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    A1B 80 Search Results

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    Electrocube Inc 232A1B805K

    8.0 f 10% 100 Vdc, Metallized Po
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    DigiKey 232A1B805K Bulk 5
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    Microchip Technology Inc DSC6001AA1B-800K000

    OSCILLATOR MEMS SMD
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    DigiKey DSC6001AA1B-800K000 1
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    Avnet Americas DSC6001AA1B-800K000 Tube 800
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    Microchip Technology Inc DSC6001AA1B-800K000 Tube
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    Master Electronics DSC6001AA1B-800K000
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    Microchip Technology Inc DSC6001AA1B-800K000T

    OSCILLATOR MEMS SMD
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    DigiKey DSC6001AA1B-800K000T 1
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    Avnet Americas DSC6001AA1B-800K000T Reel 1,000
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    Microchip Technology Inc DSC6001AA1B-800K000T Reel
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    Master Electronics DSC6001AA1B-800K000T
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    Synaptics Incorporated SL1680A1-BYKXSYY-T000-T

    Processors - Application Specialized 4CxA73 2.1GHz, 7.9+ TOPS, HDMI disabled, Cons. Grade
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    Mouser Electronics SL1680A1-BYKXSYY-T000-T 900
    • 1 $34.01
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    Micron Technology Inc MTFDDAV480TGA-1BC1ZABYY

    Solid State Drives - SSD 5400 576GByte M.2 22x80x3.8
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    Mouser Electronics MTFDDAV480TGA-1BC1ZABYY 611
    • 1 $223.27
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    A1B 80 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    aegis A2a

    Abstract: aegis A1B A2B 450 DO-205AB aegis A1A aegis a2b aegis DSASW0010065
    Contextual Info: AEGIS SEMICONDUTORES LTDA. A1A:450.XX VOLTAGE RATINGS Part Number VRRM , VR V Max. rep. peak reverse voltage O This datasheet applies to: VRSM , VR (V) Max. nonrep. peak reverse voltage Metric thread: A1A:450.XX, A1B:450.XX O TJ = 0 to 200 C TJ = -40 to 0OC


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    DO-205AB aegis A2a aegis A1B A2B 450 DO-205AB aegis A1A aegis a2b aegis DSASW0010065 PDF

    IEC793

    Contextual Info: Alcatel Multimode Fiber 50/125 Ref. A1b Process The fibers are manufactured using the APVD process. This is a deposition of Silicium dioxide and germanium dioxide inside a silica tube. The Alcatel APVD has been specifically developed for a mass production of fibers with a high


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    150ns IEC793 PDF

    aegis A1B

    Abstract: aegis A1A aegis A2a aegis a2b aegis A1B 80 DO-205AA aegis A1A aegis 600/diode aegis a2b
    Contextual Info: AEGIS SEMICONDUTORES LTDA. A1A:100.XX VOLTAGE RATINGS Part Number VRRM , VR V rep. peak reverse voltage This datasheet applies to: Max. VRSM , VR (V) Max. nonrep. peak reverse voltage O O Metric thread: A1A:100.XX, A1B:100.XX O TJ = 0 to 180 C TJ = -40 to 0 C


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    DO-205AA aegis A1B aegis A1A aegis A2a aegis a2b aegis A1B 80 DO-205AA aegis A1A aegis 600/diode aegis a2b PDF

    dallas ds1280

    Abstract: A12B A18B a17b DS1280 A10B A11B A13B DS1280FP-80
    Contextual Info: DS1280 DS1280 3-Wire to Bytewide Converter Chip PIN ASSIGNMENT • Adapts JEDEC bytewide memory A2R A1B A1R A0B A0R RST CLK GND VCC DQE CEB CER WEB WER OEB OER FEATURES to a 3-wire serial port • Supports 512K bytes of memory • 68-pin version provides arbitration mechanisms for


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    DS1280 68-pin 80-pin DS1280FP-XX 44-pin dallas ds1280 A12B A18B a17b DS1280 A10B A11B A13B DS1280FP-80 PDF

