A18 TRANSISTOR Search Results

WJ-A18-1

Abstract: 4582 transistor
Contextual Info: WJ-A18-1 /SMA18-1 10 to 1000 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH DYNAMIC RANGE HIGH OUTPUT POWER: +16 dBm TYP. HIGH THIRD ORDER I.P.: +30 dBm (TYP.) LOW NOISE: 3.8 dB (TYP.) Outline Drawings A18-1 Specifications5*

A18-1

Abstract: CA18-1 SMA18-1
Contextual Info: Cascadable Amplifier 10 to 1000 MHz A18-1 / SMA18-1 V3 Features • • • • Product Image HIGH DYNAMIC RANGE HIGH OUTPUT POWER: +16 dBm TYP. HIGH THIRD ORDER I.P.: +30 dBM (TYP.) LOW NOISE: 3.8 dB (TYP.) Description The A18-1 RF amplifier is a discrete hybrid design, which uses

A18-1

Abstract: CA18-1 SMA18-1 A181 CA18 A18 transistor
Contextual Info: A18-1 / SMA18-1 Cascadable Amplifier 10 to 1000 MHz Rev. V3 Features • • • • Product Image HIGH DYNAMIC RANGE HIGH OUTPUT POWER: +16 dBm TYP. HIGH THIRD ORDER I.P.: +30 dBM (TYP.) LOW NOISE: 3.8 dB (TYP.) Description The A18-1 RF amplifier is a discrete hybrid design, which uses

70413080

Abstract: 70473180 SAC-187 Motorola 70483180 70483100 70484200 70487478 70484140 SJ-6357 70483180
Contextual Info: SEMI-CONDUCTOR/TRANSISTOR CROSS-REFERENCE LIST Peavey Electronics Corporation ORIGINAL IN-HOUSE NUMBER ALTERNATE IN-HOUSE NUMBER FIELD REPLACEMENT NUMBER ORDER NUMBER NOTES TO-92 TRANSISTORS 2N3391 A SPS-953(A, B) MPS-8097, 2N6520 MPS-A18, 2N6539, SK-3919

RF TRANSISTOR 1.5 GHZ

Abstract: A18-1 CA18-1 SMA18-1
Contextual Info: A18-1/SMA18-1 10 TO 500 MHz CASCADABLE AMPLIFIER • HIGH DYNAMIC RANGE · HIGH OUTPUT POWER: +16 dBm TYP. · HIGH THIRD ORDER I.P.: +30 dBm (TYP.) · LOW NOISE: 3.8 dB (TYP.) Typical Performance @ 25°C Specifications (Rev. Date: 11/00)* Characteristics

Contextual Info: A18-1/SMA18-1 10 TO 1000 MHz TO-8 CASCADABLE AMPLIFIER • HIGH DYNAMIC RANGE · HIGH OUTPUT POWER: +16 dBm TYP. · HIGH THIRD ORDER I.P.: +30 dBm (TYP.) · LOW NOISE: 3.8 dB (TYP.) Typical Performance @ 25°C Specifications (Rev. Date: 4/02)* Characteristics

BC 148 TRANSISTOR

Abstract: WJ-A18-1 wj 508 coto 1200
Contextual Info: ü j j A18-1/SMA18-1 10 to 1000 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH DYNAMIC RANGE HIGH OUTPUT POWER: +16 dBm TYP. HIGH THIRD ORDER I.P.: +30 dBm (TYP.) LOW NOISE: 3.8 dB (TYP.) Outline Drawings A 1 8-1 Specifications’1

tahc10

Abstract: AOtoA18 aft12
Contextual Info: TOSHIBA TC51V8512AF/AFT-12,-15 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 524,288-WORD BY 8-BIT CMOS PSEUDO STATIC RAM DESCRIPTION The TC51V8512AF/AFT is a 4,194,304-bit CMOS pseudo static random access memory PSRAM organized as 524,288 words by 8 bits. It feature a one-transistor dynamic memory cell using CMOS peripheral circuitry to

TC518512AF

Abstract: TC518512
Contextual Info: TOSHIBA T C 518512A F/AFT-70,-80,-10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 524,288-WORD BY 8-BIT CMOS PSEUDO STATIC RAM DESCRIPTION The TC518512AF/AFT is a 4,194,304-bit CMOS pseudo static random access memory PSRAM organized as 524,288 words by 8 bits. It feature a one-transistor dynamic memory cell using CMOS peripheral circuitry to

TC518512

Contextual Info: TOSHIBA TC518512AF/AFT-70,-80,-10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 524,288-WORD BY 8-BIT CMOS PSEUDO STATIC RAM DESCRIPTION The TC518512AF/AFT is a 4,194,304-bit CMOS pseudo static random access memory PSRAM organized as 524,288 words by 8 bits. It feature a one-transistor dynamic memory cell using CMOS peripheral circuitry to

Contextual Info: T O S H IB A TC51V8512AF/AFT-12,-15 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 524,288-WORD BY 8-BIT CMOS PSEUDO STATIC RAM DESCRIPTION The TC51V8512AF/AFT is a 4,194,304-bit CMOS pseudo static random access memory PSRAM organized as 524,288 words by 8 bits. It feature a one-transistor dynamic memory cell using CMOS peripheral circuitry to

TC518512AF

Abstract: C701 T
Contextual Info: TOSHIBA TC518512AF/AFT-70V,-80V,-10V TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 524,288-WORD BY 8-BIT CMOS PSEUDO STATIC RAM DESCRIPTION The TC518512AF/AFT is a 4,194,304-bit CMOS pseudo static random access memory PSRAM organized as 524,288 words by 8 bits. It feature a one-transistor dynamic memory cell using CMOS peripheral circuitry to

