A1 SOT143 Search Results

SOT143R

Abstract: SC-61AA SOT-143R
Contextual Info: Package outline Philips Semiconductors Plastic surface mounted package; reverse pinning; 4 leads D SOT143R B E A X y HE v M A e bp w M B 3 4 Q A A1 c 2 1 Lp b1 e1 detail X 1 2 mm scale DIMENSIONS mm are the original dimensions UNIT A A1 max bp b1 c D E e

SCHOTTKY DIODE SOT-143

Abstract: Diode Marking 1e smd diode BAT74 transistor smd marking 1E BAT74
Contextual Info: BAT74 SMALL SIGNAL SCHOTTKY DIODE FEATURES AND BENEFITS VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES LOW FORWARD VOLTAGE DROP EXTREMELY FAST SWITCHING SURFACE MOUNT DEVICE A2 A1 A2 K1 K2 A1 K2 K1 DESCRIPTION Two separate Schottky barrier diodes encapsulated in a SOT-143 small SMD package.

Contextual Info: Package outline Plastic surface-mounted package; reverse pinning; 4 leads D SOT143R B E A X y HE v M A e bp w M B 3 4 Q A A1 2 c 1 Lp b1 e1 detail X 1 2 mm scale DIMENSIONS mm are the original dimensions UNIT A A1 max bp b1 c D E e e1 HE Lp Q v w y mm 1.1

Contextual Info: Package outline Plastic surface-mounted package; 4 leads SOT143B D B E A X y HE v M A e bp w M B 4 3 Q A A1 1 c 2 Lp b1 e1 detail X 1 2 mm scale DIMENSIONS mm are the original dimensions UNIT A A1 max bp b1 c D E e e1 HE Lp Q v w y mm 1.1 0.9 0.1 0.48 0.38

BAS28

Abstract: VPS05178 BAS28 JTs
Contextual Info: BAS28 Silicon Switching Diode Array 3
For high-speed switching applications
Electrical insulated diodes 4 2 1 VPS05178 4 1 3 2 EHA07008 Type Marking BAS28 JTs Pin Configuration 1 = C1 2 = C2 3 = A2 Package 4 = A1 SOT143 Maximum Ratings Parameter Symbol

A1 SOT143

Abstract: VPS05178 BAW101 EHA07008
Contextual Info: BAW101 Silicon Switching Diode Array 3
Electrically insulated high-voltage medium-speed diodes 4 2 1 VPS05178 4 1 3 2 EHA07008 Type Marking BAW101 JPs Pin Configuration 1 = C1 2 = C2 3 = A2 Package 4 = A1 SOT143 Maximum Ratings Parameter Symbol Diode reverse voltage

BAT17-07

Abstract: VPS05178
Contextual Info: BAT17-07 Silicon Schottky Diode 3
For mixer applications in the VHF / UHF range
For high-speed switching applications 4 2 1 VPS05178 4 1 3 2 EHA07008 Type Marking BAT17-07 57s Pin Configuration 1 = C1 2 = C2 3 = A2 Package 4 = A1 SOT143 Maximum Ratings

67 sot143

Abstract: 017d
Contextual Info: SOT143 A A1 B C D E F G H I J Ø MILLIMETERS MIN MAX 0.79 0.02 2.67 1.78 1.80 0.77 0.38 2.10 1.20 0.13 0.89 0.0 1.02 0.10 3.05 2.03 2.00 0.94 0.54 2.50 1.40 0.25 0.15 8.0 -015 INCHES MIN MAX 0.031 0.001 0.105 0.070 0.071 0.030 0.015 0.083 0.047 0.005 0.0035

a3 sot143

Abstract: BAR60 BAR61 VPS05178 MARKING 61s
Contextual Info: BAR60, BAR61 Silicon PIN Diodes 3
RF switch, RF attenuator for frequencies above 10 MHz 4 2 BAR60 BAR61 1 1 3 4 1 VPS05178 3 EHA07013 2 4 EHA07014 2 Type Marking Pin Configuration Package BAR60 60s 1=C1/A2/C3 2 = C2 3 = A3 4 = A1 SOT143 BAR61 61s 1=C2/C3

BAT62

Abstract: VPS05178
Contextual Info: BAT62 Silicon Schottky Diode 3
Low barrier diode for detectors up to GHz frequencies 4 2 1 VPS05178 1 4 2 3 EHA07020 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BAT62 62s Pin Configuration 1 = A1 2 = C2 3 = A2

450KW

Contextual Info: BAT 63 Silicon Schottky Diode ● Low barrier diode for mixer and detectors up to GHz frequencies Type BAT 63 Ordering Code tape and reel 1 Q62702-A1004 A1 Pin Configuration 2 3 4 C2 A2 C1 Marking Package 63 SOT-143 Maximum Ratings Parameter Symbol Values

