A13 MARKING TRANSISTOR Search Results

A13 MARKING CODE

Abstract: transistor a13 MARKING a13 TSC5802DCP A13 transistor a13 marking transistor diode MARKING CODE a13
Contextual Info: TSC5802D High Voltage Fast-Switching NPN Power Transistor TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCEO 450V BVCBO 1050V IC VCE(SAT) Features 2A 0.5V @ IC=0.7A, IB=0.14A Block Diagram ● High Voltage Capability

power transistor Ic 4A NPN to - 251

Abstract: HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR NPN Transistor 450v 1A transistor a13
Contextual Info: TSC5804D High Voltage Fast-Switching NPN Power Transistor TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCEO 450V BVCBO 1050V IC VCE(SAT) Features 4A 0.5V @ IC=1A, IB=0.2A Block Diagram ● High Voltage Capability

Contextual Info: TS13005CK High Voltage NPN Transistor TO-126 Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCEO 400V BVCBO 700V IC VCE SAT Features ● 3A 0.17V @ IC=1A, IB=0.25A Block Diagram No Need to Interest an hfe Value Because of Low Variable Storage-time Spread Even Though Comer

A14 marking SOT

Abstract: A13 MARKING CODE A12 marking A12n MARKING 3W SOT23 FMMT-A12 a13 marking sot23 FMMT-A13 marking code AD transistor MARKING A12n
Contextual Info: FERRANTI * semiconductors FMMT-A12 FMMT-A13 FM M T-AÎ4 NPN Silicon Darlington Transistors DESCRIPTION These NPN silicon darlington am plifier transistors o ffe r high gain and input impedance fo r pre-am plifier input applications. Encapsulated in the popular SOT-23 package these devices

Transistor A14

Abstract: MMBTA14LT1 MMBTA13LT1
Contextual Info: MMBTA13/14LT1 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR * High Current Gains * Monolithic Construction * Available in Both Through-Hole and Surface Mount Packages ABSOLUTE MAXIMUM RATINGS at Ta=25 Rating Unit Collector-Emitter Voltage Vces

Transistor A14

Abstract: a14 Transistor MMBTA13LT1 MMBTA14LT1 a13 marking transistor
Contextual Info: MMBTA13LT1/14LT1 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR * High Current Gains * Monolithic Construction * Available in Both Through-Hole and Surface Mount Packages ABSOLUTE MAXIMUM RATINGS at Ta=25 Rating Unit Collector-Emitter Voltage

Transistor MPSA13

Abstract: mpsa14
Contextual Info: MPSA13 / MPSA14 NPN DARLINGTON TRANSISTOR Features • · · High Current Gains Monolithic Construction Available in Both Through-Hole and Surface Mount Packages E A TO-92 B Mechanical Data · · · · C Case: TO-92, Molded Plastic Leads: Solderable per MIL-STD-202,

transistor a13

Abstract: MARKING WL MPSA13 MPSA14
Contextual Info: TRANSYS MPSA13 / MPSA14 ELECTRONICS NPN DARLINGTON TRANSISTOR LIMITED Features High Current Gains Monolithic Construction Available in Both Through-Hole and Surface Mount Packages TO-92 Mechanical Data_ Case: TO-92, Molded Plastic Leads: Solderable per MIL-STD-202,

mpsa14

Contextual Info: MPSA13 / MPSA14 NPN DARLINGTON TRANSISTOR POWER SEMICONDUCTOR Features • • • High Current Gains Monolithic Construction Available in Both Through-Hole and Surface Mount Packages E A TO-92 B Mechanical Data • • • • C Case: TO-92, Molded Plastic

MPSA14

Abstract: MPSA13 impsa13
Contextual Info: 3IÌB5 MPSA13 / MPSA14 NPN DARLINGTON TRANSISTOR y LITEM ZI POWER SEMICONDUCTOR Features • • • High Current Gains Monolithic Construction Available in Both Through-Hole and Surface Mount Packages « -E -* TO-92 Mechanical Data_ • • •

Contextual Info: MPSA13 / MPSA14 NPN DARLINGTON TRANSISTOR Features KM High Current Gains Monolithic Construction Available in Both Through-Hole and Surface Mount Packages TO-92 Mechanical Data_ • • • • Case: TO -92, Molded Plastic Leads: Solderable per M IL-STD-202,

A14 marking SOT

Abstract: to-92 case connections MPSA DARLINGTON MPSA13 a13 marking sot23 sot-23 body marking A 4 MARKING R1n 432 sot23 A14 SOT23-5 MMBTA13
Contextual Info: MPSA13/14 / MMBTA13/14 NPN DARLINGTON TRANSISTORS POWER SEMICONDUCTOR Features • • • MMBTA13 / MMBTA14 High Current Gains Monolithic Construction Available in Both Through-Hole and Surface Mount Packages A C TOP VIEW B C B E G E D H K Mechanical Data

MPSA14

Abstract: MPSA13
Contextual Info: MPSA13 / MPSA14 NPN DARLINGTON TRANSISTOR Features KM High Current Gains Monolithic Construction Available in Both Through-Hole and Surface Mount Packages TO-92 Mechanical Data Case: TO-92, Molded Plastic Leads: Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram

