A19 TRANSISTOR Search Results

Contextual Info: UM10747 SSL5015DB1127 - 120 V/9 W A19 non-isolated buck LED driver demo board Rev. 1 — 6 February 2014 User manual Document information Info Content Keywords SSL5015DB1127, SSL5015TE, LED driver, non-isolated buck typology, A19 applications, HSO8 package

WJ-A19-1

Abstract: WJ-CA19-1 WJA19
Contextual Info: WJ-A19-1 /SMA19-1 10 to 1000 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH OUTPUT POWER: +22.5 dBm TYP. HIGH THIRD ORDER IP. +35 dBm (TYP.) MEDIUM NOISE FIGURE: 6.0 dB (TYP.) Outline Drawings A19-1 0.200 (5.06) Specifications

Contextual Info: UM10860 SSL5231DB1245 120 V dimmable A19 demo board Rev. 1 — 8 January 2015 User manual Document information Info Content Keywords SSL5231DB1245, SSL5321T, dimmable, LED driver, buck-boost converter, A19 Abstract This user manual describes The SSL5231DB1245 demo board. The demo

Non-isolated Buck LED Driver IC

Contextual Info: UM10749 SSL5018DB1125 - 230 V/9 W A19 non-isolated buck LED driver demo board Rev. 1 — 6 February 2014 User manual Document information Info Content Keywords SSL5018DB1125, SSL5018TE, LED driver, non-isolated buck typology, A19 applications, HSO8 package

A19 transistor

Abstract: A19-1 CA19-1 SMA19-1
Contextual Info: Cascadable Amplifier 10 to 1000 MHz A19-1 / SMA19-1 V3 Features Product Image • HIGH OUTPUT POWER: +22.5 dBm TYP. • HIGH THIRD ORDER I.P.: +35 dBm (TYP.) • MEDIUM NOISE FIGURE: 6.0 dB (TYP.) Description The A19-1 RF amplifier is a discrete thin film hybrid design,

WJ-CA19-1

Contextual Info: uuU A19-1 /SMA19-1 W M BM KKm 10 to 1000 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH OUTPUT POWER: +22.5 dBm TYP. HIGH THIRD ORDER I.P. +35 dBm (TYP.) MEDIUM NOISE FIGURE: 6.0 dB (TYP.) Outline Drawings A19-1 Specifications

transistor TE 2198

Abstract: WJ-A19
Contextual Info: WJ-A19/SMA19 10 TO 1000 M HZ TO-8 CASCADABLE AMPLIFIER ♦ AVAILABLE IN SURFACE MOUNT ♦ HIGH OUTPUT POWER: +21 dBm TYP. ♦ HIGH THIRD ORDER I P.: +34 dBm (TYP.) Outline Drawings Specifications5* A19 Typical Characteristics Guaranteed 0° to 50°C -54° to +85°C

A19 transistor

Abstract: A19-1 CA19-1 SMA19-1 CA191
Contextual Info: A19-1 / SMA19-1 Cascadable Amplifier 10 to 1000 MHz Rev. V3 Features Product Image • HIGH OUTPUT POWER: +22.5 dBm TYP. • HIGH THIRD ORDER I.P.: +35 dBm (TYP.) • MEDIUM NOISE FIGURE: 6.0 dB (TYP.) Description The A19-1 RF amplifier is a discrete thin film hybrid design,

Contextual Info: A19-1 / SMA19-1 Cascadable Amplifier 10 to 1000 MHz Rev. V3 Features Product Image • HIGH OUTPUT POWER: +22.5 dBm TYP. • HIGH THIRD ORDER I.P.: +35 dBm (TYP.) • MEDIUM NOISE FIGURE: 6.0 dB (TYP.) Description The A19-1 RF amplifier is a discrete thin film hybrid design,

SMD A19

Abstract: IEC55015 A19 SMD transistor
Contextual Info: UM10702 SSL2109ADB1110 120 V 9 W A19 high PF isolated LED driver demo board Rev. 1.1 — 27 June 2013 User manual Document information Info Content Keywords SSL2109ADB1110, isolated, flyback, demo board, LED driver, LED, 9 W, A19 Abstract This document describes the performance, technical data and the

Contextual Info: A19-1/SMA19-1 10 TO 1000 MHz CASCADABLE AMPLIFIER • HIGH OUTPUT POWER: +22.5 dBm TYP. · HIGH THIRD ORDER I.P.: +35 dBm (TYP.) · MEDIUM NOISE FIGURE: 6.0 dB (TYP.) Typical Performance @ 25°C Specifications (Rev. Date: 11/00)* Characteristics Typical Frequency