VPS05178

Abstract: baw100
Contextual Info: BAW 100 Silicon Switching Diode Array 3 • For high-speed switching applications • Electrical insulated diodes 4 2 1 VPS05178 3 2 4 1 EHA00006 Type Marking BAW 100 JSs Pin Configuration 1 = A1 2 = A2 3 = C2 Package 4 = C1 SOT-143 Maximum Ratings Parameter

VPS05178

Abstract: bat 62 diode
Contextual Info: BAT 62 Silicon Schottky Diode 3 • Low barrier diode for detectors up to GHz frequencies 4 2 1 VPS05178 1 4 2 3 EHA07020 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BAT 62 62s Pin Configuration 1 = A1 2 = C2 3 = A2

SOT JPs

Abstract: VPS05178 EHA07008
Contextual Info: BAW 101 Silicon Switching Diode Array 3 • Electrically insulated high-voltage medium-speed diodes 4 2 1 VPS05178 4 1 3 2 EHA07008 Type Marking BAW 101 JPs Pin Configuration 1 = C1 2 = C2 3 = A2 Package 4 = A1 SOT-143 Maximum Ratings Parameter Symbol Diode reverse voltage

MAX8111

Abstract: MAX811
Contextual Info: 19-0411; Rev 0; 6/95 A1/XIA1 4-P/f» fiP Voltage M onitors w ith M anual R eset Input _Features ♦ Precision Monitoring of 3V, 3.3V, and 5V Power-Supply Voltages These devices perform a single function: They assert a reset signal whenever the V cc supply voltage falls

VPS05178

Contextual Info: BAT 17-07 Silicon Schottky Diode 3 • For mixer applications in the VHF / UHF range • For high-speed switching applications 4 2 1 VPS05178 4 1 3 2 EHA07008 Type Marking BAT 17-07 57s Pin Configuration 1 = C1 2 = C2 3 = A2 Package 4 = A1 SOT-143 Maximum Ratings

Field-Effect Transistors

Abstract: SOT54variant diodes PACKAGE
Contextual Info: DISCRETE SEMICONDUCTORS Package outlines Small-signal Field-effect Transistors and Diodes 1999 May 11 PACKAGE INFORMATION Page SOD68 . SOD110 . SOD323 . SOD523 . SOT23 . SOT54 . SOT54variant . SOT143B . SOT143R . SOT323 . SOT343N

BF1108_BF1108R

Abstract: BF1108_1108R_3 MARKING CODE CGK BF1108 BF1108R
Contextual Info: BF1108; BF1108R Silicon RF switches Rev. 04 — 29 May 2008 Product data sheet 1. Product profile 1.1 General description These switches are a combination of a depletion type Field-Effect Transistor FET and a band-switching diode in an SOT143B (BF1108) or SOT143R (BF1108R) package. The

8240116

Contextual Info: Specification for release Customer : Ordercode: Description: Package: 8240116 TVS Diode Array WE-TVS SOT143-4L DATUM / DATE : 2010-01-27 A Features: B Schematic and Pin Configuration: • ESD Protection for 2 high-speed I/O channels and VDD • Provide ESD protection for each channel to

diode W03

Contextual Info: Specification for release Customer : Ordercode: Description: Package: 8240026 TVS Diode Array WE-TVS SOT143-4L DATUM / DATE : 2010-01-27 A Features: B Schematic and Pin Configuration: • ESD Protection for 2 high-speed I/O channels and VDD • Provide ESD protection for each channel to

sot143 marking code 5a

Abstract: SOT143-4 marking 5a TVS SOT143 SOT-143-4 SOT143-4L
Contextual Info: Specification for release Customer : Ordercode: Description: Package: 8240136 TVS Diode Array WE-TVS SOT143-4L DATUM / DATE : 2010-01-27 A Features: B Schematic and Pin Configuration: • ESD Protection for 2 high-speed I/O channels and VDD • Provide ESD protection for each channel to

TRANSISTOR L2

Abstract: transistor bf 194 E C B
Contextual Info: BFG325/XR NPN 14 GHz wideband transistor Rev. 01 — 2 February 2005 Product data sheet 1. Product profile 1.1 General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143R plastic package. 1.2 Features • ■ ■ ■ High power gain

transistor l2

Contextual Info: BFG310/XR NPN 14 GHz wideband transistor Rev. 01 — 2 February 2005 Product data sheet 1. Product profile 1.1 General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143R plastic package. 1.2 Features • ■ ■ ■ High power gain

Contextual Info: BFG310/XR NPN 14 GHz wideband transistor Rev. 2 — 15 September 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143R plastic package. 1.2 Features and benefits   