereinafter called “Eon” is going to provide its products’ top marking on ICs with < cFeon > from January 1st, 2009, and without any change of the part number and the compositions of the ICs. Eon is still keeping the promise of quality for all |
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EN71GL128B0 EN29GL128 EN71GL128 | |
A22 SOT-23
Abstract: A22 SOT23 RT9161 RT9161A marking a22
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RT9161/A 300/500mA RT9161/A OT-23 300mA) OT-89 OT-223 A22 SOT-23 A22 SOT23 RT9161 RT9161A marking a22 | |
23c128
Abstract: 48-PIN
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PD23C128040BL, 23C128080BL 128M-BIT 16M-WORD 16-BIT PD23C128040BL PD23C128080BL 44-pin 23c128 48-PIN | |
23c128
Abstract: 48-PIN
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PD23C128040BL, 23C128080BL 128M-BIT 16M-WORD 16-BIT PD23C128040BL PD23C128080BL 44-pin 23c128 48-PIN | |
23c128
Abstract: 48-PIN
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PD23C128040BL, 23C128080BL 128M-BIT 16M-WORD 16-BIT PD23C128040BL PD23C128080BL 44-pin 23c128 48-PIN | |
Contextual Info: RT9166/A 300/600mA, Ultra-Fast Transient Response LDO Regulator General Description Features The RT9166/A series are CMOS low dropout regulators optimized for ultra-fast transient response. The devices are capable of supplying 300mA or 600mA of output current |
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RT9166/A 300/600mA, RT9166/A 300mA 600mA 230mV 580mV | |
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µ PD23C128000BL 128M-BIT MASK-PROGRAMMABLE ROM 16M-WORD BY 8-BIT BYTE MODE / 8M-WORD BY 16-BIT (WORD MODE) Description The µPD23C128000BL is a 134,217,728 bits mask-programmable ROM. The word organization is selectable |
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PD23C128000BL 128M-BIT 16M-WORD 16-BIT PD23C128000BL 44-pin 48-pin | |
Contextual Info: RF5125 3V TO 5V, 2.4GHz TO 2.5GHz LINEAR POWER AMPLIFIER RoHS Compliant & Pb-Free Product Typical Applications • IEEE802.11b/g/n WLAN Applications • Portable Battery-Powered Equipment • 2.5GHz ISM Band Applications • Spread-Spectrum and MMDS Systems |
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RF5125 IEEE802 11b/g/n RF5125 203mm 330mm 025mm | |
44-PIN
Abstract: 48-PIN
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PD23C128000BL 128M-BIT 16M-WORD 16-BIT PD23C128000BL 44-pin 48-pin | |
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µ PD23C128000BL 128M-BIT MASK-PROGRAMMABLE ROM 16M-WORD BY 8-BIT BYTE MODE / 8M-WORD BY 16-BIT (WORD MODE) Description The µPD23C128000BL is a 134,217,728 bits mask-programmable ROM. The word organization is selectable (BYTE |
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PD23C128000BL 128M-BIT 16M-WORD 16-BIT PD23C128000BL 44-pin 48-pin | |
44-PIN
Abstract: 48-PIN
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PD23C128000BL 128M-BIT 16M-WORD 16-BIT PD23C128000BL 44-pin 48-pin | |
48-PINContextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µ PD23C128040L 128M-BIT MASK-PROGRAMMABLE ROM 16M-WORD BY 8-BIT BYTE MODE / 8M-WORD BY 16-BIT (WORD MODE) PAGE ACCESS MODE Description The µPD23C128040L is a 134,217,728 bits mask-programmable ROM. The word organization is selectable (BYTE |
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PD23C128040L 128M-BIT 16M-WORD 16-BIT PD23C128040L 48-pin | |
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Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid |
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48-PINContextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid |
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Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid |
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Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µ PD23C128040AL 128M-BIT MASK-PROGRAMMABLE ROM 16M-WORD BY 8-BIT BYTE MODE / 8M-WORD BY 16-BIT (WORD MODE) PAGE ACCESS MODE Description The µPD23C128040AL is a 134,217,728 bits mask-programmable ROM. The word organization is selectable (BYTE |
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PD23C128040AL 128M-BIT 16M-WORD 16-BIT PD23C128040AL 48-pin | |
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µ PD23C128040L 128M-BIT MASK-PROGRAMMABLE ROM 16M-WORD BY 8-BIT BYTE MODE / 8M-WORD BY 16-BIT (WORD MODE) PAGE ACCESS MODE Description The µPD23C128040L is a 134,217,728 bits mask-programmable ROM. The word organization is selectable (BYTE |
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PD23C128040L 128M-BIT 16M-WORD 16-BIT PD23C128040L 48-pin | |
Contextual Info: OKI Semiconductor MR27V12852L 8M–Word x 16–Bit or 16M–Word × 8–Bit Page mode FEDR27V12852L-02-01 Issue Date: May 10, 2006 P2ROM FEATURES •8,388,608-word × 16-bit/16,777,216-word × 8-bit electrically switchable configuration · Page size of 8-word x 16-Bit or 16-word x 8-Bit |
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MR27V12852L FEDR27V12852L-02-01 608-word 16-bit/16 216-word 16-Bit 16-word MR27V12852L-xxxTA 56-pin 56-P-1420-0 | |
48-PINContextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µ PD23C128000AL 128M-BIT MASK-PROGRAMMABLE ROM 16M-WORD BY 8-BIT BYTE MODE / 8M-WORD BY 16-BIT (WORD MODE) Description The µPD23C128000AL is a 134,217,728 bits mask-programmable ROM. The word organization is selectable (BYTE |
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PD23C128000AL 128M-BIT 16M-WORD 16-BIT PD23C128000AL 48-pin | |
48-PINContextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µ PD23C128000L 128M-BIT MASK-PROGRAMMABLE ROM 16M-WORD BY 8-BIT BYTE MODE / 8M-WORD BY 16-BIT (WORD MODE) Description The µPD23C128000L is a 134,217,728 bits mask-programmable ROM. The word organization is selectable (BYTE |
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PD23C128000L 128M-BIT 16M-WORD 16-BIT PD23C128000L 48-pin | |
MR27V12800J-XXXTY
Abstract: MR27V12800J
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FEDR27V12800J-02-05 MR27V12800J 608-word 16-bit/16 216-word MR27V12800J-xxxTN) MR27V12800J-xxxTNE) MR27V12800J-xxxTN, MR27V12800J-xxxTNE 48-pin MR27V12800J-XXXTY MR27V12800J | |
MR27V12852L
Abstract: 56TSOP MR27V12852
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FEDR27V12852L-002-01 MR27V12852L 608-word 16-bit/16 216-word 16-Bit 16-word MR27V12852L-xxxTA 56-pin 56-P-1420-0 MR27V12852L 56TSOP MR27V12852 |