A19-300 425 Search Results

BT412

Abstract: BB48 1334 A31 BH292 BK276 BK377 BL301
Contextual Info: CASE STYLES OUTLINE DIMENSIONS inch mm case no. B C D E F G H J K BB48 .50 12.70 .39 9.91 .225 5.72 .025 0.63 .07 1.78 .100 2.54 .250 6.35 .350 8.89 .06 1.52 .31 7.87 3.0 A1, E1 BG 291 BG 419 BH292 BJ293 BJ360 BJ398 BK276 . BK 343 BK377 BL301 BL372 BN333

PSD302

Abstract: PSD303 PSD311 waferscale psd3xx PSD301 PSD304R PSD311 PSD312 PSD313 PSD314R
Contextual Info: Programmable Peripheral PSD3XX Family Field-Programmable Microcontroller Peripheral Key Features ❏ Single Chip Programmable Peripheral for Microcontroller-based Applications ❏ Wide Operating Voltage Range — L-Versions: 3.0 to 5.5 volts — Others: 4.5 to 5.5 volts

2Mbit EPROM

Abstract: 80C196K
Contextual Info: Programmable Peripheral PSD3XX Family Field-Programmable Microcontroller Peripheral Key Features □ Single Chip Programmable Peripheral for Microcontroller-based Applications □ Wide Operating Voltage Range — L-Versions: 3.0 to 5.5 volts — Others: 4.5 to 5.5 volts

386SX

Abstract: VL82C286 t056 5091M TD351 VL82C331 tSU57 LIM EMS 4.0 vlsi 386sx VL82C320
Contextual Info: VLSI T e c h n o l o g y , in c . VL82C320 SYSTEM CONTROLLER/DATA BUFFER DESCRIPTION The VL82C320 contains the system control and data buffering functions in a 160-lead quad flat pack. The VL82C320's functions are highly program m able via a set of internal

IS49NLC96400

Contextual Info: IS49NLC96400,IS49NLC18320,IS49NLC36160 576Mb x9, x18, x36 Common I/O RLDRAM 2 Memory ADVANCED INFORMATION JULY 2011 FEATURES •          533MHz DDR operation (1.067 Gb/s/pin data rate) 38.4Gb/s peak bandwidth (x36 at 533 MHz

IS49NLC36160-18BL

Abstract: FBGA144 IS49NLC96400
Contextual Info: IS49NLC96400,IS49NLC18320,IS49NLC36160 576Mb x9, x18, x36 Common I/O RLDRAM 2 Memory ADVANCED INFORMATION JULY 2012 FEATURES •         533MHz DDR operation (1.067 Gb/s/pin data rate) 38.4Gb/s peak bandwidth (x36 at 533 MHz

Contextual Info: Preliminary GS4576C09/18/36L 144-Ball BGA Commercial Temp Industrial Temp 64M x 9, 32M x 18, 16M x 36 576Mb CIO Low Latency DRAM LLDRAM II 533 MHz–300 MHz 2.5 V VEXT 1.8 V VDD 1.5 V or 1.8 V VDDQ Features Introduction • Pin- and function-compatible with Micron RLDRAM II

GS4576C36GL-24I

Abstract: GS4576C09GL-24I GS4576C36GL-25I GS4576C18GL-25I GS4576C09GL-25I J2/GS4576C09GL-24I
Contextual Info: GS4576C09/18/36L 144-Ball BGA Commercial Temp Industrial Temp 64M x 9, 32M x 18, 16M x 36 576Mb CIO Low Latency DRAM LLDRAM II 533 MHz–300 MHz 2.5 V VEXT 1.8 V VDD 1.5 V or 1.8 V VDDQ Features Introduction • Pin- and function-compatible with Micron RLDRAM II

LLDRAM

Contextual Info: Preliminary GS4576C09/18/36L 144-Ball BGA Commercial Temp Industrial Temp 64M x 9, 32M x 18, 16M x 36 576Mb CIO Low Latency DRAM LLDRAM II 533 MHz–300 MHz 2.5 V VEXT 1.8 V VDD 1.5 V or 1.8 V VDDQ Features Introduction • Pin- and function-compatible with Micron RLDRAM II

576mb

Abstract: delta A221 J2/GS4576C09GL-24I
Contextual Info: Preliminary GS4576C09/18/36L 144-Ball BGA Commercial Temp Industrial Temp 64M x 9, 32M x 18, 16M x 36 576Mb CIO Low Latency DRAM LLDRAM II 533 MHz–300 MHz 2.5 V VEXT 1.8 V VDD 1.5 V or 1.8 V VDDQ Features Introduction • Pin- and function-compatible with Micron RLDRAM II

J2/GS4576C09GL-24I

Contextual Info: Preliminary GS4576C09/18/36L 144-Ball BGA Commercial Temp Industrial Temp 64M x 9, 32M x 18, 16M x 36 576Mb CIO Low Latency DRAM LLDRAM II 533 MHz–300 MHz 2.5 V VEXT 1.8 V VDD 1.5 V or 1.8 V VDDQ Features Introduction • Pin- and function-compatible with Micron RLDRAM II

J2/GS4576C09GL-24I

Contextual Info: Preliminary GS4576C09/18/36L 144-Ball BGA Commercial Temp Industrial Temp 64M x 9, 32M x 18, 16M x 36 576Mb CIO Low Latency DRAM LLDRAM II 533 MHz–300 MHz 2.5 V VEXT 1.8 V VDD 1.5 V or 1.8 V VDDQ Features Introduction • Pin- and function-compatible with Micron RLDRAM II