Contextual Info: TOSHIBA TC518512FIvTl/FII/TOL-70 L'I /8QflJ)/10a3) SILICON GATE CMOS 524,288 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518512PL is a 4M bit high speed CMOS pseudo static RAM organized as 524,288 words by 8 bits. The TC518512PL utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The

Contextual Info: TOSHIBA TC518512 AF/AFT-70 V,-80 V ,-10 V TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 524,288-WORD BY 8-BIT CMOS PSEUDO STATIC RAM DESCRIPTION The TC518512AF/AFT is a 4,194,304-bit CMOS pseudo static random access memory PSRAM organized as 524,288 words by 8 bits. It feature a one-transistor dynamic memory cell using CMOS peripheral circuitry to

Hitachi DSA00276

Contextual Info: HM62V8512C Series 4 M SRAM 512-kword x 8-bit ADE-203-1210B (Z) Rev. 2.0 Apr. 16, 2001 Description The Hitachi HM62V8512C is a 4-Mbit static RAM organized 512-kword × 8-bit. It realizes higher density, higher performance and low power consumption by employing CMOS process technology (6-transistor

Hitachi DSA002730

Contextual Info: HM628512C Series 4 M SRAM 512-kword x 8-bit ADE-203-1212A (Z) Rev. 1.0 Mar. 5, 2001 Description The Hitachi HM628512C is a 4-Mbit static RAM organized 512-kword × 8-bit. It realizes higher density, higher performance and low power consumption by employing CMOS process technology (6-transistor

HM628512C

Abstract: HM628512CLFP-5 HM628512CLFP-5SL HM628512CLFP-7 HM628512CLP-5 HM628512CLP-5SL HM628512CLP-7 HM628512CLTT-5 HM628512CLTT-7 Hitachi DSA0015
Contextual Info: HM628512C Series 4 M SRAM 512-kword x 8-bit ADE-203-1212B (Z) Rev. 2.0 May. 14, 2001 Description The Hitachi HM628512C is a 4-Mbit static RAM organized 512-kword × 8-bit. It realizes higher density, higher performance and low power consumption by employing CMOS process technology (6-transistor

HM62V8512C

Abstract: HM62V8512CLFP-5 HM62V8512CLFP-5SL HM62V8512CLFP-7 HM62V8512CLFP-7SL HM62V8512CLTT-5 HM62V8512CLTT-5SL HM62V8512CLTT-7 HM62V8512CLTT-7SL Hitachi DSA0015
Contextual Info: HM62V8512C Series 4 M SRAM 512-kword x 8-bit ADE-203-1210C (Z) Rev. 3.0 Jul. 23, 2001 Description The Hitachi HM62V8512C is a 4-Mbit static RAM organized 512-kword × 8-bit. It realizes higher density, higher performance and low power consumption by employing CMOS process technology (6-transistor

HM62V8512C

Abstract: HM62V8512CLFP-5 HM62V8512CLFP-5SL HM62V8512CLFP-7 HM62V8512CLFP-7SL HM62V8512CLTT-5 HM62V8512CLTT-5SL HM62V8512CLTT-7 HM62V8512CLTT-7SL Hitachi DSA00358
Contextual Info: HM62V8512C Series 4 M SRAM 512-kword x 8-bit ADE-203-1210A (Z) Rev. 1.0 Jan. 31, 2001 Description The Hitachi HM62V8512C is a 4-Mbit static RAM organized 512-kword × 8-bit. It realizes higher density, higher performance and low power consumption by employing CMOS process technology (6-transistor

TC518512

Abstract: transistor D195
Contextual Info: TOSHIBA TC518512PL/FL/FTL/rRL-70LV/80LV/10LV SILICON GATE CMOS 524,288 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description TheTC518512PL is a 4M bit high speed CMOS pseudo static RAM organized as 524,288 w ords by 8 bits. The TC518512PL utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low pow er

TC518512FTL-70

Contextual Info: 5 2 4 ,2 8 8 W O R D S x 8 8 IT CMOS PSEUDO S T A T IC RAM PRELIMINARY D E S C R IP T IO N T he T C 5 1 8 5 1 2 P L F am ily is a 4M b it high speed CM OS Pseudo S tatic RAM organized as 5 2 4 ,2 8 8 words by 8 bits. T he T C 5 1 8 5 1 2 P L F am ily u tilizin g one transistor dynamic memory cell with CM OS

HM62W8511HCJPI

Abstract: HM62W8511HCJPI-12 DSA003633
Contextual Info: HM62W8511HCI Series Wide Temperature Range Version 4M High Speed SRAM 512-kword x 8-bit ADE-203-1283A (Z) Rev. 1.0 Nov. 9, 2001 Description The HM62W8511HCI is a 4-Mbit high speed static RAM organized 512-kword × 8-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing

HM628511CJPI12

Abstract: HM628511HCI HM628511HCJPI HM628511HCJPI-12 DSA003633
Contextual Info: HM628511HCI Series Wide Temperature Range Version 4M High Speed SRAM 512-kword x 8-bit ADE-203-1304A (Z) Rev. 1.0 Nov. 30, 2001 Description The HM628511HCI Series is a 4-Mbit high speed static RAM organized 512-k word × 8-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell)and high speed

HM62W8511HI

Abstract: HM62W8511HJPI HM62W8511HJPI-15 Hitachi DSA00358
Contextual Info: HM62W8511HI Series 4M High Speed SRAM 512-kword x 8-bit ADE-203-1036A(Z) Rev. 1.0 Apr. 15, 1999 Description The HM62W8511HI is a 4-Mbit high speed static RAM organized 512-kword × 8-bit. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell) and high speed