A09 MARKING Search Results

marking H1

Abstract: MARKING P98 marking TPl p104
Contextual Info: Image of case size Tantalum Solid Capacitors with Conductive Polymer Unit:mm S09 Selection guide size POSCAP Line-up Image of case size Products list Explanation of part numbers Packing specifications Selection guide Series system diagram A09 size size

5502M

Abstract: 5502-M
Contextual Info: Packing specifications *We supply only embossed taping type. Dimension of carrier tape E Component compartment J Polarity D Sprocket hole (–) B C A F G H Direction of unreeling Size code A ±0.1 B ±0.1 S09 1.65 S11 1.65 A09 (unit:mm) C ±0.3 D ±0.1 E ±0.1

marking code d2e

Abstract: marking code 27
Contextual Info: Recommended land pattern dimension Tantalum Solid Capacitors with Conductive Polymer Except for TPL/TPLF series unit:mm a b c S09 1.0 0.9 0.6 S11 1.0 0.9 0.6 A09 1.6 1.2 1.2 B09 1.6 2.7 1.4 B1 1.6 2.7 1.4 B1G 1.6 2.7 1.4 B15G 1.6 2.7 1.4 B2 1.6 2.7 1.4 B2S

marking s11

Abstract: TPSF capacitors TPC D425 TPL 250
Contextual Info: Products list Tantalum Solid Capacitors with Conductive Polymer Case size S09 S11 A09 B09 B1 B1G B15G B2 B2S C1 C2 C3 C D2E L 2.0 2.0 3.2 3.5 3.5 3.5 3.5 3.5 3.5 6.0 6.0 6.0 6.0 7.3 7.3 W 1.25 1.25 1.6 2.8 2.8 2.8 2.8 2.8 2.8 3.2 3.2 3.2 3.2 4.3 H 0.9 1.1

PFR 215 N

Abstract: 60v 9A 185-PFRA 250-PFRA
Contextual Info: PFRA Polymeric PTC Resettable Fuse - Radial Leaded A0 10 PFR A0 PFR 17 A PFR 020 A PFR 025 A PFR 030 A PFR 040 A PFR 050 A PFR 065 A PFR 075 A PFR 090 -0- A09 009 0 PFR A PFR 110 A PFR 135 A PFR 160 A PFR 185 A 25 0 2 5 0 , -0PFR 010 A PFR 300 A PFR 400 A

marking u6

Abstract: marking U7 MARK A7 Marking N8 tantalum A8 TPSF marking s11 marking Y6 TPf series
Contextual Info: Marking ●C2, C3, D2E, D3L size TPB, TPE, TPF series ●D4, D4D size (TPD, TPE series) Rated capacitance 470 e 58 L Rated capacitance 680 e 57 Anode(+) Lot. No.※2 ●B09, B1, B1G, B15G, B2 size (TPB, TPC, TPG, TPU, TQC series) Rated capacitance※3

POSCAP

Contextual Info: Surface mount type TPH Series OS-CON Line-up RoHS compliance, Halogen free Small size, Low profile: L3.2xW1.6xH0.9mm Face down terminal type Guidelines and precautions Specifications Items Selection guide Condition Rated voltage V − Surge voltage (V)

A09 MOSFET

Abstract: TSM7N65 ITO-220 6A 650V MOSFET 32nC
Contextual Info: TSM7N65 650V N-Channel Power MOSFET ITO-220 TO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)(Ω) ID (A) 650 1.2 @ VGS =10V 3 General Description The TSM7N65 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.

Power MOSFET SOT-223

Abstract: mosfet 600V 6A N-CHANNEL TSM2N60SCW 600V 2A MOSFET N-channel pin diagram of MOSFET Diode bridge 600V 0.8A "Power MOSFET" a09 marking MOSFET 450 mosfet j 114
Contextual Info: TSM2N60S 600V N-Channel Power MOSFET SOT-223 PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS V RDS(on)(Ω) ID (A) 600 5 @ VGS =10V 0.6 General Description The TSM2N60S is used an advanced termination scheme to provide enhanced voltage-blocking capability without

Contextual Info: TSM2N60S 600V N-Channel Power MOSFET SOT-223 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)() ID (A) 600 5 @ VGS =10V 0.6 General Description The TSM2N60S is used an advanced termination scheme to provide enhanced voltage-blocking capability without

6TPH100MAEA

Abstract: ETPH220MABC 6TPH47MHA
Contextual Info: Surface mount type TPHSeries RoHS compliance Small size・Low ESR Face down terminal type New TPH series is designed to save space by its face down terminal structure and respond to lower ESR needs. Specifications Items Condition Specifications Rated voltage

6TPU47MAI

Abstract: c6090 6TPU22MSI 6TPU33MSK 2R5TPU47MSI 10TPU33MAI marking s11 6TPU10MSI 4TPU47MSK TH 510
Contextual Info: Surface mount type TPU RoHS compliance Series Small size ・ Low profile Face down terminal type TPU series has a real advantage in size-sensitive applications using a face down terminal structure. TPU TPC Small size Low profile • Specifications Items

