A1R MARKING Search Results

a4504

Abstract: IC a4504
Contextual Info: MIL-M-38510/326B 24 Ju ly 1984 sur e n a u iir e -MIL-M-38510/326A USAF 27 March 1981 MILITARY SPECIFICATION MICROCIRCUITS, DIGITAL, LOW-POWER SCHOTTKY TTL, DEMULTIPLEXERS, MONOLITHIC SILICON This sp e cifica tio n i s approved fo r use by the Department of the A1r

Contextual Info: MODELS IM-2A-ER and IM-2B-ER Inductors Military/Established Reliability MIL-C-39010 Qualified, M39010/08/09 FEATURES • MIL-C-39010/08 Phenolic Core • MIL-C-39010/09 (Iron Core) ELECTRICAL SPECIFICATIONS DENSITY SPECIFICATIONS Inductance Tolerance: ± 5%, ± 10%.

Contextual Info: MODEL IMS-5A-ER and IMS-5B-ER Inductors Military/Established Reliability, MIL-C-39010 Qualified M39010/01/02, Magnetic Shield FEATURES • MIL-C-39010/01 phenolic core - iron sleeve • MIL-C-39010/02 (iron core - iron sleeve) ELECTRICAL SPECIFICATIONS DENSITY SPECIFICATIONS

Contextual Info: Models IM-2A-ER and IM-2B-ER Vishay Dale VISHAY Inductors Military/Established Reliability MIL-C-39010 Qualified, M39010/08/09 FEATURES • MIL-C-39010/08 Phenolic Core . • MIL-C-39010/09 (Iron Core). ELECTRICAL SPECIFICATIONS DENSITY SPECIFICATIONS Inductance Tolerance: ± 5%, + 10%.

5670w

Abstract: sm4500
Contextual Info: MIL-E-1/5J 18 February 1981 SUPERSEDING MIL-E-1/5H 10 March 1969 MILITARY SPECIFICATION SHEET ELECTRON TUBE, RECEIVING TYPE 5670W ^ This s p e d f l c a t l o a 1s approved for use by all Depart­ ments and Agencies of the Department of Defense. The complete requirements for procuring the electron tube described herein

Contextual Info: MODELS IM-2A-ER and IM-2B-ER Inductors M ilitary/Established Reliability MIL-C-39010 Qualified, M 39010/08/09 FE A T U R E S MIL-C-39010/08 Phenolic Core MIL-C-39010/09 (Iron Core) ELE C T R IC A L S P E C IF IC A T IO N S D E N S IT Y S P E C IF IC A T IO N S

AR-27

Contextual Info: Models IMS-5A-ER and IMS-5B-ER VISHAY Vishay Dale Inductors Military/Established Reliability, M IL-C -39010 Qualified M 39010/01/02, Magnetic Shield FEATURES • MIL-C-39010/01 phenolic core - iron sleeve . • MIL-C-39010/02 (iron core - iron sleeve). ELECTRICAL SPECIFICATIONS

a1r8

Contextual Info: Models IMS-5A-ER and IMS-5B-ER VISHAY Vishay Dale Inductors Military/Established Reliability, M IL-C -39010 Qualified M 39010/01/02, Magnetic Shield FEATURES • MIL-C-39010/01 phenolic core - iron sleeve . • MIL-C-39010/02 (iron core - iron sleeve). ELECTRICAL SPECIFICATIONS

Contextual Info: AL5DS9xx9V Data Sheets -1M bit Dual-Port SRAM AL5DS9389V -64K x 18 bits, 3.3V, Synchronous AL5DS9289V -64K x 16 bits, 3.3V, Synchronous AL5DS9199V -128K x 9 bits, 3.3V, Synchronous AL5DS9099V -128K x 8 bits, 3.3V, Synchronous Preliminary AL5DS9389V/9289V/9199V/9099V

Contextual Info: Models IMS-5A-ER and IMS-5B-ER VISHAY Vishay Dale Inductors Military/Established Reliability, MIL-C-39010 Qualified M39010/01/02, Magnetic Shield FEATURES • MIL-C-39010/01 phenolic core - iron sleeve . • MIL-C-39010/02 (iron core - iron sleeve). ELECTRICAL SPECIFICATIONS

DSA4001

Abstract: a1r marking Marking a1s
Contextual Info: Tentative DSA4001 Total pages page DSA4001 Silicon PNP epitaxial planar type For general amplifier Marking Symbol : A1 Package Code : NS-B1-B-B Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)

ftr 02

Abstract: F.TR.02 19 IDT BH package marking marking a7r
Contextual Info: AL5DS9xx9V Data Sheets 3.3V Synchronous Dual-Port SRAM AL5DS9349V/59V/69V/79V/89V 4K/8K/16K/32K/64K x 18 AL5DS9269V/79V/89V 16K/32K/64K x 16 AL5DS9149V/59V/69V/79V/89V/99V 4K/8K/16K/32K/64K/128K x 9 AL5DS9069V/79V/89V/99V 16K/32K/64K/128K x 8 Preliminary AL5DS9xx9V

C11AH3r9

Abstract: C17CF c17c C11CF3R C11AH C11CF1R CDR11 atc MIL-C-55681 cdr14 C11CF4R7
Contextual Info: Dimensions Case Sizes INCHES Termi­ nation Code L Temperature Co­ efficients from —5 5 °C to + 1 2 5 °C T Max Y S • °< S !o .055^.010 .050 C11 T 055- S o 055- S o .050 C17 S .110±.015 .100 ,015±.010 C17 T ■1 1 0 - S o M0-S°5 .100 ,015±.010

