A160A Search Results

Contextual Info: Heizelemente und Thermostate Heating elements and thermostats Maßbild Bezugs­ temperatur Reference temperature Outline drawing Nennwiderstand Bestell-Nr. Rated resistance Ordering code VMes 5 1 . 5 V Tflef ^25 °C Q Vmax = 12V ,A fl = ±30% B59060- A-A10

OA130

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUII ß P D 2 3 C 1 6 0 4 0 A L 16M-BIT M ASK-PROGRAM MABLE ROM 2M -W ORD BY 8-BIT BYTE MODE / 1M-W ORD BY 16-BIT(W ORD MODE) PAGE ACCESS MODE Description The ^¡PD23C16040AL is a 16,777,216 bits mask-programmable ROM. The word organization is selectable (BYTE

Contextual Info: HM101513 Series 262,144-word x 4-bit / 524,288-word x 2-bit Random The Hitachi HM1015I3 is ECL 100 K compatible, reconfigarable 262,144 words by 4 bits or 524,288 words by 2 bits read/write random access memory developed fo r high speed system s. With the

MA156

Abstract: 154wa MA150 S-Mini A152W MA1015 MA165 MA185
Contextual Info: • Switching Diodes Line-up Surface Mount T y p e SS-Mini Type 2 Pin (D78) SS-Mini Ä , (D2| S-Mini Type (2 Pin) (D3) S-Mini Type (3 Pin) (D 5) S-Mini Type {4 Pin) (D7) S-Mini Type (6 Pin) (DIO) MA10100 Mini Type (3 Pin) (D12) Glass H o le -th ro u g h ty p e

D23C8000

Abstract: X5060 D23c8
Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT ¿¿PD23C8000L 8M-BIT MASK-PROGRAMMABLE ROM 1M-WORD BY 8-BIT BYTE MODE / 512K-WORD BY 16-BIT (WORD MODE) Description The /xPD23C8000L is a 8,388,608 bits mask-programmable ROM. The word organization is selectable (BYTE mode:

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT _ jUPD23C24020 24M-BIT MASK-PROGRAMMABLE ROM 1.5M-WORD BY 16-BIT WORD MODE Description The ¡1 PD23C24020 is a 25,165,824 bits mask-programmable ROM. The word organization is 1,572,864 words by 16 bits (WORD mode).

SOJ32-P-400-1

Abstract: 512X256X8
Contextual Info: TOSHIBA TENTATIVE TC55V8128BJI/BFTI-10,-12 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WC>RD BY 8-BIT CMOS STATIC RAM DESCRIPTION The TC55V8128BJI/BFTI is a 1,048,576 bits high speed static random access memory organized as 131,072 words by 8 bits using CMOS technology, and operated from a single 3.3V supply. Toshiba’s

Contextual Info: HM101515 Series 262,144-words x 4-bits Fully Decoded Random Access Memory Description Pin Arrangement The H M 1 0 1 5 I5 is E C L 100K com p atible, 262,144-word by 4-bit read/write random access memory developed for high speed systems such as scratch pads and control/buffer storage.

A17a

Abstract: diode A14A a43a SMA33CA A6.5CA SMA12CA a13a A45A A78A A18A marking
Contextual Info: P4SMA series Compact Technology Peak power dissipation Breakdown Voltage Transient Voltage Suppressors 400W 5.0~ 190V SMA FEATURES Constructed with Glass Passivated Die Low inductance Excellent clamping capability Uni and bidirectional unit Very fast response time

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUII / P D 2 3 C 1 6 0 0 0 A L 16M-BIT M ASK-PROGRAM MABLE ROM 2M -W ORD BY 8-BIT(BYTE MODE / 1M-W ORD BY 16-BIT(W ORD MODE) Description The ^¡PD23C16000AL is a 16,777,216 bits mask-programm able ROM. The word organization is selectable (BYTE

Contextual Info: $ $ ''*&) "0%,'0*&&"  ,2&%,'(%"+2%2*! *!0&3@73A BFAA) '@C30#<7 7<3 3/BC@3A J00*/:;=C<B0=@;/B J00#>B7=</:0BA0G3/@00/BB3@73A J00/19:7B0  %756B0*!BFAA0A3@73A =<A7ABA0=40($&0:31B@=<71 ;=2C:30;=C<B3207<0E/:01/07<3B E7B60C>0B=0E00/BB3@G0A3BA8

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT ¿¿PD23C8001EJ 8M-BIT MASK-PROGRAMMABLE ROM 1M-WORD BY 8-BIT Description The /XPD23C8001 EJ is a 8,388,608 bits 1,048,576 w ords by 8 bits m ask-program m able ROM. The active levels of OE (Output Enable Input) can be selected with m ask-option.

