A06 NPN Search Results

NEC 2SC959

Abstract: BFR39 2SC309 100n AST44 LOW-POWER SILICON NPN 2SC1008A 2SC2274K 2SC3329-BL 2SC959
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number S 10 15 20 25 30 MPS-A06 PMBTAS6 PMBTAS6 FMMT-A06 FMMTA06 MMBTA06 MMBTA06 MMBTA06 MPSA06 PMBTA06 PMBTA06 5MBTA06 BCS3B BFT29 TP58S8 2N585B BFR39 BFR39 BFR39 2S0666 2N4410 BSX21 AST4410 BC447A BC447A BC4BS BC48S-18

MPSa56

Abstract: transistor A55 LO5A A06 NPN MPS-A56 mpsa55 a56 transistor kps a56 MPS A56 transistor MPS-A05
Contextual Info: MPS-A55 • MPS-A56 COMPLEMENTARY SILICON AP MEDIUM POWER TRANSISTORS i II CASE T0-92A THE MPS-A05, MPS-A06, MPS-A55, MPS-A56 'ARE SILICON PLANAR EPITAXIAL„TRANSISTORS FOR AF DRIVERS AND OUTPUTS, AS WELL AS FOR UNIVERSAL APPLICATIONS. THE MPS-A05, MPS-A06 ARE NPN AND ARE COMPLEMENTARY TO

MPSA55

Abstract: A06 NPN mpsa56 mpsa06 MFS-A05 MPS-A05 MPS-A06 MPS-A55 MPS-A56 MPS A06
Contextual Info: MPS-A06 MPS-A56 MPS-A05 MPS-A55 W'ß\ COMPLEMENTARY SILICON AF MEDIUM POWER TRANSISTORS CASE TO-92A THE MPS-A05, MPS-A06, MPS-A55» MPS-A56 ARE SILICON PLANAR EPITAXIAL„TRANSISTORS FOR AF DRIVERS AND OUTPUTS, AS WELL AS FOR UNIVERSAL APPLICATIONS. THE MPS-A05,

a06 amplifier

Abstract: a06 transistor a06 transistor 165 MPS-A05 MPS-A06
Contextual Info: r— i Silicon Transistors I I B I MPS-A05 MPS-A06 The MPS-A05 and MPS-A06 are silicon planar epitaxial passivated NPN tran­ sistors designed for general purpose audio amplifier applications. a b s o lu te m a x im u m r a t i n g s : TA = 25°c unless otherwise specified

Contextual Info: MPS-A05 • MPS-A06 MPS-A55 •MPS-A56 COMPLEMENTARY SILICON AP MEDIUM POWER TRANSISTORS * <l t e ± s . i = M = L ? « 1~ " x ” s ~ • CASE TO-92A THE MPS-A05, MPS-A06, MPS-A55» MPS-A56 'ARE SILICON PLANAR EPITAXIAL„TRANSISTORS FOR AF DRIVERS AND OUTPUTS, AS WELL AS

marking A06

Abstract: marking A06 amplifier KTMC1060SC MMBT3904T MMBT3906T transistor j25
Contextual Info: MMBT3906T PNP Epitaxial Silicon Transistor Features C • General purpose amplifier transistor. E • Ultra-Small Surface Mount Package for all types. B • Suitable for general switching & amplification Marking : A06 • Well suited for portable application

Contextual Info: MMBT3906T PNP Epitaxial Silicon Transistor Features C • General purpose amplifier transistor. • Ultra-Small Surface Mount Package for all types. • Suitable for general switching & amplification • Well suited for portable application E B Marking : A06

Contextual Info: Transistors NPN General Purpose Transistor I SSTA06/M MSTA06/M PS A06 # External dimensions Units : mm •F eatures 1 ) B V ceo < 4 0 V (lc = *1 m A ) SSTA06 2 ) Complements the SSTA56/MMSTA56/MPSA56. 0 .9 5 ± g ; f 1 9 ± 0 .2 •P ackage, mark and packaging specifications

sta06

Abstract: mark T116
Contextual Info: Transistors I NPN General Purpose Transistor SST A06/MMSTA06/MPSA06 •Features •Externa dimensions Units : mm) Í ) B V c e o < 4 0 V ( I c ^ lm A ) 2 ) Com plem ents the SS T A 56 /M M S T A 5 6/M PS A 56 . SSTA06 •Package, mark and packaging specifications

a06 transistor

Abstract: transistor 468 TRANSISTOR A06 mpsa065 a06 amplifier transistor A55 MPSA55 GE 001755 a56 transistor Transistor B C 468
Contextual Info: G E SOLID STATE Öl ÏVEÏ3Û750Û1 DOIVES Signal Transistors MPS-A05, A06, A55, A56 Silicon Transistors TO-92 The GE/RCA MPS-A 05,06 NPN types and M PS-A 55,56 PNP types are planar epitaxial passivated silicon transistors de­ signed for medium current general purpose amplifier appli­

Contextual Info: MPS-A06 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)80 I(C) Max. (A)500m Absolute Max. Power Diss. (W)625m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)80 V(CE)sat Max. (V).25 @I(C) (A) (Test Condition)100m

mpsa56

Abstract: transistor A55 TRANSISTOR A06 AN-41 MPS-A05 MPS-A06 MPS-A55 MPS-A56 MPS A05 transistor psa06
Contextual Info: MPS-A05,MPS-A06 NPN/MPS-A55,MPS-A56 continued E LECTRICAL CHARACTERISTICS ( T ^ = 2 5 ° C u n le ss o th e rw ise n o te d .) _ C h a r a c te r ist ic | Sym bol | M in | M ax | U n it O F F C H A R A C T E R IS T IC S C o lle c t o r -E m it t e r B r e a k d o w n V o lt a g e (1 )

