A1 220A Search Results

Contextual Info: STPS2045C Power Schottky rectifier Features • Very small conduction losses ■ Negligible switching losses ■ Extremely fast switching ■ Insulated package: TO-220FPAB Insulating voltage = 2000 V DC Capacitance = 12 pF ■ A1 K A2 A2 A1 K A1 TO-220AB STPS2045CT

STPS2045CT 018

Abstract: stps2045c
Contextual Info: STPS2045C Power Schottky rectifier Datasheet  production data Features A1 K • Very small conduction losses A2  Negligible switching losses  Extremely fast switching A2 A1 K K A2 A1 TO-220AB STPS2045CT I2PAK STPS2045CR A2 TO-220FPAB STPS2045CFP  Avalanche rated

Contextual Info: STPS50U100C Ultralow forward voltage power Schottky rectifier Features A1 • Ultralow forward voltage drop ■ High current capability ■ High frequency operation ■ ECOPACK 2 compliant components K A2 A2 Description A1 K A2 A1 TO-220AB STPS50U100CT The STPS50U100C is a dual power Schottky

Contextual Info: STTH1002C HIGH EFFICIENCY ULTRAFAST DIODE MAIN PRODUCT CHARACTERISTICS IF AV Up to 2 x 8A A1 VRRM 200 V A2 Tj (max) 175 °C VF (typ) 0.78 V trr (typ) 20 ns K A2 FEATURES AND BENEFITS • ■ ■ ■ ■ ■ A1 A2 K A1 I2PAK STTH1002CR TO-220AB STTH1002CT

BB2L

Abstract: STTH1002CFP stth1002ct STTH1002CB
Contextual Info: STTH1002C HIGH EFFICIENCY ULTRAFAST DIODE MAIN PRODUCT CHARACTERISTICS IF AV Up to 2 x 8A A1 VRRM 200 V A2 Tj (max) 175 °C VF (typ) 0.78 V trr (typ) 20 ns K A2 • ■ ■ ■ ■ ■ A2 K FEATURES AND BENEFITS K A1 A1 I2PAK STTH1002CR TO-220AB STTH1002CT

A2 diode

Abstract: STPR1020CT STPR1020CB STPR1020CB-TR STPR1020CF STPR1020CFP STPR1020CG STPR1020CR diode k 0368
Contextual Info: STPR1020CB/CG/CT/CF/CFP/CR  ULTRA-FAST RECOVERY RECTIFIER DIODES A1 MAIN PRODUCTS CHARACTERISTICS K IF AV 2x5A VRRM 200 V Tj (max) 150°C VF (max) 0.99 V trr (max) A2 A2 A1 30 ns • ■ ■ ■ ■ K A1 TO-220AB STPR1020CT FEATURES SUITED FOR SMPS LOW LOSSES

STTH1002CG-TR

Abstract: STTH1002CT STTH1002CR STTH1002C STTH1002CB STTH1002CB-TR STTH1002CFP STTH1002CG
Contextual Info: STTH1002C HIGH EFFICIENCY ULTRAFAST DIODE MAIN PRODUCT CHARACTERISTICS IF AV Up to 2 x 8A A1 VRRM 200 V A2 Tj (max) 175 °C VF (typ) 0.78 V trr (typ) 20 ns K A2 • ■ ■ ■ ■ ■ A2 K FEATURES AND BENEFITS K A1 A1 I2PAK STTH1002CR TO-220AB STTH1002CT

TRIAC BTB 16 600 BW

Abstract: triacs bt 16 600v TRIAC BTA24 TRIAC BTB 12 600 B ac motor triac bta25 TRIAC BTA 28 TRIAC BTB T25 TRIAC BTa 12 600 BW application note TRIAC BTa 16 600 BW application note RD91 package
Contextual Info: BTA24, BTB24, BTA25, BTA26 and T25 series Snuberrless and Standard 25 A Triacs Main features A2 Symbol Value Unit IT RMS 25 A VDRM/VRRM 600 and 800 V IGT (Q1) 35 to 50 mA G A1 A2 A1 A2 G Description A1 A2 G TO-220AB Insulated (BTA24) Available either in through-hole or surface-mount

STPR10*0CT

Abstract: STPR1020CT STPR1020CB STPR1020CB-TR STPR1020CF STPR1020CFP STPR1020CG STPR1020CR
Contextual Info: STPR1020CB/CG/CT/CF/CFP/CR  ULTRA-FAST RECOVERY RECTIFIER DIODES A1 MAIN PRODUCTS CHARACTERISTICS K IF AV 2x5A VRRM 200 V Tj (max) 150°C VF (max) 0.99 V trr (max) A2 A2 A1 30 ns n n n n n A1 TO-220AB STPR1020CT FEATURES SUITED FOR SMPS LOW LOSSES LOW FORWARD AND REVERSE RECOVERY

ac motor triac bta24

Abstract: bta25 TRIAC BTB 12 600 B marking tm T25 Series
Contextual Info: BTA24, BTB24, BTA25, BTA26 and T25 series Snuberrless and Standard 25 A Triacs Main features A2 Symbol Value Unit IT RMS 25 A VDRM/VRRM 600 and 800 V IGT (Q1) 35 to 50 mA G A1 A2 A1 A2 G Description A1 A2 G TO-220AB Insulated (BTA24) Available either in through-hole or surface-mount