    EABC80

    Abstract: ca10 HABC80 EABC 80
    Contextual Info: Dreifachdipd« - Triode für AM-PM-Demodulmtion und KT-YerStärkung a1B HABC80 *n <o o “ tc <o kBC,sAB 1 m ax. 21 Gewicht ca. 10 g 1»Heizerwerte für Serienspeisun# :-feiz Spannung Heizstrom Oxydkatode, indirekt geheizt V-h h ca. 19*0 0,15 y A Die übrigen Daten und Kurven sind denen der Type EABC 80 gleich«


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    HABC80 EABC80 ca10 HABC80 EABC 80 PDF

    Neon Lamp A9A

    Abstract: Neon Lamp 2ml Neon Lamp a2b B6A NE-21 715AS15 NE-2D ne51hr 56PR200 55-112R-0 6S6DC-120V
    Contextual Info: CML Innovative Technologies MANU 067 CODE FIG. 1 FIG. 2 FIG. 4 ELECTRICAL INDUSTRY LAMPS FIG. 21 FIG. 22 FIG. 2 NEON LAMPS Cat. No. B6A NE-21 2ML(NE-38S) A1A(NE-2) A1B A1C A2A A2B(NE-2V) A9A(NE-2E) C2A(NE-2H) C2A-T(NE-2HT) A1G A1H C7A(NE-2D) C9A(NE-2J) *For 220-250 Volts


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    NE-21) NE-38S) Neon Lamp A9A Neon Lamp 2ml Neon Lamp a2b B6A NE-21 715AS15 NE-2D ne51hr 56PR200 55-112R-0 6S6DC-120V PDF

    Contextual Info: 13 12 10 2.35 ADD FOR ,1.30ENDW ALU 1.78- 2.65 PIN A1a -PIN A1b O -1.30 O I o I O O O O o I I 32.2 2 5 .9 0 1 O O O O o O O H (ADD FOR END W ALL I-R O W A I-R O W R I-R O W C I-R O W n I-R O W F I-R O W F I-R O W G I-R O W H I I- R O W


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    30ENDW SD-76035-001 PDF

    G530T

    Contextual Info: •HYUNDAI H Y 6 7 1 6 1 1 0 / 1 Ì 1 64K X 16 Bit SYNCHRONOUS CMOS SRAM PRELIMINARY DESCRIPTION This device integrates high-speed 64Kx16 SRAM core, address registers, data input registers, a 2-bit burst address counter and Non-pipelined output. All synchronous inputs pass through registers controlled by a


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    64Kx16 486/Pentium 15ns/20ns/25ns 67MHz Mb75Qflfl GG0b313 10H07-11-MAY95 HY6716110/111 4b750flfl 1DH07-11-MAY95 G530T PDF

    Contextual Info: HY67V16100/101 »HYUNDAI 64K x 16 Bit SYNCHRONOUS CMOS SRAM PRELIMINARY DESCRIPTION This device integrates high-speed 64Kx16 SRAM core, address registers, data input registers, a 2-bit burst address counter and pipelined output. All synchronous inputs pass through registers controlled by a positive-edge


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    HY67V16100/101 64Kx16 486/Pentium 7ns/12ns/17ns 67MHz 486/Pentium 1DH06-11-MAY9S HY67V16100/101 1DH06-11-MAY95 PDF

    Contextual Info: H Y 6 7 V 1 6 1 1 0 /1 1 1 HYUNDAI 64K x 16 Bit SYNCHRONOUS CMOS SRAM PRELIM INARY DESCRIPTION This device integrates high-speed 64Kx16 SRAM core, address registers, data input registers, a 2-bit burst address counter and Non-pipelined output. All synchronous inputs pass through registers controlled by a


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    64Kx16 486/Pentium 20ns/25ns/30ns 50MHz 1DH03-11-MAY95 HY67V16110/111 4b750Ã 1DH08-11-MAY95 HY67V16110C PDF

    Contextual Info: •HYUNDAI H Y 6 7 V 1 8 1 0 0 /1 0 1 64K X 18 Bit SYNCHRONOUS CMOS SRAM PRELIMINARY DESCRIPTION This device integrates high-speed 64K x18 SRAM core, address registers, data input registers, a 2-bit burst ad­ dress counter and pipelined output. All synchronous inputs pass through registers controlled by a positiveedge triggered clock K .