SOT23 DIODE marking CODE AV

Abstract: a15 diode 357 SOT23 marking A11 SOT-23 MARKING AV sot-23 marking a13 marking AV package sot23 diode a13 A14 marking SOT sot23 package marking AV
Contextual Info: MMBD1501A/1503A/1504A/1505A High Conductance Low Leakage Diode SOT-23 Features — Two element incorporated into one package. Emitter-coupled transistors — Reduction of the mounting area and assembly cost by one half. Applications — Dimensions in inches and (millimeters)

a15 diode

Abstract: diode MARKING CODE a13 MMBD1503A sot-23 diode marking Av SOT23 DIODE marking CODE AV SOT-23 MARKING AV SOT-23 marking BR 357 SOT23 sot-23 marking code pd sot-23 br 13
Contextual Info: High conductance low leakage diode MMBD1501A/1503A/ 1504A/1505A FEATURES z Two element incorporated into one package. Emitter-coupled transistors z MMBD1501A MMBD1503A Reduction of the mounting area and assembly cost by one half. z RoHS product for packing code suffix "G",

marking 08 sot-23

Abstract: BL SOT23 a15 diode a13 marking sot23 1504A SOT A14 marking SOT23 V 4 diode A14 marking SOT SOT23 A13 MMBD1503A
Contextual Info: BL Galaxy Electrical Production specification High conductance low leakage diode MMBD1501A/1503A/ 1504A/1505A FEATURES z Pb Two element incorporated into one package. Lead-free Emitter-coupled transistors z MMBD1501A MMBD1503A Reduction of the mounting area and

41 BF transistor

Abstract: transistor BF 235 transistor bf 254 869S transistor marking code 41 BF BF869S transistor bf 871s BF871S bf869s Transistor transistor bf 44
Contextual Info: a l TELEFUNKEN ELECTRONIC 17E D • a^EDD^b 000^427 4 ■ AL6G BF 869 S BF 871 S IN electronic Cr»«tiv« Technologies r-33-öS* Silicon NPN Epitaxial Planar RF Transistors Applications: Video-B-class power stages in TV-receivers Features: • High reverse voltage

c215a

Abstract: 1902 transistor BTNA13A3 BTNA14A3
Contextual Info: CYStech Electronics Corp. Spec. No. : C215A3 Issued Date : 2003.03.27 Revised Date : Page No. : 1/4 Gentral Purpose NPN Epitaxial Planar Transistor BTNA13A3 Description • The BTNA14A3 is a darlington amplifier transistor • Complementary to BTPA63A3. Equivalent Circuit

T3D 90

Abstract: marking abF t3d 2d Marking 3D TO-236AB TMPT4402 TMPTA70 TMPTA63 0/t3d 2d
Contextual Info: SPRAGUE/SEMICOND 8514 0 19 SPRAGUE. 13 GR OU P 6513650 S E M I C O N D S /ICS 0003L06 1 93D 03608 i> T '9.7-10 SMALL-OUTLINE BIPOLAR TRANSISTORS PNP Transistors ELECTRICAL CHARACTERISTICS at TA = 25°C DC Current Gain IcBO 25 25 60 90 40 40 30 25 40 40 50

sot-23-5 a13

Abstract: TRANSISTOR Marking XB SOT-89 a13 marking sot235 marking A13, SOT-23-5 a13 marking sot-23-5
Contextual Info: RT9261/A Preliminary VFM Step-Up DC/DC Converter General Description Features The RT9261 Series are VFM Step-up DC/DC ICs with ultra low supply current by CMOS process and suitable for use with battery-powered instruments. z The RT9261 IC consists of an oscillator, a VFM control

transistor Bc 542

Abstract: transistor BC 56 transistor bc 144 bc 147 transistor BUT 11 Transistor transistor BC 147 transistor bc 146 c 2665 transistor BUT56 FC4A
Contextual Info: 17E 1> • ô'iëO O 'lL 000*155? TELEFUNKEN ELE CTRONIC BUT 56 • BUT 56 A TTilUlFiyjlìSKiìii electronic Cr*ttve Tèehoo*og*s T*-33-f3 Silicon NPN Power Transistors Applications: Switching mode power supply Features: • In multi diffusion technique • Short switching times

HM6216255CJPI12

Abstract: HM6216255CTTI12 HM6216255HCJPI-12 HM6216255HCTTI-12 Hitachi DSA0047
Contextual Info: HM6216255HCI Series Wide Temperature Range Version 4M High Speed SRAM 256-kword x 16-bit ADE-203-1305B (Z) Rev. 2.0 Dec. 5, 2002 Description The HM6216255HCI Series is a 4-Mbit high speed static RAM organized 256-k word × 16-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed

HM6216255CTTI12

Abstract: HM6216255HCJPI-12 HM6216255HCTTI-12 HM6216255CJPI12 DSA003633
Contextual Info: HM6216255HCI Series Wide Temperature Range Version 4M High Speed SRAM 256-kword x 16-bit ADE-203-1305A (Z) Rev. 1.0 Nov. 30, 2001 Description The HM6216255HCI Series is a 4-Mbit high speed static RAM organized 256-k word × 16-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed

T3D 1N

Abstract: marking 1FF tmpt3904 TMPT2222 SPRAGUE
Contextual Info: SPRAGUE/SEMICOND GROUP 85 14 01 9 SPRAGUE. T3 D • S E M I C O N D S / ICS flS13flS0 0003^0^ S ■ 9 3 D 0 3 6 0 6 J , SMALL-OUTLINE BIPOLAR TRANSISTORS NPN Transistors ELECTRICAL CHARACTERISTICS a tT A = 25°C DC Current Gain IcBO TMPT5550 TMPT5551 TMPT6427