A1 MOSFET SOT23 Search Results

TSSOP-28

Abstract: 1003 Mosfet
Contextual Info: Power MOSFET Packaging Information SO-8 E 1 E1 2 D c A ALL LEADS A1 b e L Q Dim Millimeters Min Max Inches Min Max A A1 b c D E E1 e L 1.35 1.75 0.10 0.20 0.38 0.51 0.19 0.23 4.80 5.00 3.80 4.00 5.80 6.20 1.27 BSC 0.50 0.93 0.053 0.069 0.004 0.008 0.015 0.020

Si2301DS-T1

Abstract: SI2301DS A1 marking code
Contextual Info: Si2301DS Vishay Siliconix P-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS V - 20 rDS(on) (W) ID (A) 0.130 @ VGS = - 4.5 V - 2.3 0.190 @ VGS = - 2.5 V - 1.9 TO-236 (SOT-23) G 1 3 S D Ordering Information: Si2301DS-T1 2 Top View Si2301DS (A1)* *Marking Code

SI2301DS

Abstract: Si2301DS-T1 70627
Contextual Info: Si2301DS Vishay Siliconix P-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS V - 20 rDS(on) (W) ID (A) 0.130 @ VGS = - 4.5 V - 2.3 0.190 @ VGS = - 2.5 V - 1.9 TO-236 (SOT-23) G 1 3 S D Ordering Information: Si2301DS-T1 2 Top View Si2301DS (A1)* *Marking Code

Contextual Info: Si2301DS Vishay Siliconix P-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS V - 20 rDS(on) (W) ID (A) 0.130 @ VGS = - 4.5 V - 2.3 0.190 @ VGS = - 2.5 V - 1.9 TO-236 (SOT-23) G 1 3 S D Ordering Information: Si2301DS-T1 2 Top View Si2301DS (A1)* *Marking Code

VNLR02

Abstract: A1 marking code Si2302DS na4a S-51353
Contextual Info: Si2302DS N-Channel 1.25-W, 2.5-V Rated MOSFET Product Summary VDS V 20 rDS(on) (W) ID (A) 0.085 @ VGS = 4.5 V 2.8 0.115 @ VGS = 2.5 V 2.4 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2302DS (A1)* *Marking Code Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)

Si2301DS

Contextual Info: Si2301DS Siliconix P-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS V –20 RDS(ON) (W) ID (A) 0.130 @ VGS = –4.5 V –2.3 0.190 @ VGS = –2.5 V –1.9 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2301DS (A1)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Si2301DS

Abstract: vishaysiliconix
Contextual Info: Si2301DS Siliconix P-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS V –20 RDS(ON) (W) ID (A) 0.130 @ VGS = –4.5 V –2.3 0.190 @ VGS = –2.5 V –1.9 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2301DS (A1)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Si2302DS

Contextual Info: Si2302DS N-Channel 1.25-W, 2.5-V Rated MOSFET Product Summary VDS V 20 rDS(on) (W) ID (A) 0.085 @ VGS = 4.5 V 2.8 0.115 @ VGS = 2.5 V 2.4 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2302DS (A1)* *Marking Code Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)

SI2301DS

Abstract: S5135
Contextual Info: Si2301DS P-Channel 1.25-W, 2.5-V Rated MOSFET Product Summary VDS V –12 rDS(on) (W) ID (A) 0.130 @ VGS = –4.5 V –2.3 0.190 @ VGS = –2.5 V –1.9 TO-236 (SOT-23) G 1 S 2 3 D Top View Si2301DS (A1)* *Marking Code Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)

BM2301

Abstract: SI2301DS
Contextual Info: BM2301 P-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS V –20 rDS(on) (W) ID (A) 0.130 @ VGS = –4.5 V –2.3 0.190 @ VGS = –2.5 V –1.9 TO-236 (SOT-23) G 1 S 2 3 D Top View Si2301DS (A1)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

SI2301DS

Contextual Info: Si2301DS P-Channel 1.25-W, 2.5-V Rated MOSFET Product Summary VDS V –12 rDS(on) (W) ID (A) 0.130 @ VGS = –4.5 V –2.3 0.190 @ VGS = –2.5 V –1.9 TO-236 (SOT-23) G 1 S 2 3 D Top View Si2301DS (A1)* *Marking Code Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)

SI2301DS

Contextual Info: Si2301DS Vishay Siliconix P-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS V –20 rDS(on) (W) ID (A) 0.130 @ VGS = –4.5 V –2.3 0.190 @ VGS = –2.5 V –1.9 TO-236 (SOT-23) G 1 S 2 3 D Top View Si2301DS (A1)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Contextual Info: Si2301ADS New Product Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY rDS(on) (W) ID (A)b 0.130 @ VGS = –4.5 V –2.0 0.190 @ VGS = –2.5 V –1.6 VDS (V) –20 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2301DS (A1)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

