A1T 03 Search Results

iso 10373-7 loop

Abstract: cyclic redundancy check LRI512 ISO15693 1 out of 4 inventory request AI06668 iso 10373-7 ISO15693 LRI512 ISO10373-7 7816-6 AM1
Contextual Info: LRI512 Memory TAG IC 512 bit High Endurance EEPROM 13.56MHz, ISO 15693 Standard Compliant with E.A.S. FEATURES SUMMARY • ISO15693 Standard: Fully Compliant ■ 13.56 MHz ±7 kHz Carrier Frequency ■ To the LRI512: 10% or 100% ASK modulation using: – 1/4 pulse position coding 26 kbit/s

Contextual Info: ー ※ T111ax T H I R DA N G L EP R O J EC iI O N ト ! 』 CODE i÷TEEJ 1 M 1 i I LJ CAPACITANCE1D F 中 ※L 103JM3 0.01 E※T (123) f I (153) 1 1 I 1 1J183JM3 1J223JM3 O . 018 ( 183) f I 1 1 f I O . 022 (223) 1 1 1 1 f I U 1J273JM3 O . 027 ( 273) f I

Contextual Info: MD-173 High Stability Coefficient Oscillator I C interface Oven Controlled Crystal Oscillator 2 MD-173 The MD-173 is a Vectron “Coefficient Oscillator” CCXO that contains a high-stability ovenized crystal oscillator and an I2C interface that communicates with temperature and current sensors, and an onboard EEPROM. The interface enables the customer

Contextual Info: MD-403 I2C InterfaceOven Controlled Crystal Oscillator MD-403 The MD-403 is a Vectron module that contains a medium size ovenized crystal oscillator and an I2C interface that interfaces with an onboard eeprom and temperature sensors. The interface enables the customer to improve upon the already

811CE

Abstract: J300 J400 P300 P4C1024
Contextual Info: P4C1024 HIGH SPEED 128K x 8 CMOS STATIC RAM FEATURES • High Speed Equal Access and Cycle Times — 15/17/20/25/35 ns (Commercial) — 20/25/35/45 ns (Industrial) ■ Single 5 Volts+10% Power Supply ■ Easy Memory Expansion Using CE, CE2 and OE Inputs

Contextual Info: ゐ 同 一- T H I R DA N G L EP R O J E C T I O NI CAPACITANCE 1 D IMENS IONS ITEM CODE ※ ※ ※ ヰ I;>i( L I;>i( T I ; > i ( H F 1/，'/~ ECQV 1103JM310.01 (103)17.513.217.0 l1123JM310.012 (123)1 1 1 1153JM3 10.015 (153) 1 1 1183JM3 1O . 018 ( 183) 1

smd code A1t

Abstract: A1t smd smd diode A1T SMD a1T Transistor A1T SMD diode DIODE smd marking a1t 22 a1t diode DIODE smd marking A1p A1t SOT23 DIODE smd marking A1t
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BAW56 High-speed double diode Product specification Supersedes data of 1996 Sep 17 1999 May 11 Philips Semiconductors Product specification High-speed double diode BAW56 FEATURES DESCRIPTION • Small plastic SMD package

dg506abr

Abstract: 5202 GE SL4 diode DS5B
Contextual Info: SSSSS DG506A/507A 16-Channel and Dual 8-Channel CMOS Analog Multiplexers FEATURES BENEFITS APPLICATIONS • TTL & CMOS Direct Control Over Military Temperature Range • Easily Interfaced • Reduced Power Consumption • Low Power 30 mW typ. • Break-Before-Make Switching

Contextual Info: FUJITSU MICROELECTRONICS 3 7 4 ci7bH Q 0 0 Ö 3 7 7 23E D EC fâ63 8 & B fllS BIPOLAR; RANDO ACGESSiriÄEMÖEf F U JIT S U 4 M B M 1 0 0 4 8 4 A - 1 0 'T >/ l l -> -> r\ 0 August 1988 I'Hb'Cii “O S Editlon 20 16384-BIT BIPPOLAR ECL RANDOM ACCESS M EM O RY

LM706

Abstract: Q06h
Contextual Info: O r J e - d É rtüTib^r: E l f î O S S A F NMOSLSä No. 9036 A L M 7 0 Q6 , 7 Q Q 6 H S A V V ü D u a l 1JL L F r e q u e n c y S y n th e s iz e r C irc u it Ovflrviev I he LMT-DÖ6, 7 0 0 ffll is a F L U FVe^iitnc.y S y n th e s is e r circu it, for use lo c o rd le s s telephones-. I , ¡Jicorpor iü e 1; se p a ra te p ro g ra m n M b ie c1SvU1h>i*s, ph ase co m p a ra to rs * n d dui>l-g 4AÌn clm rg e p u m p s fü r th e Lrnrhamit,

Contextual Info: GEC PLESSEY SEMICONDS 4bE T> m 37bfl522 OOlb'ib? 3 • PLSB GEC PLESSEY MARCH 1992 PRELIMINARY INFORMATION ¡s e m i c o n d u c t o r s ! OS3234 1.1 P10C68 INDUSTRIAL GRADE CMOS/SNOS nvSRAM HIGH PERFORMANCE 8 K x 8 NON-VOLATILE STATIC RAM The P10C68 is a fast static RAM 35 and 45 ns with a

