A1 MARKING CODE AMPLIFIER Search Results

DSC8505

Contextual Info: DSC8505 Tentative Total pages page DSC8505 Silicon NPN epitaxial planar type For Low-frequency amplifier Marking Symbol : 5G Package Code : MT-2-A1-B Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)

DSA4001

Abstract: a1r marking Marking a1s
Contextual Info: Tentative DSA4001 Total pages page DSA4001 Silicon PNP epitaxial planar type For general amplifier Marking Symbol : A1 Package Code : NS-B1-B-B Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)

DSC8Q01

Contextual Info: DSC8Q01 Tentative Total pages page DSC8Q01 Silicon NPN epitaxial planar dalington type For Low-frequency amplifier Marking Symbol : 5K Package Code : MT-2-A1-B Internal Connection C Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open

DSC8102

Contextual Info: DSC8102 Tentative Total pages page DSC8102 Silicon NPN epitaxial planar type For Low-frequency amplifier Marking Symbol : 5D Package Code : MT-2-A1-B Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)

A1 marking code amplifier

Abstract: marking A1 TRANSISTOR HJ669A Y2MARKING
Contextual Info: HI-SINCERITY Spec. No. : HE6830 Issued Date : 1994.01.25 Revised Date : 2004.09.23 Page No. : 1/3 MICROELECTRONICS CORP. HJ669A NPN EPITAXIAL PLANAR TRANSISTOR Description The HJ669A is designed for low frequency power amplifier. TO-252 Absolute Maximum Ratings TA=25°C

marking A1 TRANSISTOR

Abstract: HJ667A Y2 MARKING a5 marking
Contextual Info: HI-SINCERITY Spec. No. : HE6830 Issued Date : 1994.01.25 Revised Date : 2005.07.14 Page No. : 1/3 MICROELECTRONICS CORP. HJ667A PNP EPITAXIAL PLANAR TRANSISTOR Description The HJ667A is designed for low frequency power amplifier. TO-252 Absolute Maximum Ratings TA=25°C

Contextual Info: BC546…BC550A/B/C NPN Transistor TO-92 Small Signal Product Features ◇For switching and AF amplifier applications ◇These types are subdivided into three groups A, B and C according to their current gain ◇Moisture sensitivity level 1 ◇Driver transistor

Contextual Info: HI-SINCERITY Spec. No. : HE9012 Issued Date : 1996.04.12 Revised Date : 2005.07.13 Page No. : 1/4 MICROELECTRONICS CORP. HI340 NPN EPITAXIAL PLANAR TRANSISTOR Description The HI340 is designed for line operated audio output amplifier, switchmode power supply drivers and other switching applications.

HSB857J

Abstract: a5 marking
Contextual Info: HI-SINCERITY Spec. No. : HJ200101 Issued Date : 2001.09.01 Revised Date : 2005.07.14 Page No. : 1/4 MICROELECTRONICS CORP. HSB857J PNP EPITAXIAL PLANAR TRANSISTOR Description Low frequency power amplifier. TO-252 Absolute Maximum Ratings TA=25°C • Maximum Temperatures

marking code k1

Abstract: A1 marking code amplifier marking A1 TRANSISTOR HI350 transistor mark code H1
Contextual Info: HI-SINCERITY Spec. No. : HE9008 Issued Date : 1996.04.12 Revised Date : 2005.07.13 Page No. : 1/4 MICROELECTRONICS CORP. HI350 PNP EPITAXIAL PLANAR TRANSISTOR Description The HI350 is designed for line operated audio output amplifier, switch mode power supply drivers and other switching applications.

transistor mark code H1

Abstract: A1 marking code amplifier HI649A y2 marking marking Y1 transistor
Contextual Info: HI-SINCERITY Spec. No. : HE9003 Issued Date : 1998.01.25 Revised Date : 2005.07.13 Page No. : 1/4 MICROELECTRONICS CORP. HI649A PNP EPITAXIAL PLANAR TRANSISTOR Description The HI649A is designed for low frequency power amplifier. TO-251 Absolute Maximum Ratings TA=25°C

A1 marking code amplifier

Abstract: HJ117
Contextual Info: HI-SINCERITY Spec. No. : HE6031 Issued Date : 1998.02.01 Revised Date : 2005.07.14 Page No. : 1/4 MICROELECTRONICS CORP. HJ117 PNP EPITAXIAL PLANAR TRANSISTOR Description TO-252 The HJ117 is designed for use in general purpose amplifier and low-speed switching applications.

