A14 SERIES Search Results

LN5061

Abstract: A14P Rectifier 1N5059 A14B A14B A14P diode A14B LN5060 ln5062 1N5059 1N5060
Contextual Info: Passivated Rectifier A14 SERIES 1N5059 1N5060 1N5061 1N5062 A14P TRANSIENT VOLTAGE PROTECTED 2.5 Amps 200-1000 Volts THE GENERAL ELECTRIC A14 IS A 2.5 AMPERE RATED, AXIAL-LEADED GENERAL PURPOSE RECTIFIER. DUAL HEATSINK CONSTRUCTION PRO­ VIDES RIGID MECHANICAL SUPPORT FOR THE PELLET AND EXCELLENT

in5062

Abstract: A14P
Contextual Info: 74 729 4 62 1 POWEREX INC T - °t ~i 3 tEJ7amtai naoiasi Passivated Rectifier A14 SERIES TRANSIENT VOLTAGE PROTECTED 2.5 Amps 200-1000 Volts 1N5059 1N5060 1N5061 1N5062 AMP THE GENERAL ELECTRIC A14 IS A 2.5 AMPERE RATED, AXIAL-LEADED GENERAL PURPOSE RECTIFIER. DUAL HEATSINK CONSTRUCTION PRO­

MPSA14

Abstract: mps a14 K MPS DSA0010574 equivalent mpsa14 MPSa14 equivalent
Contextual Info: SEMICONDUCTOR MARKING SPECIFICATION MPSA14 TO-92 PACKAGE 1. Marking method Laser Marking 2. Marking K MPS A14 801 No. Item Marking 1 KEC K 2 Description KEC CORP. MPS Series Name A14 Device Name Device Name 3 4 98.06.23 Lot No. Revision No : 8 Year 0 ~ 9 : 1900~1999

HM101515

Contextual Info: HM101515 Series 262,144-words x 4-bits Fully Decoded Random Access Memory Description Pin Arrangement The HM101515 is ECL 100K compatible, 262,144-word by 4-bit read/write random access memory developed for high speed systems. NC A14 A15 A16 A17 CS DIO0 VCC

Contextual Info: CBT-140 Product Datasheet Preliminary CBT-140 WhiteLEDs Features: • Extremely high optical output from a14 mm2 circular source: Up to 3,700 white lumens Table of Contents Technology Overview. . . . . . 2 Test Specifications . . . . . . . . . 2 Binning Structure. . . . . . . . . . 3

Contextual Info: CBT-140 Product Datasheet Preliminary CBT-140 White LEDs Features: • Extremely high optical output from a14 mm2 circular source: Up to 4,000 white lumens Table of Contents Technology Overview. . . . . . 2 Test Specifications . . . . . . . . . 2 Binning Structure. . . . . . . . . . 3

RCD Components

Abstract: 100NS A0805 A1405 A1410 SA08 SMA14
Contextual Info: ACTIVE DELAY LINES, 5-TAP & 10-TAP THROUGH-HOLE & SURFACE MOUNT A08 SERIES: 8-Pin DIP A14 SERIES: 14-Pin DIP SA08 SERIES: 8-Pin SIP A14 SERIES: 14-Pin SO Economical cost A1405 popular values from stock! Wide selection, 20 - 1000nS Choice of 5 or 10 equally spaced taps

SMA1405

Abstract: active
Contextual Info: ACTIVE DELAY LINES, 5-TAP & 10-TAP THROUGH-HOLE & SURFACE MOUNT A08 SERIES: 8-Pin DIP A14 SERIES: 14-Pin DIP SA08 SERIES: 8-Pin SIP A14 SERIES: 14-Pin SO Economical cost A1405 popular values from stock! Wide selection, 20 - 1000nS Choice of 5 or 10 equally spaced taps