L120A

Contextual Info: AMD a Am7943 Subscriber Line Interface Circuit DISTINCTIVE CHARACTERISTICS • Program mable constant-current feed ■ - 1 9 V to - 5 8 V battery operation ■ Current gain = 200 ■ ■ Program mable loop-detect threshold Two-wire im pedance set by single external

MAE A1470

Contextual Info: ADV MICRO MEMORY 3ÖE 0 • Ü5S7S2Ö ODSTMSÖ 0 ■ A MD 4 '-* 4 6 -1 2 -2 ? Advanced Micro Devices Am27C256 32,768 X 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS ■ Fast access tlme-S5 ns ■ JEDEC-approved pinout ■ Low power consumption: -100 nA maximum standby current

philips diode PH 33D

Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
Contextual Info: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)

AM2964B

Contextual Info: Am a 2964 B Advanced Micro Devices Dynamic Memory Controller DISTINCTIVE CHARACTERISTICS • • • Dynamic Memory Controller for 16K and 64K MOS dynamic RAMs 8 -Bit Refresh Counter for refresh address generation, has clear input and terminal count output

k0312

Abstract: yb06 YB04 YA16 apl 117 yb07 y802 AWa3 74N10 V18-Y3S
Contextual Info: Am29C334 CMOS Four-Port Dual-Access Register File PRELIMINARY • 64 x 18 Bit W ide R egister File The Am29C334 is a 64 x 18-bit, dual-access RAM with tw o read ports and two write ports. Pipelined Data Path The Am 29C334 can be configured to support either a

TK 2837

Abstract: journal op-amp 741 long range jammer gsm qpsk modulation experiment discussion tv jammer cir 2272 tv jammer data sheet Motorola Microwave power Transistor electromagnetic pulse generator jammer MZP RELAY
Contextual Info: PLL Performance, Simulation, and Design 4th Edition Dean Banerjee “Make Everything as Simple as Possible, but not Simpler.” Albert Einstein To my wife, Nancy, and my children, Caleb, Olivia, and Anabelle Preface I first became familiar with PLLs by working for National Semiconductor as

A1T TRANSISTOR

Contextual Info: IMDCIC MX29F81OO 8M -BITI1 M x 8 /5 1 2K x 1 6 CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • • • • • 5V +10% write and erase JEDEC-standard EEPROM commands Minimum 1,000/10,000 write/erase cycles Fast access time: 100/120/150ns Sector erase architecture

NON LINEAR Quantizer

Abstract: g723 ADPCM algorithm ez 948 PCM sampling q encoder SP 1191 bc 339 dp 502 t K-two MAS 10 RCD RCA 467
Contextual Info: The Implementation of G.726 Adaptive Differential Pulse Code Modulation ADPCM on TMS320C54x DSP Literature Number: BPRA053 Texas Instruments Europe July 1997 IMPORTANT NOTICE Texas Instruments (TI) reserves the right to make changes to its products or to discontinue

NON LINEAR Quantizer

Abstract: Implementation of G.726 on TMS320C54x 15S4 bpra C541 TLC320AC01 VOCODER TMS320C54x program to multiply two q15 numbers TMS320 Family volume 1 BPRA053
Contextual Info: The Implementation of G.726 Adaptive Differential Pulse Code Modulation ADPCM on TMS320C54x DSP Literature Number: BPRA053 Texas Instruments Europe July 1997 IMPORTANT NOTICE Texas Instruments (TI) reserves the right to make changes to its products or to discontinue

Contextual Info: Advance Data Sheet October 1999 m icro ele ctro n ic s group Lucent Technologies Bell Labs Innovations ORCA ORT4622 Field-Programmable System Chip FPSC Four-Channel x 622 Mbits/s Backplane Transceiver Introduction Lucent Technologies Microelectronics Group has

Contextual Info: PRELIMINARY PRODUCT INFORMATION MOS INTEGRATED CIRCUIT ¿¿PD78P4026 16-/8-BIT SIN G LE-C H IP M IC R O C O M PU TER The pPD78P4026 is a 16-/8-bit single-chip microcomputer, one-time PROM or EPROM version of the ¿¿PD784025 and ¿iPD784026. Since the program can be w ritten by the user, the /¿PD78P4026 is suitable for

Contextual Info: m i c ro e I e c t ro n i c s g r o u p Data Sheet February 1998 Lucent Technologies Bell Labs Innovations T7237 ISDN U-lnterface Transceiver Features Description • U-interface for ISDN basic rate 2B+D systems — Serial microprocessor and time-division multi­

Contextual Info: ^ ATflCT =-= M I S I = E F Microelectronics Advance Data Sheet April 1996 T7237 ISDN U-lnterface Transceiver Features Description • U-interface for ISDN basic rate 2B+D systems — Serial microprocessor and time-division multi­ plexed (TDM) bus interfaces