A1892 Search Results

2SA1892

Abstract: 2SC5029
Contextual Info: A1892 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process A1892 Power Amplifier Applications Power Switching Applications • Unit: mm Low collector-emitter saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A, IB = −0.05 A) • High collector power dissipation: PC = 1.3 W

ECH8673

Abstract: ECH81
Contextual Info: ECH8673 Ordering number : A1892 SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFETs ECH8673 General-Purpose Switching Device Applications Features • • • • ON-resistance Nch: RDS on 1=65mΩ(typ.), Pch: ON-resistance RDS(on)1=125mΩ(typ.)

Contextual Info: ECH8673 Ordering number : A1892 SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFETs ECH8673 General-Purpose Switching Device Applications Features • • • • ON-resistance Nch: RDS on 1=65mΩ(typ.), Pch: ON-resistance RDS(on)1=125mΩ(typ.)

usb schema

Abstract: schema sata data to usb CB-55 fcbg nec cb core
Contextual Info: CB-55 55 nm Features >> 55 nm technology >> Up to 7 metal layers >> Very high gate count: 200 million gates raw >> 1.0 and 1.2 V core voltage optimized architecture >> Extremely low power consumption down to 0.29 nW/MHz/gate >> Extremely low leakage current using high-k transistors over silicon

2SA1892

Abstract: 2SC5029
Contextual Info: A1892 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process A1892 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector-emitter saturation voltage: VCE (sat) = −0.5 V (max) • High collector power dissipation: PC = 1.3 W

A1892

Contextual Info: A1892 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process A1892 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector-emitter saturation voltage: VCE (sat) = −0.5 V (max) • High collector power dissipation: PC = 1.3 W

Contextual Info: Ordering number : A1892B ECH8673 Power MOSFET http://onsemi.com 40V, 3.5A, 85mΩ, –40V –2.5A, 163mΩ, Complementary Dual ECH8 Features • • • • ON-resistance Nch: RDS on 1=65mΩ(typ.), Pch: ON-resistance RDS(on)1=125mΩ(typ.) 4V drive Halogen free compliance

A1892

Abstract: 2SA1892 2SC5029
Contextual Info: A1892 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 A1892 ○ 電力増幅用 ○ 電力スイッチング用 • 単位: mm コレクタ•エミッタ間飽和電圧が低い。 : VCE (sat) = −0.5 V (最大) (IC = −1 A, IB = −0.05 A)

Contextual Info: ECH8673 Ordering number : A1892A SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFETs ECH8673 General-Purpose Switching Device Applications Features • • • • ON-resistance Nch: RDS on 1=65mΩ(typ.), Pch: ON-resistance RDS(on)1=125mΩ(typ.)