STPS2045C

Abstract: STPS2045CFP STPS2045CT 018 0107L c 3506 06 STPS2045CG STPS2045CG-TR STPS2045CR STPS2045CT
Contextual Info: STPS2045C Power Schottky rectifier Features A1 • Very small conduction losses A2 ■ Negligible switching losses ■ Extremely fast switching ■ Insulated package: TO-220FPAB Insulating voltage = 2000 V DC Capacitance = 12 pF ■ K A2 A1 K K TO-220AB STPS2045CT

Contextual Info: STPSC16H065C 650 V power Schottky silicon carbide diode Datasheet - production data Description A1 K A2 A2 A1 K TO-220AB STPSC16H065CT The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band-gap material

Contextual Info: STPSC12H065C 650 V power Schottky silicon carbide diode Datasheet - production data Description A1 K A2 A2 A1 K TO-220AB STPSC12H065CT The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material

Contextual Info: STPSC16H065C 650 V power Schottky silicon carbide diode Datasheet - production data Description A1 K A2 A2 A1 K TO-220AB STPSC16H065CT The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band-gap material

Contextual Info: STPS20L60CT POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS A1 IF AV 2 x 10 A VRRM 60 V Tj (max) 150 °C VF (max) 0.56 V K A2 FEATURES AND BENEFITS A2 LOW FORWARD VOLTAGE DROP NEGLIGIBLE SWITCHING LOSSES LOW THERMAL RESISTANCE A1 K TO-220AB DESCRIPTION

triac ST T4 1060

Abstract: ST T4 1060 A1A2G Triac T435 T410-xxxW T435-XXXH T405-XXXW T435 70 T405 T410
Contextual Info: T4 Series 4A TRIACS SNUBBERLESS & LOGIC LEVEL MAIN FEATURES: A2 Symbol Value Unit IT RMS 4 A VDRM/VRRM 600 to 800 V IGTT (Q1) 5 to 35 G A1 A2 A2 mA A1 A2 G A1 A2 G DPAK (T4-B) DESCRIPTION Based on ST’s Snubberless / Logic level technology providing high commutation performances, the

diode marking H2

Abstract: stps20l60ct
Contextual Info: STPS20L60CT POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS A1 IF AV 2 x 10 A VRRM 60 V Tj (max) 150 °C VF (max) 0.56 V K A2 FEATURES AND BENEFITS A2 LOW FORWARD VOLTAGE DROP NEGLIGIBLE SWITCHING LOSSES LOW THERMAL RESISTANCE A1 K TO-220AB DESCRIPTION

triac ST T4 1060

Abstract: ST T4 1060 T435-XXXH A1A2G triac ST T4 1060 c T4xx-yyyH Triac T435 T405 T410 T435
Contextual Info: T4 Series 4A TRIACS SNUBBERLESS & LOGIC LEVEL MAIN FEATURES: A2 Symbol Value Unit IT RMS 4 A VDRM/VRRM 600 to 800 V IGTT (Q1) 5 to 35 G A1 A2 A2 mA A1 A2 G A1 A2 G DPAK (T4-B) DESCRIPTION Based on ST’s Snubberless / Logic level technology providing high commutation performances, the

Contextual Info: STPSC20H065C 650 V power Schottky silicon carbide diode Datasheet - production data Description A1 1 K (2) A2 (3) A2 A1 K TO-220AB STPSC20H065CT The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material

stps20l60ct

Abstract: STPS20
Contextual Info: STPS20L60CT POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS A1 IF AV 2 x 10 A VRRM 60 V Tj (max) 150 °C VF (max) 0.56 V K A2 FEATURES AND BENEFITS A2 LOW FORWARD VOLTAGE DROP NEGLIGIBLE SWITCHING LOSSES LOW THERMAL RESISTANCE A1 K TO-220AB DESCRIPTION

stps20l60ct

Contextual Info: STPS20L60CT  POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS A1 IF AV 2 x 10 A VRRM 60 V Tj (max) VF (max) 150 °C 0.56 V K A2 FEATURES AND BENEFITS A2 LOW FORWARD VOLTAGE DROP NEGLIGIBLESWITCHING LOSSES LOW THERMAL RESISTANCE A1 K TO-220AB DESCRIPTION

STPS20L40CW

Abstract: STPS20L40CF STPS20L40CT 247 DIODE schottky
Contextual Info: STPS20L40CF/CW/CT  LOW DROP POWER SCHOTTKY RECTIFIER MAJOR PRODUCTS CHARACTERISTICS IF AV 2 x 10 A VRRM 40 V Tj (max) 150°C VF (max) 0.5 V A1 K A2 A2 A1 K TO-220AB STPS20L40CT FEATURES AND BENEFITS LOW FORWARD VOLTAGE DROP MEANING VERY SMALL CONDUCTION LOSSES

BYT16P-400

Abstract: BYT16P400 BYT16P
Contextual Info: BYT16P-400 FAST RECOVERY RECTIFIER DIODES MAIN PRODUCT CHARACTERISTICS A1 IF AV 16 A VRRM 400 V VF (max) 1.4 V trr (max) 35 ns K A2 K FEATURES AND BENEFITS VERY LOW REVERSE RECOVERY TIME VERY LOW SWITCHING LOSSES LOW NOISE TURN-OFF SWITCHING A1 K A2 TO-220AB

TYN12

Contextual Info: TN1215, TS1220, TYN612, TYN812, TYN1012 Sensitive and standard 12 A SCRs Description A K G A2 G TO-220AB Insulated A2 A1 A1 A2 D²PAK G Available either in sensitive TS1220 or standard (TN1215 / TYNX12) gate triggering levels, the 12A SCR series is suitable to fit all modes of