DK97

Abstract: RLDRAM J2/GS4576C09GL-24I
Contextual Info: Preliminary GS4576C09/18/36L 144-Ball BGA Commercial Temp Industrial Temp 64M x 9, 32M x 18, 16M x 36 576Mb CIO Low Latency DRAM LLDRAMTM II 533 MHz–300 MHz 2.5 V VEXT 1.8 V VDD 1.5 V or 1.8 V VDDQ Features Introduction • Pin- and function-compatible with Micron RLDRAM II

J2/GS4576C09GL-24I

Contextual Info: Preliminary GS4576C09/18/36L 144-Ball µBGA Commercial Temp Industrial Temp 64M x 9, 32M x 18, 16M x 36 576Mb CIO Low Latency DRAM LLDRAM II 533 MHz–300 MHz 2.5 V VEXT 1.8 V VDD 1.5 V or 1.8 V VDDQ Features Introduction • Pin- and function-compatible with Micron RLDRAM II

J2/GS4576C09GL-24I

Contextual Info: Preliminary GS4576C09/18/36L 144-Ball BGA Commercial Temp Industrial Temp 64M x 9, 32M x 18, 16M x 36 576Mb CIO Low Latency DRAM LLDRAM II 533 MHz–300 MHz 2.5 V VEXT 1.8 V VDD 1.5 V or 1.8 V VDDQ Features Introduction • Pin- and function-compatible with Micron RLDRAM II

IS49NLS18320

Contextual Info: IS49NLS96400,IS49NLS18320 576Mb x9, x18 Separate I/O RLDRAM 2 Memory ADVANCED INFORMATION JULY 2012 FEATURES •         533MHz DDR operation (1.067 Gb/s/pin data rate) 38.4 Gb/s peak bandwidth (x18 Separate I/O at

IS49NLS18320

Contextual Info: IS49NLS96400,IS49NLS18320 576Mb x9, x18 Separate I/O RLDRAM 2 Memory ADVANCED INFORMATION JULY 2011 FEATURES •          533MHz DDR operation (1.067 Gb/s/pin data rate) 38.4 Gb/s peak bandwidth (x18 Separate I/O at

IS49NLC96400

Contextual Info: IS49NLC96400,IS49NLC18320,IS49NLC36160 576Mb x9, x18, x36 Common I/O RLDRAM 2 Memory ADVANCED INFORMATION FEBRUARY 2012 FEATURES • • • • • • • • • 533MHz DDR operation (1.067 Gb/s/pin data rate) 38.4Gb/s peak bandwidth (x36 at 533 MHz

IS49NLC96400

Contextual Info: IS49NLC96400,IS49NLC18320,IS49NLC36160 576Mb x9, x18, x36 Common I/O RLDRAM 2 Memory DECEMBER 2012 FEATURES • • • • • • • • • • 400MHz DDR operation (800Mb/s/pin data rate) 28.8Gb/s peak bandwidth (x36 at 400 MHz clock frequency) Reduced cycle time (15ns at 400MHz)

issi 935

Abstract: DK QK BA1 K11 33bl IS49NLC96400
Contextual Info: IS49NLC96400,IS49NLC18320,IS49NLC36160 576Mb x9, x18, x36 Common I/O RLDRAM 2 Memory DECEMBER 2012 FEATURES • • • • • • • • • • 400MHz DDR operation (800Mb/s/pin data rate) 28.8Gb/s peak bandwidth (x36 at 400 MHz clock frequency) Reduced cycle time (15ns at 400MHz)

29LV008

Abstract: AM29LV008 flash am29lv008B PAL PATTERN GENERATOR SA10 SA11
Contextual Info: PRELIMINARY Am29LV008T/Am29LV008B 8 Megabit 1,048,576 x 8-Bit CMOS 3.0 Volt-only, Sectored Flash Memory DISTINCTIVE CHARACTERISTICS • 2.7 to 3.6 volt, extended voltage range for read and write operations — Minimizes system-level power requirements ■ Compatibility with JEDEC standards

M1017

Abstract: IS49NLS18160
Contextual Info: IS49NLS93200,IS49NLS18160 288Mb x9, x18 Separate I/O RLDRAM 2 Memory ADVANCED INFORMATION JULY 2012 FEATURES •         533MHz DDR operation (1.067 Gb/s/pin data rate) 38.4 Gb/s peak bandwidth (x18 Separate I/O at

BC25 327

Abstract: AF3 din 74 j29 p190 U28 726 IO464 BC25 328 547 B34 R3E28 AH36 AE31
Contextual Info: XC4000XLA/XV Field Programmable Gate Arrays January 28, 1999 Version 1.0 0* R XC4000XLA/XV Field Programmable Gate Arrays XC4000XV Family Field Programmable Gate Arrays Package Pinouts XC40110XV Pinout Table XC40110XV Pinout Table (Continued) XC40110XV Pinout Table

a1018

Abstract: IS49NLS18160
Contextual Info: IS49NLS93200,IS49NLS18160 288Mb x9, x18 Separate I/O RLDRAM 2 Memory ADVANCED INFORMATION JULY 2011 FEATURES •          533MHz DDR operation (1.067 Gb/s/pin data rate) 38.4 Gb/s peak bandwidth (x18 Separate I/O at