TSM1N45CT

Abstract: n-channel mosfet transistor
Contextual Info: TSM1N45 450V N-Channel Power MOSFET TO-92 PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS V RDS(on)(Ω) ID (A) 450 4.25 @ VGS =10V 0.25 General Description The TSM1N45 is N-Channel enhancement mode power field effect transistors are produced using planar DMOS

A09 resistor network

Abstract: B1578 L05 MARKING
Contextual Info: MRP precision metal film resistor SIP network NEW features • • • • • Custom design network Ultra-precision performance for precision analog circuits Tolerance to ±0.1%, matching to 0.05% T.C.R. to ±25ppm/°C, tracking to 2ppm/°C Marking: Black body color with white marking

3680 MOSFET

Abstract: TSM4425 p-channel mosfet TSM4425CS marking sop-8 P-Channel MOSFET code L 1A 27BSC
Contextual Info: TSM4425 30V P-Channel MOSFET SOP-8 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. Drain 4. Gate 5. Drain -30 Features ID (A) 12 @ VGS = -10V -11 19 @ VGS = -4.5V -8.5 Block Diagram ● Advance Trench Process Technology

TSM2306

Abstract: TSM2306CX IDA57 n-channel mosfet transistor n-channel mosfet SOT-23
Contextual Info: TSM2306 30V N-Channel MOSFET SOT-23 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Gate 2. Source 3. Drain 30 Features ID (A) 57 @ VGS =10V 3.5 94 @ VGS =4.5V 2.8 Block Diagram ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance

TS358CD

Contextual Info: TS358 Single Supply Dual Operational Amplifiers SOP-8 DIP-8 Pin assignment: 1. Output A 8. Vcc 2. Input A - 7. Output B 3. Input A (+) 6. Input B (-) 4. Gnd 5. Input B (+) General Description Utilizing the circuit designs perfected for recently introduced Quad Operational Amplifiers, these dual operational

Contextual Info: RT9261/A Preliminary VFM Step-up DC/DC Converter General Description Features The RT9261 Series are VFM Step-up DC/DC ICs with ultra low supply current by CMOS process and suitable for use with battery-powered instruments. z The RT9261 IC consists of an oscillator, a VFM control

MOSFET N SOT-23

Abstract: TSM3400CX marking 8A sot-23 n-channel mosfet transistor Power MOSFET N-Channel sot-23 ultra low igss pA TSM3400 n-channel mosfet SOT-23
Contextual Info: TSM3400 30V N-Channel MOSFET SOT-23 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Gate 2. Source 3. Drain 30 Features ID (A) 28 @ VGS = 10V 5.8 33 @ VGS = 4.5V 5.0 52 @ VGS = 2.5V 4.0 Block Diagram ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance

n-channel mosfet transistor

Abstract: 27BSC TSM4872
Contextual Info: TSM4872 30V N-Channel MOSFET SOP-8 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Source 2. Source 3. Source 4. Gate 5, 6, 7, 8. Drain 30 ID (A) 7.5 @ VGS =10V 15 10 @ VGS 4.5V 13 Block Diagram Features ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance

biquad filter using op-amp

Abstract: TS324
Contextual Info: TS324 Low Power Quad Operational Amplifiers DIP-14 SOP-14 Pin Definition: 1. Output A 14. Output D 2. Input A - 13. Input D (-) 3. Input A (+) 12. Input D (+) 4. Vcc 11. Gnd 5. Input B (+) 10. Input C (+) 6. Input B (-) 9. Input C (-) 7. Output B 8. Output C

Dual N-Channel MOSFET SOP8

Abstract: 60V dual N-Channel trench mosfet
Contextual Info: TSM4946D 60V Dual N-Channel MOSFET SOP-8 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Source 1 8. Drain 1 2. Gate 1 7. Drain 1 3. Source 2 6. Drain 2 4. Gate 2 5. Drain 2 60 Features ID (A) 55 @ VGS = 10V 4.5 75 @ VGS = 4.5V 3.9 Block Diagram ●

TSM4436

Contextual Info: TSM4436 60V N-Channel MOSFET SOP-8 Pin Definition: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. Drain 4. Gate 5. Drain PRODUCT SUMMARY VDS V RDS(on)(mΩ) 60 Features ID (A) 36 @ VGS = 10V 4.6 43 @ VGS = 4.5V 4.2 Block Diagram ● Advance Trench Process Technology

Contextual Info: TSM4436 60V N-Channel MOSFET SOP-8 Pin Definition: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. Drain 4. Gate 5. Drain PRODUCT SUMMARY VDS V RDS(on)(m) 60 Features ID (A) 36 @ VGS = 10V 4.6 43 @ VGS = 4.5V 4.2 Block Diagram  Advance Trench Process Technology