TPA100A

Abstract: TPA120A TPA150 TPA62A TPA68A tpa160 TPA130A
Contextual Info: SGSTHO M SON TPA SERIES TRISIL FEATURES • BIDIRECTIONAL CROWBAR PROTECTION. ■ BREAKDOWN VOLTAGE RANGE: From 62 V To 270 V. ■ HOLDING CURRENT = Ih Suffix 12 = 120mA min. Suffix 18 = 180mA min. ■ PEAK PULSE CURRENT : Ipp = 50 A, 10/1000 us. DESCRIPTION

Siemens Ferrite B64290

Abstract: Siemens Ferrite n67 RM B66206-A2010 B65931CX22 B65535-B2 B66206J1106T1 B65820-B2001 L22 RM-8 B65611T250G48 b65935ax22
Contextual Info: Ferrite und Zubehör Ferrites and Accessories Lieferprogramm 2000 / Short Form Catalog 2000 http://www.epcos.com EPCOS AG Vorwort Preview Ferrite sind unverzichtbare Schlüsselkomponenten in vielen modernen Hochleistungstechnologien. Sie finden immer neue Anwendungen in der

PR221DS sace tmax

Abstract: ABB RD2 earth leakage relay 2CSC400002D0205 mccb 60947-2 max zs ABB Sace Tmax S941N C2 60947-2 MAX EARTH LOOP IMPEDANCE BSEN 60898 R0427 50Hz to 60Hz 400v circuit diagram SQZ3
Contextual Info: Technical catalogue System pro M compact and other modular devices for low voltage installation System pro M compact® and other modular devices for low voltage installation In consideration of modifications to Standards and materials, the characteristics

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT ¿¿PD23C64040L 64M-BIT MASK-PROGRAMMABLE ROM 8M-WORD BY 8-BIT BYTE MODE / 4M-WORD BY 16-BIT(WORD MODE) PAGE ACCESS MODE Description The ^¡PD23C64040L is a 67,108,864 bits mask-programmable ROM. The word organization is selectable (BYTE

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT ¿¿PD 2 3 C 6 4 0 0 0 L 64M-BIT M ASK-PROGRAM MABLE ROM 8M -W ORD BY 8-BIT BYTE MODE / 4M -W ORD BY 16-BIT(W ORD MODE) Description The ^¡PD23C64000L is a 67,108,864 bits mask-programmable ROM. The word organization is selectable (BYTE

C945 p 331

Abstract: K4004 P331 B772 Q63100 C945 p331 K4100 63100-P2390-C995 f7101 B59335 M155 P2390
Contextual Info: Vergleichsiiste für geänderte Bestellnummern Reference List for Altered Ordering Codes Kaltleiter PTC Thermistors Typ Vorgängertyp Best.-Nr. alt Best.-Nr. neu Typ (Vorgängertyp) Best.-Nr. alt Best.-Nr. neu Type (previous type) Old ordering code New ordering code

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT ¿ P 1 D 2 C 3 8 L X 8M -B IT M ASK-PRO G RAM M A BLE ROM 1M -W O RD BY 8-B IT BYTE M O D E /512K -W O R D BY 16-BIT (W ORD MODE) Description The ¿¡PD23C8000LX is a 8,388,608 bits mask-programmable ROM. The word organization is selectable (BYTE

2CSC400002D0208

Abstract: 12v 200 ohm 1c/o relay MTME-485-SUI-LCD-96 ABB RD2 earth leakage relay ANR96 ANR96-230 LEONE RELAY 12V 20A 5v 100 ohm 1c/o relay ABB anr96 MTME-485-LCD-96
Contextual Info: In consideration of modifications to Standards and materials, the characteristics and overall dimensions indicated in this catalogue may be considered binding only following confirmation by ABB Copyright 2010 ABB. All right reserved. System pro M compact and other modular devices for low voltage installation