Siemens DIODE E 1240

Abstract: AMS 3630 Code "A06" RF Semiconductor SIEMENS BFP420 Transistor MJE 540 HA 12432 SOT343-3 BFP420 application notes BFP420 A06 ff 0401 transistor
Contextual Info: S IE M E N S SIEGET 25 BFP420 NPN Silicon RF Transistor • • • • • • For High Gain Low Noise Amplifiers For Oscillators up to 10 GHz Noise Figure F = 1.05 dB at 1.8 GHz Outstanding Gms = 20 dB at 1.8 GHz Transition Frequency 1j = 25 GHz Gold metalization for high reliability

SIEMENS BFP405

Abstract: marking A06 transistor A06
Contextual Info: SIEMENS SIEGET 25 BFP405 NPN Silicon RF Transistor • • • • • • For Low Current Applications For Oscillators up to 12 GHz Noise Figure F = 1.15 dB at 1.8 GHz Outstanding Gms = 22 dB at 1.8 GHz Transition Frequency fT = 25 GHz Gold metalization for high reliability

a06 transistor

Abstract: Code "A06" RF Semiconductor transistor A06 f 1405 zs BFP450 A06 NPN Siemens 1713 Q62702-F1590 marking A06 SIEMENS BFP450
Contextual Info: SIEGET 25 BFP450 NPN Silicon RF Transistor l For Medium Power Amplifiers l Compression Point P = +19 dBm at 1.8 GHz -1dB l l l Maximum Available Gain Gma = 14 dB at 1.8 GHz Noise Figure F = 1.25 dB at 1.8 GHz Transition Frequency fT = 24 GHz Gold metalization for high reliability

a06 transistor

Abstract: TRANSISTOR A06 Code "A06" RF Semiconductor marking AAAA marking A06 BF 184 transistor BFP405 a06 transistor 165 chip diode 047 SIEMENS BFP405
Contextual Info: SIEGET 25 BFP405 NPN Silicon RF Transistor Low Current Applications l For Oscillators up to 12 GHz l For Noise Figure F = 1.15 dB at 1.8 GHz l Outstanding G = 22 dB at 1.8 GHz Transition Frequency f = 25 GHz l Gold metalization for high reliability l SIEGET 25-Line

A05 SOT

Abstract: A06 NPN a06 transistor marking A06 A05 sot-23 a06 to92 k 036 A06 diode D 92 M 03 DIODE MMBTA05
Contextual Info: MPSA05/06 / MMBTA05/06 NPN SMALL SIGNAL TRANSISTORS POWER SEMICONDUCTOR Features • • • MMBTA05 / MMBTA06 Epitaxial Planar Die Construction High Transition Frequency Recommended for Driver and Low-Power Output Stages A C TOP VIEW B C B E G E D H K Mechanical Data

AMS 3630

Abstract: a06 transistor Q62702-F1591 ff 0401 transistor A06 marking A06 BFP420 A06 Code "A06" RF Semiconductor BFP420 application notes BFP420
Contextual Info: SIEGET 25 BFP420 NPN Silicon RF Transistor l For High Gain Low Noise Amplifiers l For Oscillators up to 10 GHz l Noise Figure F = 1.05 dB at 1.8 GHz Outstanding G = 20 dB at 1.8 GHz l Transition Frequency f = 25 GHz l Gold metalization for high reliability

Contextual Info: DISCRETE SEMICONDUCTORS MPSA05; A06 NPN general purpose transistors Product specification Supersedes data of 1997 Mar 26 File under Discrete Semiconductors, SC04 Philips Sem iconductors 1998 Jul 21 PHILIPS Philips Semiconductors Product specification NPN general purpose transistors

MMDTA06

Abstract: a06 transistor marking a06
Contextual Info: MMDTA06 ADVANCE INFORMATION 80V DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features & Benefits Mechanical Data • • • • • • • • • • BVCEO > 80V ICM = 1A Peak Pulse Current General purpose NPN transistors ideally suited for low power

MMDTA06

Contextual Info: MMDTA06 ADV AN CE I N FORM AT I ON 80V DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features & Benefits Mechanical Data • • • • • • • • • • BVCEO > 80V ICM = 1A Peak Pulse Current General purpose NPN transistors ideally suited for low power

Contextual Info: RT9203/A Preliminary Dual Regulators - Synchronous Buck PWM DC-DC and Linear Controller General Description Features The RT9203/A is a dual-output power controllers designed for high performance graphics cards and personal computers. The IC integrates a synchronous buck

LC 235 ATX

Abstract: power supply lc 235 atx
Contextual Info: RT9203/A Preliminary Dual Regulators - Synchronous Buck PWM DC-DC and Linear Controller General Description Features The RT9203/A is a dual-output power controllers designed for high performance graphics cards and personal computers. The IC integrates a synchronous buck

MARKING CODE A06

Abstract: marking 1G SOT23 sot-23 MARKING CODE G1 AH A06 sot-23 body marking 1P NPN e30551 marking A06 A12 marking amplifier A55 marking sot-23 Marking G1
Contextual Info: FERRANTI * semiconductors FMMT-A05 FM MT-AO6 NPN Silicon Planar Medium Power Transistors D E S C R IP T IO N M e d iu m pow er transistors designed fo r sm all and medium am plification from d.c. to radio frequencies, in applica­ tio n s such as Audio Frequency Am plifiers, Drivers,