A17 DIODE Search Results

Contextual Info: DISCRETE SEMICONDUCTORS P B Y R 10100 se rie s Schottky Barrier rectifier diodes Product specification Fiie under Discrete Semiconductors, SC02 August 1992 Philips Semiconductors PHILIPS bb53S31 0 032^2 A17 Product s pacification Philips Sem iconductor* PBYR10100 series

C67076-A2506-A17

Contextual Info: BSM 35 GD 120 D2 IGBT Power Module Preliminary data • Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate Type VCE IC BSM 35 GD 120 D2 1200V 50A Package Ordering Code SIXPACK 1 C67076-A2506-A17

C67076-A2505-A17

Contextual Info: BSM 25 GD 120 D2 IGBT Power Module • Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate Type VCE IC BSM 25 GD 120 D2 1200V 35A Package Ordering Code SIXPACK 1 C67076-A2505-A17 Maximum Ratings

C67076-A2504-A17

Contextual Info: BSM 15 GD 120 D2 IGBT Power Module • Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate Type VCE IC BSM 15 GD 120 D2 1200V 25A Package Ordering Code SIXPACK 1 C67076-A2504-A17 Maximum Ratings

ts06 94V0

Abstract: GDH04 ADE02 ADE03 ADE04 ADE06 ADE08 ADE09 ADE10 ADF02
Contextual Info: A GD Series - Page A3 AD Series - Page A7 S Series - Page A11 DPU Series - Page A12 TS Series - Page A16 MRD Series - Page A17 DRD Series - Page A19 DRS Series - Page A27 Need more technical information? Consult your Thomas & Betts sales office listed on the back cover

modul

Abstract: DD171N KM17 ND171N diode a17
Contextual Info: N Datenblatt / Data sheet Netz-Dioden-Modul Rectifier Diode Module DD171N DD171N Elektrische Eigenschaften / Electrical properties Kenndaten Höchstzulässige Werte / Maximum rated values Periodische Spitzensperrspannung repetitive peak reverse voltages DD171N.K.-A

Contextual Info: RF2317 LINEAR CATV AMPLIFIER Typical Applications • CATV Distribution Amplifiers • Laser Diode Driver • Cable Modems • Return Channel Amplifier • Broadband Gain Blocks • Base Stations Product Description The RF2317 is a general purpose, low-cost high-linearity

DIODE A16

Abstract: a15 diode SN74F1018
Contextual Info: SN74F1018 18-BIT SCHOTTKY BARRIER DIODE R-C BUS-TERMINATION ARRAY SDFS094 - NOVEMBER 1992 - REVISED DECEMBER 1993 • • Designed to Reduce Reflection Noise I I 1 | • Repetitive Peak Forward Current. . . 300 mA • 18-Bit Array Structure Suited for Bus-Oriented Systems

Contextual Info: QuickSwitch Products H QS34XR245 High-Speed CMOS QuickSwitch S emiconductor , I nc . ADVANCE in f o r m a t io n 3 2 ' B it L ° W R e s is ta n c e Multi Width Bus Switches FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to Vcc

Power DIODE A30

Abstract: QS34XR245 b12 diode DIODE B12 41 QS34XR245Q3 QS3R245
Contextual Info: QS34XR245 QuickSwitch Products High-Speed CMOS QuickSwitch 32-Bit Low Resistance MultiWidthTM Bus Switches Q QUALITY SEMICONDUCTOR, INC. QS34XR245 FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to VCC • 2.5Ω bidirectional switches connect inputs

Contextual Info: S QuickSwitch Products 3.3V 32-Bit Bus Switch for Hot SwaP Applications HotSwitch ductor Inc q s 34xvh 245 FEATURES/BENEFITS DESCRIPTION • N channel FET switches with no parasitic diode to Vcc - No DC path to Vcc or GND - 5V tolerant in OFF state

diode a29

Contextual Info: QuickSwitch Products QS34XR245 High-Speed C M O S QuickSwitch t o ™ L o w Resistance MultiWidth™ Bus Switches ,in c. 3 2 - B it FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to Vcc • 2.5Q bidirectional switches connect inputs

diode b29

Abstract: QS34XVH245 B14 diode on semiconductor b12 diode DIODE B12 51 DIODE B21 DIODE B31 a30 DIODE DIODE A30
Contextual Info: QS34XVH245 QuickSwitch Products 3.3V 32-Bit Bus Switch for Hot Swap Applications HotSwitchTM Q QUALITY SEMICONDUCTOR, INC. QS34XVH245 FEATURES/BENEFITS DESCRIPTION • N channel FET switches with no parasitic diode to VCC – No DC path to VCC or GND