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    486/Pentium 7ns/12ns/17ns 67MHz 486/Pent 00DbSS3 1DH02-22-MAY95 HY67V18100/101 HY67V18100C PDF

    Au1000

    Abstract: Alchemy Semiconductor au1000 ALCHEMY SEMICONDUCTOR be0b 416SP a/S3C9004/P9004/C9014/Reset Software for Alchemy Au1000 Processor
    Contextual Info: APPLICATION NOTE EPSON GRAPHICS INTERFACES AND THE AU1000 Matt Brandt Epson Graphics Interfaces and the Au1000 REVISION NO.: 1.0 www.alchemysemi.com Page 1 of 7 Introduction The Epson graphics controller interface on the Au1000 is natively a 16 bit interface. If a 32 bit write is done to


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    AU1000 Au1000 Alchemy Semiconductor au1000 ALCHEMY SEMICONDUCTOR be0b 416SP a/S3C9004/P9004/C9014/Reset Software for Alchemy Au1000 Processor PDF

    Non-Linear Circuits Handbook Analog Devices

    Abstract: inverter linear application handbook national semiconductor linear application handbook national semiconductor CO Q81 Ultrasonic Transducer application notes fuel tank LM394 AN-311 Vishay Q81 LM331
    Contextual Info: National Semiconductor Application Note 311 April 1991 A number of instrumentation applications can benefit from the use of logarithmic or exponential signal processing techniques. The design and use of logarithmic/exponential circuits are often associated with involved temperature compensation requirements and difficult to stabilize feedback


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    PDF

    SY100S370

    Abstract: transistor z2b Z4 13 F100K SY100S370FC SY100S370JC SY100S370JCTR Z745
    Contextual Info: UNIVERSAL DEMULTIPLEXER/ DECODER FEATURES SY100S370 DESCRIPTION • Max. propagation delay of 1200ps ■ IEE min. of –92mA ■ Industry standard 100K ECL levels ■ Extended supply voltage option: VEE = –4.2V to –5.5V ■ Voltage and temperature compensation for improved


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    SY100S370 1200ps F100K 24-pin 28-pin SY100S370 F24-1 SY100S370JC J28-1 SY100S370JCTR transistor z2b Z4 13 F100K SY100S370FC SY100S370JC SY100S370JCTR Z745 PDF

    realization of Passive filters

    Abstract: 1kHz-20kHz PCM1700 OPA2604 681k 100pf Passive Low-pass Filter Design Method OPA627 PCM1750 lowpass filter 20khz theory op amp audio
    Contextual Info: APPLICATION BULLETIN Mailing Address: PO Box 11400 • Tucson, AZ 85734 • Street Address: 6730 S. Tucson Blvd. • Tucson, AZ 85706 Tel: 602 746-1111 • Twx: 910-952-111 • Telex: 066-6491 • FAX (602) 889-1510 • Immediate Product Info: (800) 548-6132


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    transistor z2b

    Abstract: 1690 MARKING E2B marking Z0B F100K SY100S370 SY100S370FC SY100S370FCTR SY100S370JC Marking Z7
    Contextual Info: UNIVERSAL DEMULTIPLEXER/ DECODER Micrel, Inc. FEATURES SY100S370 SY100S370 DESCRIPTION • Max. propagation delay of 1200ps ■ IEE min. of –92mA ■ Industry standard 100K ECL levels ■ Extended supply voltage option: VEE = –4.2V to –5.5V ■ Voltage and temperature compensation for improved


