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    Gems Sensors & Controls

    Gems Sensors & Controls ULS200SA1YW0000

    3R10C4 Conductivity Probe Series 3R-3T |Gems Sensors ULS200SA1YW0000
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    Newark ULS200SA1YW0000 Bulk 1
    • 1 $285.78
    • 10 $265.37
    • 100 $235.53
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    RS ULS200SA1YW0000 Bulk 2 5 Weeks 1
    • 1 $182.70
    • 10 $166.25
    • 100 $160.77
    • 1000 $160.77
    • 10000 $160.77
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    Gems Sensors & Controls ULS200BA1YW0000

    3Z1A-100 Suspension Wire Series 3Z |Gems Sensors ULS200BA1YW0000
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    Newark ULS200BA1YW0000 Bulk 1
    • 1 $263.21
    • 10 $244.41
    • 100 $216.93
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    RS ULS200BA1YW0000 Bulk 1 5 Weeks 1
    • 1 $162.50
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    A1YW Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Evaluation board

    Abstract: R2C marking MARKING R2D SOT23 Marking R2E marking aac sot23-5 EP3001 GRM31CR70J106KA01L GRM31CR71A475KA01L LQH43CN2R2M03L R2E SOT23
    Contextual Info: EP3001 Evaluation Board Manual DESCRIPTION This manual aims to illustrate how to use the EP3001 Evaluation Board “EP3001 EVB” . The EP3001 EVB is a constant-frequency buck regulator, using the EP3001, 1.5MHz, 600mA Synchronous Step-down Converter. The EP3001 EVB is available for input voltage range from 2.5V to


    Original     		EP3001 EP3001, 600mA 600mA 800mA Evaluation board R2C marking MARKING R2D SOT23 Marking R2E marking aac sot23-5 GRM31CR70J106KA01L GRM31CR71A475KA01L LQH43CN2R2M03L R2E SOT23 PDF

    SPP3401

    Abstract: SPP3401S23RG
    Contextual Info: SPP3401 P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP3401 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.


    Original     		SPP3401 SPP3401 -30V/-4 -30V/-3 SPP3401S23RG PDF

    SPP3401

    Abstract: MOSFET SPP3401S23RG a1yw SPP3401S23RGB
    Contextual Info: SPP3401 P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP3401 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.


    Original     		SPP3401 SPP3401 -30V/-4 -30V/-3 MOSFET SPP3401S23RG a1yw SPP3401S23RGB PDF

    SPP3401B

    Abstract: MOSFET
    Contextual Info: SPP3401B P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP3401B is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.


    Original     		SPP3401B SPP3401B -30V/-4 -30V/-3 MOSFET PDF