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    A17122 Search Results

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    Fairview Microwave Inc FMCA1712-24

    COAX CBL N-TYPE TO TNC 24"
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    DigiKey FMCA1712-24 Bag 1
    • 1 $346.93
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    Mouser Electronics FMCA1712-24
    • 1 $334.18
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    Newark FMCA1712-24 Bulk 7 1
    • 1 $346.93
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    RS FMCA1712-24 Bulk 8 Weeks 1
    • 1 $343.98
    • 10 $309.58
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    Fairview Microwave Inc FMCA1712-200CM

    COAX CBL N-TYPE TO TNC 6.6'
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    DigiKey FMCA1712-200CM Bag 1
    • 1 $546.13
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    Mouser Electronics FMCA1712-200CM
    • 1 $545.70
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    Newark FMCA1712-200CM Bulk 7 1
    • 1 $546.13
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    RS FMCA1712-200CM Bulk 8 Weeks 1
    • 1 $565.01
    • 10 $508.51
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    SEMIKRON SKD 30/02 A1 (7122090)

    POWER BRIDGE RECTIFIERS; HERMETIC METAL CASE WITH EPOXY INSULATOR ; 200V; 50A
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    RS SKD 30/02 A1 (7122090) Bulk 1
    • 1 $113.20
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    Walsin Technology Corporation RFDPA171224IMLB402

    WTCRFDPA171224IMLB402 ANTENNA,OMNI,2.4GH (Alt: RFDPA171224IMLB402)
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    Avnet Asia RFDPA171224IMLB402 12 Weeks 2,000
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    A17122 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    a1712 mosfet

    Abstract: A1712
    Contextual Info: Ordering number : ENA1712A ATP214 N-Channel Power MOSFET http://onsemi.com 60V, 75A, 8.1mΩ, Single ATPAK Features • • • ON-resistance RDS on 1=6.2mΩ(typ.) 4V drive Protection diode in Input Capacitance Ciss=4850pF(typ.) Halogen free compliance •


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    ENA1712A ATP214 4850pF PW10s) PW10s, L100H, A1712-7/7 a1712 mosfet A1712 PDF

    transistor a1413

    Abstract: a1413 a2305 4b42 A14129 ls-t73 transistor a1412 a2400 a2380 A18004
    Contextual Info: Motorola XGATE Assembler Revised 02-Jun-2004 Metrowerks and the Metrowerks logo are registered trademarks of Metrowerks Corporation in the United States and/ or other countries. CodeWarrior is a trademark or registered trademark of Metrowerks Corporation in the United States


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    02-Jun-2004 transistor a1413 a1413 a2305 4b42 A14129 ls-t73 transistor a1412 a2400 a2380 A18004 PDF

    MSWSH

    Abstract: MSWSH-040-30
    Contextual Info: MSWSH-040-30 PIN DIODE SHUNT SWITCH ELEMENT 2012 Molden Plastic DFN Description Features A broadband, high linearity, medium power shunt switch element in a 1.9 X 1.1 mm DFN package. This device is designed for wireless telecommunications infrastructure and test instrument applications. It is


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    MSWSH-040-30 STD-J-20C A17122 MSWSH MSWSH-040-30 PDF

    A1712

    Abstract: a1712 mosfet
    Contextual Info: ATP214 Ordering number : ENA1712A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ATP214 General-Purpose Switching Device Applications Features • • • ON-resistance RDS on 1=6.2mΩ(typ.) 4V drive Protection diode in Input Capacitance Ciss=4850pF(typ.)


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    ATP214 ENA1712A 4850pF A1712-7/7 A1712 a1712 mosfet PDF

    a1712

    Abstract: a1712 mosfet a1712-1 ENA1712
    Contextual Info: ATP214 Ordering number : ENA1712 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ATP214 General-Purpose Switching Device Applications Features • • ON-resistance RDS on 1=6.2mΩ(typ.) 4V drive • • Input Capacitance Ciss=4850pF(typ.) Halogen free compliance


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    ENA1712 ATP214 4850pF PW10s) PW10s, A1712-4/4 a1712 a1712 mosfet a1712-1 ENA1712 PDF

    a1712 mosfet

    Abstract: A1712
    Contextual Info: ATP214 Ordering number : ENA1712A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ATP214 General-Purpose Switching Device Applications Features • • • ON-resistance RDS on 1=6.2mΩ(typ.) 4V drive Protection diode in Input Capacitance Ciss=4850pF(typ.)


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    ATP214 ENA1712A 4850pF A1712-7/7 a1712 mosfet A1712 PDF

    a1712

    Abstract: a1712 mosfet a1712 transistor a1712-1 ATP214 ENA1712 A1712-4
    Contextual Info: ATP214 Ordering number : ENA1712 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ATP214 General-Purpose Switching Device Applications Features • • ON-resistance RDS on 1=6.2mΩ(typ.) 4V drive • • Input Capacitance Ciss=4850pF(typ.) Halogen free compliance


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    ATP214 ENA1712 4850pF PW10s, PW10s) A1712-4/4 a1712 a1712 mosfet a1712 transistor a1712-1 ATP214 ENA1712 A1712-4 PDF

    Contextual Info: MSWSH-040-30 PIN DIODE SHUNT SWITCH ELEMENT 2012 Molden Plastic DFN Description Features A broadband, high linearity, medium power shunt switch element in a 1.9 X 1.1 mm DFN package. This device is designed for wireless telecommunications infrastructure and test instrument applications. It is


    Original
    MSWSH-040-30 STD-J-20C A17122 PDF

    Contextual Info: MSWSH-040-30 PIN DIODE SHUNT SWITCH ELEMENT 2012 Molden Plastic DFN Description Features A broadband, high linearity, medium power shunt switch element in a 1.9 X 1.1 mm DFN package. This device is designed for wireless telecommunications infrastructure and test instrument applications. It is


    Original
    MSWSH-040-30 A17122 PDF

    A1712

    Abstract: a1712 mosfet a1712-1 A1712-4 4850p S4850 ATP214
    Contextual Info: ATP214 注文コード No. N A 1 7 1 2 三洋半導体データシート N ATP214 N チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・ オン抵抗 RDS on 1=6.2mΩ(typ.) ・ 4V 駆動 ・ 入力容量 Ciss=4850pF(typ.)


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    ATP214 4850pF JEDET15696 IT15711 IT15514 A1712-3/4 A1712 a1712 mosfet a1712-1 A1712-4 4850p S4850 ATP214 PDF