CA19-1

Abstract: SMA19-1 A19-1 SMA19
Contextual Info: A19-1/SMA19-1 10 TO 1000 MHz CASCADABLE AMPLIFIER • HIGH OUTPUT POWER: +22.5 dBm TYP. · HIGH THIRD ORDER I.P.: +35 dBm (TYP.) · MEDIUM NOISE FIGURE: 6.0 dB (TYP.) Typical Performance @ 25°C Specifications (Rev. Date: 11/00)* Characteristics Typical Frequency

NCL30082

Contextual Info: AND9131/D Designing a LED Driver with the NCL30080/81/82/83 www.onsemi.com Introduction As LED lighting finds its way into low wattage applications, lamp designers are challenged for a variety of conflicting requirements. Size is often dictated by the incumbent lamp and fixture size whether it’s A19, GU10,

transistor 649A

Contextual Info: User's Guide SNOA559B – October 2011 – Revised May 2013 AN-2127 LM3448 A19 Edison Retrofit Evaluation Board 1 Introduction This demonstration board highlights the performance of a LM3448 non-isolated LED driver solution that can be used to power a single LED string consisting of eight to twelve series connected LEDs from a 85

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µ PD44321182, 44321362 32M-BIT ZEROSBTM SRAM PIPELINED OPERATION Description The µPD44321182 is a 2,097,152-word by 18-bit and the µPD44321362 is a 1,048,576-word by 36-bit ZEROSB static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell.

M15958

Abstract: MARKING C75
Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µ PD44321181, 44321361 32M-BIT ZEROSBTM SRAM FLOW THROUGH OPERATION Description The µPD44321181 is a 2,097,152-word by 18-bit and the µPD44321361 is a 1,048,576-word by 36-bit ZEROSB static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell.

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µ PD44321181, 44321361 32M-BIT ZEROSBTM SRAM FLOW THROUGH OPERATION Description The µPD44321181 is a 2,097,152-word by 18-bit and the µPD44321361 is a 1,048,576-word by 36-bit ZEROSB static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell.

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µ PD44321182, 44321362 32M-BIT ZEROSBTM SRAM PIPELINED OPERATION Description The µPD44321182 is a 2,097,152-word by 18-bit and the µPD44321362 is a 1,048,576-word by 36-bit ZEROSB static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell.

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µ PD44321182, 44321362 32M-BIT ZEROSBTM SRAM PIPELINED OPERATION Description The µPD44321182 is a 2,097,152-word by 18-bit and the µPD44321362 is a 1,048,576-word by 36-bit ZEROSB static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell.

transistor marking A19

Abstract: A6 marking
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT PD44321181, 44321361 32M-BIT ZEROSBTM SRAM FLOW THROUGH OPERATION Description The μPD44321181 is a 2,097,152-word by 18-bit and the μPD44321361 is a 1,048,576-word by 36-bit ZEROSB static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell.

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT PD44321182, 44321362 32M-BIT ZEROSBTM SRAM PIPELINED OPERATION Description The μPD44321182 is a 2,097,152-word by 18-bit and the μPD44321362 is a 1,048,576-word by 36-bit ZEROSB static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell.

PG-DSO-20

Abstract: a1807 PTFA211801E H-32259-2 lt 860 PTFA071701GL ptfa072401fl 1800 ldmos 1805-1880 PTMA210452M
Contextual Info: Never stop thinking RF Power Product Selection Guide LDMOS Transistors and ICs [ www.infineon.com/rfpower ] Product Selection Guide I N F I N E O N ’ S state-of-the-art LDMOS technology, high-volume manufacturing facilities and fully-automated production assembly and test

14549F

Abstract: itt 946 946-5D itt 9094 ITT 946-1D dtl logic gates 9094-5d ITT 9097 5D ITT DTL 944-5D
Contextual Info: ITT Sem iconductors Integrated C irc u its -D T L D T L Series L o g ic Elem ents The D T L fam ily is a com prehensive set of silicon m onolithic logic elements designed to cover a wide range of military and industrial applications. The basis of the fam ily is a diode-transistor

HM624100HC

Abstract: HM624100HCJP-10 HM624100HCLJP-10 Hitachi DSA00316
Contextual Info: HM624100HC Series 4M High Speed SRAM 1-Mword x 4-bit ADE-203-1198B (Z) Rev. 1.0 Nov. 30, 2001 Description The HM624100HC is a 4-Mbit high speed static RAM organized 1-Mword × 4-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing