A10A11A12 Search Results

Sony IMX 183

Abstract: Sony sony cmos sensor imx 178 Sony imx 214 Sony ImX 252 sony cmos sensor imx 226 Sony IMX 219 CMOS Sony "IMX 219" CMOS sony IMX 322 cmos sony cmos sensor imx 185
Contextual Info: i.MX 6Solo/6DualLite Applications Processor Reference Manual Document Number: IMX6SDLRM Rev. 1, 04/2013 i.MX 6Solo/6DualLite Applications Processor Reference Manual, Rev. 1, 04/2013 2 Freescale Semiconductor, Inc. Contents Section number Title Page Chapter 1

Contextual Info: March 1994 DATA SHEET_ HM 65764 8 Kx 8 HIGH SPEED CMOS SRAM FEATURES . . . . 300 AND 600 MILS WIDTH PACKAGE . TTL COMPATIBLE INPUTS AND OUTPUTS . ASYNCHRONOUS . CAPABLE OF WITHSTANDING GREATER THAN 2000 V ELECTROSTATIC DISCHARGE

MATRA MHS HM

Contextual Info: T em ic HM 65797 MATRA MHS 256 K X 1 High Speed CMOS SRAM Introduction The HM 65797 is a high speed CMOS static RAM organized as 262, 144 x 1 bit. It is manufactured using MHS high performance CMOS technology. Easy memory expansion is provided by an active low chip

HM6289

Abstract: HM6289JP-25 HM6289JP-35 HM6289LJP-25 HM6289LJP-35 Hitachi DSA00514
Contextual Info: HM6289 Series 16384-word x 4-bit High Speed CMOS Static RAM with OE The Hitachi HM6289 is a high speed 64 k static RAM organized as 16-kword × 4-bit. It realizes high speed access time (25/35 ns) and low power consumption, employing CMOS process technology. It is most advantageous for high speed

TC5561P-55

Abstract: TC5561 TC5561J-55
Contextual Info: 65,536 WORD x 1 BIT CMOS STATIC RAM [d e s c r i p t i o n ! The TC5561P/J is a 65,536 bit high speed static random access memory organized as 65,536 words by 1 bit using CMOS technology, and operates from a single 5-volt supply. Toshiba’s high perform ance device technology provides both high speed and low power features w ith a maximum

MSM524208

Abstract: 36-SOJ
Contextual Info: J2I0031-17-Y1 ¡ 電子デバイス 作成：1998年 1月 MSM524208 ● 前回作成：1996年 8月 MSM524208 暫定 524,288-Wordx8-Bit CMOS STATIC RAM n 概要 単一電源で動

Contextual Info: MITSUBISHI LS Is SRAM MODULE MH5128AAN A-85L,-10L,-12L,-15L/ MH5128AAN A-85H,-10H,-12H,-15H 4194304-BIT (524288-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The MH5128AANA is a 4194304-bits CMOS static RAM module organized as 524288-words by 8-bits. It consists of

HM6289

Abstract: HM6289JP-25 HM6289JP-35 HM6289LJP-25 HM6289LJP-35 Hitachi DSA00311
Contextual Info: HM6289 Series 16384-word x 4-bit High Speed CMOS Static RAM with OE Description The Hitachi HM6289 is a high speed 64 k static RAM organized as 16-kword × 4-bit. It realizes high speed access time (25/35 ns) and low power consumption, employing CMOS process technology. It is most

MSM524208

Contextual Info: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株

Contextual Info: MOS LSI TMS2564, SM J2564 65,536-BIT ERASABLE PROGRAMMABLE READ-ONLY MEMORIES M A Y 1981 - • Organization . . . 8 1 9 2 X 8 • Single + 5-V Power Supply • Pin Compatible w ith Existing ROMs and EPROMs 8K, 16K, 32 K , and 64K • All Input/Outputs Fully TTL Compatible

Contextual Info: HM624256A Series 262144-word x 4-bit High Speed CMOS Static RAM The H itachi HM 624256A is a high speed 1M Static RAM organized as 256-kword x 4-bit. It realizes high speed access time 20/25/35 ns and low pow er consum ption, em ploying CMOS process technology and high speed circu it

A19N

Abstract: A7N transistor A10N A6n3 a27n1 product code a2k A23n 1A11N1 b31n transistor a7n
Contextual Info: NM6403 Software Development Kit Application Report Fast Hadamard Transform Release 2.0 Written by Vitali Kashkarov  Contents INTRODUCTION. 3

Contextual Info: HM6708A Series — Product Preview 65536-Word x 4-Blt High Speed Static RAM • FEATURES • Super Fast Access T im e . ,15/20/25ns max. • Low Power Dissipation. 400mW (typ.)