A0-A12 SRAM Search Results

512 eeprom dip 32-pin

Abstract: Real Time Clock 34-pin DS1646 DS1647 DS1647P DS164XP DS9034PCX
Contextual Info: DS1647/DS1647P PRELIMINARY DS1647/DS1647P Nonvolatile Timekeeping RAM FEATURES PIN ASSIGNMENT • Integrated NV SRAM, real time clock, crystal, power– A18 A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 DQ1 DQ2 GND fail control circuit and lithium energy source

Contextual Info: SPACE ELECTRONICS INC. 256 KBIT 32K X 8-BIT CMOS SRAM SPACE PRODUCTS A14 32C2568ERP 28 1 VCC A12 WE A7 A13 A6 A8 A5 A9 A4 A11 A0 VCC MEMORY ARRAY 256 x 128 x 8 ROW DECODER A3 OE SEi 32C2568RP A2 CS A0 I/O8 I/O1 I/O7 I/O2 I/O6 I/O3 I/O5 GND 14 A7 I\O1 COLUMN I/O

DS1646

Abstract: DS1647 DS1647P DS164XP DS9034PCX
Contextual Info: DS1647/DS1647P PRELIMINARY DS1647/DS1647P Nonvolatile Timekeeping RAM FEATURES PIN ASSIGNMENT • Integrated NV SRAM, real time clock, crystal, power– A18 A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 DQ1 DQ2 GND fail control circuit and lithium energy source

M4T28-BR12SH1

Contextual Info: M4T28-BR12SH1 IL16 * TIMEKEEPER SNAP HAT LITHIUM BATTERY -SIDE VIEW- M4T28-BR12SH1 TOP HAT M48T18-100MH1TR 8 x 8 BIPORT SRAM ARRAY OSCILLATOR AND CLOCK CHAIN 32768Hz CRYSTAL 2-10,23-25 A0-A12 11-13,15-19 8184 x 8 SRAM ARRAY DQ0-DQ7 LITHIUM CELL VOLTAGE SENSE

32C408BRP-20

Abstract: 32C408BRP-25 32C408BRP-30 512KWORD F3601 32c49
Contextual Info: SPACE ELECTRONICS INC. CMOS 512KWORD X 8-BIT STATIC RAM SPACE PRODUCTS A0 A1 1 32C408BRP 36 NC A18 A17 A16 A2 A3 A13 A12 A11 A10 A9 A8 CS I/O1 A15 OE A7 A6 I/O8 A4 I/O2 I/O7 Vcc Vss Vss Vcc I/O3 I/O4 I/O6 I/O5 WE A14 A5 A6 A13 A12 A7 A8 A11 A10 A4 18 19 NC

32C408BRP-20

Abstract: 32C408BRP-25 32C408BRP-30 F3601 32c49
Contextual Info: SPACE ELECTRONICS INC. CMOS 512KWORD X 8-BIT STATIC RAM SPACE PRODUCTS A0 A1 1 32C408BRP 36 NC A18 A17 A16 A2 A3 A13 A12 A11 A10 A9 A8 CS I/O1 A15 OE A7 A6 I/O8 A4 I/O2 I/O7 Vcc Vss Vss Vcc I/O3 I/O4 I/O6 I/O5 WE A14 A5 A6 A13 A12 A7 A8 A11 A10 A4 18 19 NC

23425

Contextual Info: White Electronic Designs 2x512Kx8 DUALITHIC™ SRAM PRELIMINARY* FEATURES PIN CONFIGURATION FOR WS1M8-XCX • Access Times 70, 85, 100ns 32 DIP ■ Evolutionary, Corner Power/Ground Pinout TOP VIEW A18 A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 GND

Contextual Info: D S 1647/D S1647P PRELIMINARY DALLAS SEMICONDUCTOR DS1647/D S1647P Nonvolatile Timekeeping RAM FEATURES PIN ASSIGNMENT A18 A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 DQ1 DQ2 GND • Integrated NV SRAM, real time clock, crystal, powerfail control circuit and lithium energy source

WMS512K8V-XXX

Contextual Info: WMS512K8V-XXX 512Kx8 MONOLITHIC SRAM ADVANCED* FEATURES EVOLUTIONARY PINOUT • Access Times 70, 85, 100, 120ns ■ MIL-STD-883 Compliant Devices Available ■ Low Voltage Operation 32 DIP 32 CSOJ DE TOP VIEW A18 A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O0