RO SOT23-5

Contextual Info: ADVANCE INFORMATION A1/XIA1 All Inform ation in this d a ta sheet is prelim inary a nd su b je c t to change. a/97 Low-Noise9 Low-Dropout, 150mA Linear Regulators in SOT-23 T he M A X 8 8 6 7 /M A X 8 8 6 8 u se an in te rn a l P -ch a n n e l MOSFET pass transistor, w hich keeps the su p p ly cu r­

BF1107

Abstract: BF1107W
Contextual Info: BF1107 N-channel single gate MOSFET Rev. 04 — 9 January 2007 Product data sheet 1. Product profile 1.1 General description The BF1107 is a depletion type field-effect transistor in a SOT23 package. The low loss and high isolation capabilities of this MOSFET provide excellent RF switching functions.

Mosfet

Abstract: SSF3324 MOSFET N-Channel 1a vgs 1.2v sot-23
Contextual Info: SSF3324 30V N-Channel MOSFET Main Product Characteristics VDSS 30V RDS on 26.5mohm(typ.) ID 5.8A ① SOT23 Marking and Pin Schematic Diagram Assignment Features and Benefits   Advanced trench MOSFET process technology Special designed for PWM, load switching and

Contextual Info: Datasheet N-Channel Enhancement Mode MOSFET Features TDM2302 Pin Description 20V/5A , RDS ON =20mΩ(typ.) @ VGS =4.5V RDS(ON) =40mΩ(typ.) @ VGS =2.5V Top View of SOT23-3L Super High Dense Cell Design Reliable and Rugged Lead Free Available (RoHS Compliant)

Contextual Info: Datasheet P-Channel Enhancement Mode MOSFET Features z TDM2301 Pin Description -20V/-3A , RDS ON =72mΩ(typ.) @ VGS=-4.5V RDS(ON)=98mΩ(typ.) @ VGS=-2.5V z Super High Dense Cell Design z Reliable and Rugged z Lead Free Available (RoHS Compliant) Top View of SOT23-3L

Contextual Info: STT5PF20V P-CHANNEL 20V - 0.075Ω - 3.2A SOT23-6L 2.5V-DRIVE STripFET POWER MOSFET TARGET DATA TYPE STT5PF20V • ■ ■ ■ VDSS RDS on ID 20 V < .085 Ω (@4.5V) < 0.10 Ω (@2.5V) 3.2 A TYPICAL RDS(on) = 0.075Ω (@4.5V) TYPICAL RDS(on) = 0.090Ω (@2.5V)

Contextual Info: Datasheet P-Channel Enhancement Mode MOSFET Features z TDM2305 Pin Description -20V/-3.5A , RDS ON =60mΩ(typ.) @ VGS =-4.5V RDS(ON) =70mΩ(typ.) @ VGS =-2.5V R =83mΩ(typ.) @ V DS(ON) z GS =-1.8V Super High Dense Cell Design Top View of SOT23-3L z Reliable and Rugged

Mosfet

Abstract: SSF2418E 2418E
Contextual Info: SSF2418E 20V Dual N-Channel MOSFET Main Product Characteristics VDSS 20V RDS on 18mohm(typ.) ID 6A SOT23-6 Features and Benefits   Marking and Pin Schematic Diagram Assignment Advanced trench MOSFET process technology Special designed for PWM, load switching and

JESD97

Abstract: STT2PF60L drive motor 60v with transistor P channel MOSFET marking code 10 sot23 o811 stp6
Contextual Info: STT2PF60L P-CHANNEL 60V - 0.20Ω - 2A - SOT-23-6L STripFET II Power MOSFET General features Type VDSS RDS on ID STT2PF60L 60V < 0.25Ω 2A • Standard outline for easy automated surface mount assembly ■ Low threshlod drive SOT23-6L Description This Power MOSFET is the latest development of

MAX5048AATT-T

Abstract: MAX5048 MAX5048AAUT MAX5048AAUT-T MAX5048BATT-T MAX5048BAUT-T SOT23-6 DC-DC
Contextual Info: 19-2419; Rev 4; 7/05 7.6A, 12ns, SOT23/TDFN, MOSFET Driver Features The MAX5048A/MAX5048B are high-speed MOSFET drivers capable of sinking/sourcing 7.6A/1.3A peak currents. These devices take logic input signals and drive a large external MOSFET. The MAX5048A/MAX5048B

Contextual Info: 19-2419; Rev 4; 7/05 7.6A, 12ns, SOT23/TDFN, MOSFET Driver The MAX5048A/MAX5048B are high-speed MOSFET drivers capable of sinking/sourcing 7.6A/1.3A peak currents. These devices take logic input signals and drive a large external MOSFET. The MAX5048A/MAX5048B