A062806 Search Results

ultrasound transducer circuit driver

Abstract: sonar transmitter MD1711 MD1711FG MD1711FG-G TC6320
Contextual Info: MD1711 High Speed, Integrated Ultrasound Driver IC Features General Description Drives two ultrasound transducer channels Generates 5-level waveform Drives 12 high voltage MOSFETs ±2.0A source and sink peak current Up to 20MHz output frequency 12V/ns slew rate

Contextual Info: HV238 Initial Release 16 Channel High Voltage Analog Switch With Bleed Resistors Features Description HVCMOS technology for high performance 220V operating conditions Output On-resistance typically 22Ω Integrated bleed resistors on the outputs 5.0V and 12.0V CMOS logic compatibility

Contextual Info: MD1711 High Speed, Integrated Ultrasound Driver IC Features ! ! ! ! ! ! ! ! ! ! General Description Drives two ultrasound transducer channels Generates 5-level waveform Drives 12 high voltage MOSFETs ±2.0A source and sink peak current Up to 20MHz output frequency

Contextual Info: HV230/HV232 Low Charge Injection 8-Channel High Voltage Analog Switches with Bleed Resistors Features General Description HVCMOS technology for high performance Very low quiescent power dissipation – 10µA Output On-resistance typically 22 ohms Integrated bleed resistors on the outputs

ultrasound transducer circuit driver

Abstract: sonar transmitter MD1711 MD1711FG MD1711FG-G TC6320 ultrasound piezoelectric transducer for medical i Piezoelectric ultrasound Transducer A1HV
Contextual Info: MD1711 High Speed, Integrated Ultrasound Driver IC Features General Description Drives two ultrasound transducer channels Generates 5-level waveform Drives 12 high voltage MOSFETs ±2.0A source and sink peak current Up to 20MHz output frequency 12V/ns slew rate

Contextual Info: HV20822 16 Channel High Voltage Analog Switch Features ► ► ► ► ► ► ► ► ► General Description HVCMOS technology for high performance 220V operating conditions Output on-resistance typically 22Ω 5.0V and 12.0V CMOS logic compatibility Very low quiescent current consumption 10µA