Contextual Info: HI-SINCERITY Spec. No. : HE6001 Issued Date : 1996.02.26 Revised Date : 2005.07.14 Page No. : 1/4 MICROELECTRONICS CORP. HJ31C NPN EPITAXIAL PLANAR TRANSISTOR Description The HJ31C is designed for use in general purpose amplifier and switching applications.

HE9013

Abstract: HI42C MARK Y1 Transistor
Contextual Info: HI-SINCERITY Spec. No. : HE9013 Issued Date : 1996.04.12 Revised Date : 2005.07.13 Page No. : 1/4 MICROELECTRONICS CORP. HI42C PNP EPITAXIAL PLANAR TRANSISTOR Description The HI42C is designed for use in general purpose amplifier, low speed switching applications.

Contextual Info: HI-SINCERITY Spec. No. : HE6002 Issued Date : 1994.03.02 Revised Date : 2005.07.14 Page No. : 1/4 MICROELECTRONICS CORP. HJ32C PNP EPITAXIAL PLANAR TRANSISTOR Description The HJ32C is designed for use in general purpose amplifier and low speed switching applications.

HJ41C

Abstract: Y2 MARKING marking Y1 transistor
Contextual Info: HI-SINCERITY Spec. No. : HE6010 Issued Date : 1996.02.14 Revised Date : 2005.07.14 Page No. : 1/4 MICROELECTRONICS CORP. HJ41C NPN EPITAXIAL PLANAR TRANSISTOR Description The HJ41C is designed for use in general purpose amplifier and switching applications.

HI3669

Abstract: ic k1
Contextual Info: HI-SINCERITY Spec. No. : HE9029 Issued Date : 1997.11.14 Revised Date : 2005.07.13 Page No. : 1/4 MICROELECTRONICS CORP. HI3669 NPN EPITAXIAL PLANAR TRANSISTOR Description The HI3669 is designed for using in power amplifier applications, power switching application.

y2 marking

Abstract: A1 marking code amplifier HJ3669 a5 marking
Contextual Info: HI-SINCERITY Spec. No. : HE6029 Issued Date : 1997.10.24 Revised Date : 2005.07.14 Page No. : 1/4 MICROELECTRONICS CORP. HJ3669 NPN EPITAXIAL PLANAR TRANSISTOR Description The HJ3669 is designed for using in power amplifier applications, power switching application.

Contextual Info: HI-SINCERITY Spec. No. : HE9004 Issued Date : 1998.01.25 Revised Date : 2005.07.13 Page No. : 1/4 MICROELECTRONICS CORP. HI669A NPN EPITAXIAL PLANAR TRANSISTOR Description The HI669A is designed for low frequency power amplifier. TO-251 Absolute Maximum Ratings TA=25°C

Contextual Info: HI-SINCERITY Spec. No. : HE9001 Issued Date : 1996.02.28 Revised Date : 2005.07.13 Page No. : 1/4 MICROELECTRONICS CORP. HI31C NPN EPITAXIAL PLANAR TRANSISTOR Description The HI31C is designed for use in general purpose amplifier and switching applications.

Contextual Info: HI-SINCERITY Spec. No. : HE9002 Issued Date : 1994.03.02 Revised Date : 2005.07.13 Page No. : 1/4 MICROELECTRONICS CORP. HI32C PNP EPITAXIAL PLANAR TRANSISTOR Description The HI32C is designed for use in general purpose amplifier and low speed switching applications.

A1 marking code amplifier

Abstract: HJ42C
Contextual Info: HI-SINCERITY Spec. No. : HE6013 Issued Date : 1996.04.12 Revised Date : 2005.07.14 Page No. : 1/4 MICROELECTRONICS CORP. HJ42C PNP EPITAXIAL PLANAR TRANSISTOR Description The HJ42C is designed for use in general purpose amplifier, low speed switching applications.

transistor mark code H1

Abstract: HI10387 A1 marking code amplifier
Contextual Info: HI-SINCERITY Spec. No. : HE9028 Issued Date : 1994.01.25 Revised Date : 2004.07.13 Page No. : 1/4 MICROELECTRONICS CORP. HI10387 NPN EPITAXIAL PLANAR TRANSISTOR Description The HI10387 is designed for general-purpose amplifier and low-speed switching applications.

transistor mark code H1

Abstract: HI669A
Contextual Info: HI-SINCERITY Spec. No. : HE9004 Issued Date : 1998.01.25 Revised Date : 2006.12.06 Page No. : 1/4 MICROELECTRONICS CORP. HI669A NPN EPITAXIAL PLANAR TRANSISTOR Description The HI669A is designed for low frequency power amplifier. TO-251 Absolute Maximum Ratings TA=25°C