A210701E Search Results

LM7805

Abstract: H-30265-2 lm 2094
Contextual Info: A210701E Thermally-Enhanced High Power RF LDMOS FET 70 W, 2110 – 2170 MHz Description The A210701E is a thermally-enhanced, 70-watt, internallymatched GOLDMOS FET intended for WCDMA applications. It is characaterized for single- and two-carrier WCDMA operation from

Contextual Info: A210701E PTFA210701F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 70 W, 2110 – 2170 MHz Description The A210701E and PTFA210701F are 70-watt LDMOS FETs designed for single- and dual-carrier WCDMA power amplifier

PTFA210701E

Abstract: BCP56 LM7805 PTFA210701F RO4350 elna 50v lm 2094
Contextual Info: A210701E PTFA210701F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 70 W, 2110 – 2170 MHz Description The A210701E and PTFA210701F are 70-watt LDMOS FETs designed for single- and dual-carrier WCDMA power amplifier

Contextual Info: A210701E PTFA210701F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 70 W, 2110 – 2170 MHz Description 25 IM3 -45 20 tin ACPR -50 15 -55 -60 30 32 34 36 38 40 42 t uc • Broadband internal matching • Typical two-carrier WCDMA performance at

a210701e

Abstract: PTFA210701E 1K capacitor lm 2094 BCP56 LM7805 PTFA210701F RO4350
Contextual Info: A210701E PTFA210701F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 70 W, 2110 – 2170 MHz Description The A210701E and PTFA210701F are 70-watt LDMOS FETs designed for single- and dual-carrier WCDMA power amplifier

elna 50v

Abstract: PTFA210701E PTFA210701F RO4350 BCP56 LM7805 resistor 51k
Contextual Info: A210701E Thermally-Enhanced High Power RF LDMOS FET 70 W, 2110 – 2170 MHz Description The A210701E is a thermally-enhanced, 70-watt, internallymatched GOLDMOS FET intended for WCDMA applications. It is characaterized for single- and two-carrier WCDMA operation from