Contextual Info: AL5DS9xx9V Data Sheets -1M bit Dual-Port SRAM AL5DS9389V -64K x 18 bits, 3.3V, Synchronous AL5DS9289V -64K x 16 bits, 3.3V, Synchronous AL5DS9199V -128K x 9 bits, 3.3V, Synchronous AL5DS9099V -128K x 8 bits, 3.3V, Synchronous Preliminary AL5DS9389V/9289V/9199V/9099V

40MHZ

Abstract: A15L A15R IDT709089 IDT709089S MARKING A14L dual port ram 64kx8
Contextual Info: HIGH-SPEED 64K x 8 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM ADVANCED IDT709089S/L Integrated Device Technology, Inc. FEATURES: • True Dual-Ported memory cells which allow simultaneous reads of the same memory location • High-speed access — Commercial: 12/15ns max.

64Kx8 dual-port CMOS RAM

Abstract: marking a0l 64Kx8 CMOS RAM MARKING A1L 64Kx8 A15L A15R IDT709089 IDT709089S marking A3L
Contextual Info: HIGH-SPEED 64K x 8 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM ADVANCED IDT709089S/L Integrated Device Technology, Inc. FEATURES: • True Dual-Ported memory cells which allow simultaneous reads of the same memory location • High-speed access — Commercial: 15/20ns max.

Marking GVT

Abstract: 8-8NS GALVANTECH marking A3L
Contextual Info: ADVANCE INFORMATION GVT8164/32/16C16/18 GVT81128/64/32C8/9 GALVANTECH, INC. SYNCHRONOUS DUAL-PORT BURST SRAM 64K/32K/16K x 16/18 128K/64K/32K x 8/9 +3.3V SUPPLY, BURST COUNTER FEATURES GNERAL DESCRIPTION • The GVT8116C16/18, GVT8132C16/18, and GVT8164C16/18 are high speed synchronous 16K, 32K and

a13l

Abstract: PN100-1 A15L A15R marking a0l 64Kx8 dual-port CMOS RAM
Contextual Info: ADVANCED IDT70908S/L HIGH-SPEED 64K x 8 SYNCHRONOUS DUAL-PORT STATIC RAM Integrated Device Technology, Inc. FEATURES: • Full synchronous operation from either port - 5ns setup to clock, 1ns hold on all Control, data, and address inputs - Data input, address, and control registers

MARKING A14L

Abstract: A14L IDT709089S IDT709079
Contextual Info: HIGH-SPEED 32K x 8 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM ADVANCED IDT709079S/L Integrated Device Technology, Inc. FEATURES: • TTL- compatible, single 5V ±10% power supply • Full synchronous operation from either port - 5ns setup to clock,1ns hold on all Control, data, and

3VR10

Abstract: AL5DS9289V AL5DS9389V marking a0l
Contextual Info: AL5DS9xx9V AL5DS9xx9V Data Sheets 3.3V Synchronous Dual-Port SRAM AL5DS9349V/59V/69V/79V 4K/8K/16K/32K x 18 bits AL5DS9269/79V 16K/32K x 16 bits AL5DS9149/59/69/79/89V 4K/8K/16K/32K/64K x 9 bits AL5DS9069/79/89V 16K/32K/64K x 8 bits Preliminary 2002-Copyright by AverLogic Technologies, Corp.

FTL 8-1

Contextual Info: ADVANCE INFORMATION GVT8664/32/16C16/18 GVT86128/64/32C8/9 GALVANTECH, INC. SYNCHRONOUS DUAL-PORT BURST SRAM 64K/32K/16K x 16/18 128K/64K/32K x 8/9 +5V SUPPLY, BURST COUNTER FEATURES GNERAL DESCRIPTION • The GVT8616C16/18, GVT8632C16/18, and GVT8664C16/18 are high speed synchronous 16K, 32K and

A14L

Abstract: MARKING A14L MARKING A1L a7l transistor marking a7r NC MARKING PN100 PN100-1 40MHZ IDT709079
Contextual Info: Integrated Device Technology, Inc. HIGH-SPEED 32K x 8 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM FEATURES: • True Dual-Ported memory cells which allow simultaneous reads of the same memory location • High-speed access — Commercial: 12/15ns max. • Low-power operation

GALVANTECH

Contextual Info: ADVANCE INFORMATION GVT7464/32/16V16/18 GVT74128/64/32V8/9 GALVANTECH, INC. SYNCHRONOUS DUAL-PORT BURST SRAM 64K/32K/16K x 16/18 128K/64K/32K x 8/9 +3.3V SUPPLY, BURST COUNTER FEATURES GNERAL DESCRIPTION • The GVT7416V16/18, GVT7432V16/18, and GVT7464V16/18 are high speed synchronous 16K, 32K and

Contextual Info: ADVANCE INFORMATION GVT7464/32/16C16/18 GVT74128/64/32C8/9 GALVANTECH, INC. SYNCHRONOUS DUAL-PORT BURST SRAM 64K/32K/16K x 16/18 128K/64K/32K x 8/9 +5V SUPPLY, BURST COUNTER FEATURES GNERAL DESCRIPTION • The GVT7416C16/18, GVT7432C16/18, and GVT7464C16/18 are high speed synchronous 16K, 32K and