Contextual Info: ACTIVE DELAY LINES, 5-TAP & 10-TAP THROUGH-HOLE & SURFACE MOUNT RCD A0805AG 1 50NS A08 SERIES: 8-Pin DIP A14 SERIES: 14-Pin DIP SA08 SERIES: 8-Pin SIP A14 SERIES: 14-Pin SO Economical cost A1405 popular values from stock! Wide selection, 20 - 1000nS Choice of 5 or 10 equally spaced taps

Contextual Info: HM101510 Series 1,048,576-w ord x 1-bit Random Access Mem ory The Hitachi HM101510 is ECL 100 K compatible, 1,048,576 w ords by 1 b its re a d /w rite random access memory developed for high speed systems. Pin Arrangement A15 C 1 28 □ A14 Features A16 C 2

PBSRAM

Abstract: mosys GW 66 475 ci 94086 MC80364K64 64KX64
Contextual Info: MC80364K64 Low Power 3.3V/2.5V MOSYS 64Kx64 PBSRAM • High performance, low power pipeline burst SRAM Ultra low power single chip 512Kbyte Cache for green PC and battery powered PC VSSQ - 39 N/C - 40 MODE - 41 A15 - 42 A14 - 43 A13 - 44 VDD - 45 VSS - 46

AS8E512K8

Abstract: 512KX8 5962-9309101HYA
Contextual Info: EEPROM AS8E512K8 Austin Semiconductor, Inc. 512K x 8 EEPROM PIN ASSIGNMENT EEPROM Module Top View AVAILABLE AS MILITARY SPECIFICATIONS 32-Pin DIP & 32-Pin SOJ (CW) A18 1 32 Vcc A16 2 31 WE\ A15 3 30 A17 FEATURES A12 4 29 A14 • • • • • • • •

Contextual Info: Image of case size OS-CON Line-up Guidelines and precautions Selection guide W Technical data H L Unit:mm Surface mount type (Unit:mm) S09 size A09 size A14 size B09 size B1 size B1G size B15 size B15G size L2.0xW1.25×H0.9 L3.2×W1.6×H0.9 L3.2×W1.6×H1.4

P8276

Abstract: p947
Contextual Info: 1.3 Pin Arrangement and Functions 1.3.1 Pin Arrangement P42/TMRI0/SCK2/SDA1 P43/TMCI1/HIRQ11/HSYNCI P44/TMO1/HIRQ1/HSYNCO P45/TMRI1/HIRQ12/CSYNCI P46/PWX0 P47/PWX1 VCC1 P27/A15/PW15/CBLANK P26/A14/PW14 P25/A13/PW13 P24/A12/PW12 P23/A11/PW11 P22/A10/PW10 P21/A9/PW9

P8295

Contextual Info: 1.3 Pin Arrangement and Functions 1.3.1 Pin Arrangement P42/TMRI0/SCK2/SDA1 P43/TMCI1/HIRQ11/HSYNCI P44/TMO1/HIRQ1/HSYNCO P45/TMRI1/HIRQ12/CSYNCI P46/PWX0 P47/PWX1 PB7/D7 PB6/D6 VCC1 P27/A15/PW15/CBLANK P26/A14/PW14 P25/A13/PW13 P24/A12/PW12 P23/A11/PW11 P22/A10/PW10

27pc240

Abstract: 27C240 texas instruments PC240-12 TMS27C240 TMS27PC240
Contextual Info: TMS27C240 262144 BY 16-BIT UV ERASABLE TMS27PC240 262144 BY 16-BIT PROGRAMMABLE READ-ONLY MEMORIES SMLS240D– NOVEMBER 1990 – REVISED SEPTEMBER 1997 D D D D D D D D D TMS27PC240 FN PACKAGE TOP VIEW DQ13 DQ14 DQ15 E V PP NC V CC A17 A16 A15 A14 Organization . . . 262 144 by 16 Bits

