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    A17122 Search Results

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    Fairview Microwave Inc FMCA1712-24

    Rf/Coaxial Cbl Assy, Low Loss, 24"; |Fairview Microwave FMCA1712-24
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark FMCA1712-24 Bulk 1
    • 1 $378.53
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    • 100 $378.53
    • 1000 $378.53
    • 10000 $378.53
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    Fairview Microwave Inc FMCA1712-200CM

    Rf/Coaxial Cable Assembly; |Fairview Microwave FMCA1712-200CM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark FMCA1712-200CM Bulk 1
    • 1 $559.37
    • 10 $559.37
    • 100 $559.37
    • 1000 $559.37
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    SEMIKRON SKD 30/02 A1 (7122090)

    POWER BRIDGE RECTIFIERS; HERMETIC METAL CASE WITH EPOXY INSULATOR ; 200V; 50A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS SKD 30/02 A1 (7122090) Bulk 1
    • 1 $122.64
    • 10 $111.60
    • 100 $111.60
    • 1000 $111.60
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    A17122 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    a1712 mosfet

    Abstract: A1712
    Contextual Info: Ordering number : ENA1712A ATP214 N-Channel Power MOSFET http://onsemi.com 60V, 75A, 8.1mΩ, Single ATPAK Features • • • ON-resistance RDS on 1=6.2mΩ(typ.) 4V drive Protection diode in Input Capacitance Ciss=4850pF(typ.) Halogen free compliance •


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    ena1712aatp2144850pfpw10s+4l100ha1712-7/7a1712 mosfeta1712 PDF

    transistor a1413

    Abstract: a1413 a2305 4b42 A14129 ls-t73 transistor a1412 a2400 a2380 A18004
    Contextual Info: Motorola XGATE Assembler Revised 02-Jun-2004 Metrowerks and the Metrowerks logo are registered trademarks of Metrowerks Corporation in the United States and/ or other countries. CodeWarrior is a trademark or registered trademark of Metrowerks Corporation in the United States


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    02-jun-2004transistor a1413a1413a2305+74b42a14129ls-t73transistor a1412a2400a2380a18004 PDF

    MSWSH

    Abstract: MSWSH-040-30
    Contextual Info: MSWSH-040-30 PIN DIODE SHUNT SWITCH ELEMENT 2012 Molden Plastic DFN Description Features A broadband, high linearity, medium power shunt switch element in a 1.9 X 1.1 mm DFN package. This device is designed for wireless telecommunications infrastructure and test instrument applications. It is


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    mswsh-040-30std-j-20ca17122mswsh PDF

    A1712

    Abstract: a1712 mosfet
    Contextual Info: ATP214 Ordering number : ENA1712A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ATP214 General-Purpose Switching Device Applications Features • • • ON-resistance RDS on 1=6.2mΩ(typ.) 4V drive Protection diode in Input Capacitance Ciss=4850pF(typ.)


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    atp214ena1712a4850pfa1712-7/7+2a1712a1712 mosfet PDF

    a1712

    Abstract: a1712 mosfet a1712-1 ENA1712
    Contextual Info: ATP214 Ordering number : ENA1712 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ATP214 General-Purpose Switching Device Applications Features • • ON-resistance RDS on 1=6.2mΩ(typ.) 4V drive • • Input Capacitance Ciss=4850pF(typ.) Halogen free compliance


    Original
    ena1712atp2144850pfpw10s+4a1712-4/4a1712a1712 mosfeta1712-1 PDF

    a1712 mosfet

    Abstract: A1712
    Contextual Info: ATP214 Ordering number : ENA1712A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ATP214 General-Purpose Switching Device Applications Features • • • ON-resistance RDS on 1=6.2mΩ(typ.) 4V drive Protection diode in Input Capacitance Ciss=4850pF(typ.)


    Original
    atp214ena1712a4850pfa1712-7/7+2a1712 mosfeta1712 PDF

    a1712

    Abstract: a1712 mosfet a1712 transistor a1712-1 ATP214 ENA1712 A1712-4
    Contextual Info: ATP214 Ordering number : ENA1712 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ATP214 General-Purpose Switching Device Applications Features • • ON-resistance RDS on 1=6.2mΩ(typ.) 4V drive • • Input Capacitance Ciss=4850pF(typ.) Halogen free compliance


    Original
    atp214ena17124850pfpw10s+6a1712-4/4a1712a1712 mosfeta1712 transistora1712-1a1712-4 PDF

    Contextual Info: MSWSH-040-30 PIN DIODE SHUNT SWITCH ELEMENT 2012 Molden Plastic DFN Description Features A broadband, high linearity, medium power shunt switch element in a 1.9 X 1.1 mm DFN package. This device is designed for wireless telecommunications infrastructure and test instrument applications. It is


    Original
    mswsh-040-30std-j-20ca17122 PDF

    Contextual Info: MSWSH-040-30 PIN DIODE SHUNT SWITCH ELEMENT 2012 Molden Plastic DFN Description Features A broadband, high linearity, medium power shunt switch element in a 1.9 X 1.1 mm DFN package. This device is designed for wireless telecommunications infrastructure and test instrument applications. It is


    Original
    mswsh-040-30a17122 PDF

    A1712

    Abstract: a1712 mosfet a1712-1 A1712-4 4850p S4850 ATP214
    Contextual Info: ATP214 注文コード No. N A 1 7 1 2 三洋半導体データシート N ATP214 N チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・ オン抵抗 RDS on 1=6.2mΩ(typ.) ・ 4V 駆動 ・ 入力容量 Ciss=4850pF(typ.)


    Original
    atp2144850pfjedet15696it15711+8it15514a1712-3/4a1712a1712 mosfeta1712-1a1712-44850ps4850 PDF