Contextual Info: QuickSwitch Products High-Speed CMOS qs34X245 qs 34x2245 QuickSwitch 32-Bit Multi Width Bus Switches Semiconductor, I nc. FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to Vcc • Bidirectional switches connect inputs

diode A23

Abstract: QS3245 QS34X2245 QS34X245
Contextual Info: QS34X245, QS34X2245 QuickSwitch Products High-Speed CMOS QuickSwitch 32-Bit MultiWidthTM Bus Switches Q QUALITY SEMICONDUCTOR, INC. QS34X245 QS34X2245 FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to VCC • Bidirectional switches connect inputs

patents integrated SRAMS in 1993

Abstract: S1 DIODE schottky SN74F1018 DIODE A16 DIODE a5 A7 diode schottky
Contextual Info: SN74F1018 18-BIT SCHOTTKY BARRIER DIODE R-C BUS-TERMINATION ARRAY SDFS094 – NOVEMBER 1992 – REVISED DECEMBER 1993 • • • DW PACKAGE TOP VIEW Designed to Reduce Reflection Noise Repetitive Peak Forward Current . . . 300 mA 18-Bit Array Structure Suited for

SN74F1018

Contextual Info: SN74F1018 18-BIT SCHOTTKY BARRIER DIODE R-C BUS-TERMINATION ARRAY SDFS094 – NOVEMBER 1992 – REVISED DECEMBER 1993 • • • DW PACKAGE TOP VIEW Designed to Reduce Reflection Noise Repetitive Peak Forward Current . . . 300 mA 18-Bit Array Structure Suited for

DIODE A16

Abstract: diode a17 sot23 ZC930 ZC933A ZC934A ZC931 ZC932 ZC933 ZC934
Contextual Info: ZC930 SERIES SOT23 SILICON HYPERABRUPT VARIABLE CAPACITANCE DIODES ISSUE 6 - JANUARY 1998 ✪ FEATURES * VHF Tuning * Octave Tuning from 0 TO 6 Volts * High Reliability and Low Parasitics * Low Leakage Typically <200pA at 10V APPLICATIONS * Mobile Radios and Pagers

Contextual Info: IDTQS34XVH2245 2.5V / 3.3V 32-BIT HIGH BANDWIDTH BUS SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS 2.5V / 3.3V 32-BIT HIGH BANDWIDTH BUS SWITCH FEATURES: IDTQS34XVH2245 DESCRIPTION: • N channel FET switches with no parasitic diode to VCC – Isolation under power-off conditions

Contextual Info: IDTQS34XVH245 2.5V / 3.3V 32-BIT HIGH BANDWIDTH BUS SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS 2.5V / 3.3V 32-BIT HIGH BANDWIDTH BUS SWITCH FEATURES: IDTQS34XVH245 DESCRIPTION: • N channel FET switches with no parasitic diode to VCC – Isolation under power-off conditions

IDTQS34XVH2245

Abstract: QS34XVH2245
Contextual Info: IDTQS34XVH2245 2.5V / 3.3V 32-BIT HIGH BANDWIDTH BUS SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS 2.5V / 3.3V 32-BIT HIGH BANDWIDTH BUS SWITCH IDTQS34XVH2245 FEATURES: DESCRIPTION: • N channel FET switches with no parasitic diode to VCC – Isolation under power-off conditions

VHC161284

Abstract: 74ACT1284 74VHC161284 74VHC161284MEA 74VHC161284MTD MS48A MTD48 b1b diode
Contextual Info: Revised October 1999 74VHC161284 IEEE 1284 Transceiver General Description The VHC161284 contains eight bidirectional data buffers and eleven control/status buffers to implement a full IEEE 1284 compliant interface. The device supports the IEEE 1284 standard and is intended to be used in Extended

C14-C17

Abstract: 74ACT1284 74LVX161284A 74LVX161284AMTD MTD48
Contextual Info: Revised June 1999 74LVX161284A Low Voltage IEEE 161284 Translating Transceiver General Description The LVX161284A contains eight bidirectional data buffers and eleven control/status buffers to implement a full IEEE 1284 compliant interface. The device supports the IEEE

IR1210

Abstract: la 4725 ZC930
Contextual Info: ZC930 SERIES SOT23 SILICON HYPERABRUPT VARIABLE CAPACITANCE DIODES ISSUE 6 - JANUARY 1998 Q FEATU RES * V H F T u n in g * O ctave T u n in g fro m 0 T O 6 V o lts * High R e lia b ility and L o w P a ra sitic s * L o w Leak ag e T y p ic a lly < 200pA at 10V