Contextual Info: Connection Diagrams 3 3 1501 11 1 2 1 1504 3 2 1 MMBD1501 MMBD1503 MMBD1504 MMBD1505 SOT-23 MARKING 11 MMBD1501A 13 MMBD1503A 14 MMBD1504A 15 MMBD1505A A11 A13 A14 A15 1 3 3 1503 2NC 1 2 3 1505 2 1 2 Small Signal Diodes Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

Contextual Info: 32K X 8 EEPROM molaic M EM832V/J-90/12/15 Issue 2.1 : May 1993 PRELIMINARY Semiconductor Inc. Pin Definitions 32,768 x 8 High Speed CMOS EEPROM Features A14 A12 A7 Afi A5 A4 A3 A2 A1 AO 00 D1 02 GNO Very Fast Access Times of 90/120/150 ns. VIL and JLCC packages available.

Contextual Info: TMS27C240 262144 BY 16ĆBIT UV ERASABLE TMS27PC240 262144 BY 16ĆBIT PROGRAMMABLE READĆONLY MEMORIES SMLS240D− NOVEMBER 1990 − REVISED SEPTEMBER 1997 D D D D D D D D D TMS27PC240 FN PACKAGE TOP VIEW DQ13 DQ14 DQ15 E V PP NC V CC A17 A16 A15 A14 Organization . . . 262 144 by 16 Bits

H8S-2398

Contextual Info: 1.2 Block Diagram Port E Peripheral data bus Port B PB7 /A15 PB6 /A14 PB5 /A13 PB4 /A12 PB3 / A11 PB2 /A10 PB1 /A9 PB0 /A8 Port C PC7 /A7 PC6 /A6 PC5 /A5 PC4 /A4 PC3 /A3 PC2 /A2 PC1 /A1 PC0 /A0 Port 3 P35 /SCK1 P34 /SCK0 P33 /RxD1 P32 /RxD0 P31 /TxD1 P30 /TxD0

A 1504

Abstract: A14 marking SOT 1505 marking MMBD1503 TA 1504 MMBD1501 MMBD1501A MMBD1503A MMBD1504 MMBD1505
Contextual Info: MMBD1501/A / 1503/A / 1504/A / 1505/A 3 CONNECTION DIAGRAMS 11 3 1 2 SOT-23 MMBD1501 MMBD1503 MMBD1504 MMBD1505 1 3 1501 2 MARKING 11 MMBD1501A 13 MMBD1503A 14 MMBD1504A 15 MMBD1505A 2 NC 1 1 1 2 1503 2 3 3 1504 A11 A13 A14 A15 3 1 1505 2 High Conductance Low Leakage Diode

Contextual Info: MOSAIC SEMICONDUCTOR IN C blE D bBSBB?^ GDD16M3 3flfl « M O C 3 2 K X 8 EEPROM molate MEM832V/J-90/12/15 Issue 2.1 : May 1993 PRELIMINARY Semiconductor Pin Definitions 32,768 x 8 High Speed CMOS EEPROM A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 DO D1 D2 GND Features

Contextual Info: OEC 7 1992 32K X 8 EEPROM molate M EM 832V/J-90/12/15 Issue 2.0 : November 1992 Semiconductor Pirt Definitions 32,768 x 8 High Speed CMOS EEPROM A14 A12 A7 A6 AS A4 A3 A2 A1 A0 DO D1 D2 GND Features Very Fast Access Times of 90/120/150 ns. VIL and JLCC packages available.

TMS62828L-12

Contextual Info: TMS62828L 1,048,576-BIT LOW-POWER STATIC RANDOM-ACCESS MEMORY JANUARY 1990 * Organization . . . 131,072 x 8 DK AND NW PACKAGES TOP VIEW * Single 5-V Power Supply (10% Tolerance) NC 0 1 L A16 C 2 A14 0 3 A12 0 4 A7 c 5 * High-Density Packaging: — Plastic 32-pin 600-Mil Duai-ln-Line