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    SY100S370 1200ps F100K 24-pin 28-pin SY100S370 M9999-032406 transistor z2b 1690 MARKING E2B marking Z0B F100K SY100S370FC SY100S370FCTR SY100S370JC Marking Z7 PDF

    Contextual Info: H Y 6 7 V 1 8 1 1 0 /1 1 1 64K X 18 Bit SYNCHRONOUS CMOS SRAM -HYUNDAI PRELIMINARY DESCRIPTION This device integrates high-speed 64K x18 SRAM core, address registers, data input registers, a 2-bit burst ad­ dress counter and Non-pipelined output. All synchronous inputs pass through registers controlled by a positiveedge triggered clock K .


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    486/Pentium 20ns/25ns/30ns 40MHz 00DbP77 1DH04-11-MAY95 HY67V18110/111 HY67V18110C HY67V18111C PDF

    interruptor de final de carrera

    Abstract: carrera final de carrera Lb591 CONDUIT A300 A600 EN60947-5-1 IEC60947-5-1 Q300
    Contextual Info: ISSUE 5 PK 80086 Installation Instructions for the Global Safety Limit Switch GSS Series Instrucciones de instalación para los interruptores de fin de carrera (serie GSS) Einbauanweisungen für den Sicherheits-Positionsschalter (Serie GSS) Instructions d’installation du fin de course standard de sécurité (série GSS)


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    Contextual Info: “H Y U N D A I H Y 6 7 1 6 1 0 0 /1 0 1 64K x 16 Bit SYNCHRONOUS CMOS SRAM P RELIM IN ARY DESCRIPTION This device integrates high-speed 64Kx16 SR A M core, address registers, data input registers, a 2-bit burst address counter and pipelined output. All synchronous inputs pass through registers controlled by a positive-edge


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    64Kx16 486/Pentium 6ns/9ns/12ns 75MHz 486/Pe 10H05-11-MAY95 HY6716100/101 1DH05-11-MAY95 HY6716100C PDF

    Contextual Info: UNIVERSAL DEMULTIPLEXER/ DECODER Micrel, Inc. FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ SY100S370 SY100S370 DESCRIPTION Max. propagation delay of 1200ps IEE min. of –92mA Industry standard 100K ECL levels Extended supply voltage option: VEE = –4.2V to –5.5V


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    SY100S370 1200ps F100K 28-pin SY100S370 M9999-042307 PDF

    100370PC

    Abstract: 100370QC 100370QI MO-047 MS-011 N24E V28A
    Contextual Info: Revised November 1999 100370 Low Power Universal Demultiplexer/Decoder General Description Features The 100370 universal demultiplexer/decoder functions as either a dual 1-of-4 decoder or as a single 1-of-8 decoder, depending on the signal applied to the Mode Control M


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    VHCT139A

    Contextual Info: MC74VHCT139A Product Preview Dual 2-to-4 Decoder/ Demultiplexer The MC74VHCT139A is an advanced high speed CMOS 2–to–4 decoder/ demultiplexer fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky


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    MC74VHCT139A MC74VHCT139A VHCT139A PDF

    ha 1555

    Abstract: F100K J24E DS100311
    Contextual Info: 100370 Low Power Universal Demultiplexer/Decoder General Description The 100370 universal demultiplexer/decoder functions as either a dual 1-of-4 decoder or as a single 1-of-8 decoder, depending on the signal applied to the Mode Control M input. In the dual mode, each half has a pair of active-LOW Enable


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    app959 ha 1555 F100K J24E DS100311 PDF

    100370PC

    Abstract: 100370QC 100370QI MO-047 N24E V28A
    Contextual Info: Revised August 2000 100370 Low Power Universal Demultiplexer/Decoder General Description Features The 100370 universal demultiplexer/decoder functions as either a dual 1-of-4 decoder or as a single 1-of-8 decoder, depending on the signal applied to the Mode Control M


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    PDF