Contextual Info: M4T28-BR12SH1 IL08 LITHIUM BATTERY AND CRYSTAL —SIDE VIEW— M4T28-BR12SH1 TOP HAT M48T18-100MH1TR 8 x 8 BIPORT SRAM ARRAY OSCILLATOR AND CLOCK CHAIN 32,768 Hz CRYSTAL 2 - 10, 23 - 25 A0 - A12 8184 x 8 SRAM ARRAY 11 - 13, 15 - 19 DQ0 - DQ7 LITHIUM CELL VOLTAGE SENSE

Contextual Info: WS1M8V-XCX 2x512Kx8 DUALITHIC SRAM ADVANCED* FEATURES PIN CONFIGURATION FOR WS1M8V-XCX • Access Times 70, 85, 100ns ■ Evolutionary, Corner Power/Ground Pinout 32 DIP ■ Packaging: TOP VIEW A18 A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 GND

Contextual Info: DS1543 PRELIMINARY DALLAS SEMICONDUCTOR DS1543 64K NV Timekeeping RAM FEATURES PIN ASSIGNMENT • Integrated NV SRAM, real tim e clock, crystal, p o w e rfail control circuit and lithium energy source RST C A12 □ A7 □ A6 c A5 c A4 □ A3 c A2 c A1 A0 □

DS174XP

Abstract: 34-PIN DS1743 DS1743P DS9034PCX
Contextual Info: PRELIMINARY DS1743/DS1743P Y2KC Nonvolatile Timekeeping RAM www.dalsemi.com PIN ASSIGNMENT FEATURES § Integrated NV SRAM, real time clock, crystal, power§ § § § § § § § § § § NC A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 DQ1 DQ2 GND fail control circuit and lithium energy source

5962-8959821MMA

Contextual Info: SRAM MT5C1008 Austin Semiconductor, Inc. 128K x 8 SRAM PIN ASSIGNMENT Top View WITH DUAL CHIP ENABLE 32-Pin DIP (C, CW) 32-Pin CSOJ (SOJ) AVAILABLE AS MILITARY SPECIFICATIONS NC A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ1 DQ2 DQ3 VSS •SMD 5962-89598 •MIL-STD-883

5962-8959809

Abstract: 5962-8959806 5962-8959812MYA SRAM 5962-8959809MZA
Contextual Info: SRAM MT5C1009 Austin Semiconductor, Inc. 128K x 8 SRAM PIN ASSIGNMENT Top View WITH CHIP & OUTPUT ENABLE 32-Pin DIP (C, CW) 32-Pin SOJ (SOJ) AVAILABLE AS MILITARY SPECIFICATIONS NC A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ1 DQ2 DQ3 VSS •SMD 5962-89598 •MIL-STD-883

Contextual Info: White Electronic Designs WMS512K8-XXX 512Kx8 MONOLITHIC SRAM, SMD 5962-95613 EVOLUTIONARY PINOUT A18 A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 GND FEATURES 32 DIP 32 CSOJ DE • Access Times 70, 85, 100, 120ns ■ MIL-STD-883 Compliant Devices Available

5962-8959838MZA

Abstract: 431 SMD CODE MARKING 5962-89598 5962-8959836MMA 5962-8959837MXA A7 SMD TRANSISTOR E2 SMD Transistor mt5c1008 smd a10 SMD a7 Transistor
Contextual Info: SRAM MT5C1008 Austin Semiconductor, Inc. 128K x 8 SRAM PIN ASSIGNMENT Top View WITH DUAL CHIP ENABLE 32-Pin DIP (C, CW) 32-Pin CSOJ (SOJ) AVAILABLE AS MILITARY SPECIFICATIONS NC A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ1 DQ2 DQ3 VSS •SMD 5962-89598 •MIL-STD-883

max 32321

Abstract: E2 SMD Transistor 32321 smd MT5C1009 576 431 SMD CODE MARKING 5962-89598 MT5C1009C25 smd a10 SMD A8 smd code marking A8
Contextual Info: SRAM MT5C1009 Austin Semiconductor, Inc. 128K x 8 SRAM PIN ASSIGNMENT Top View WITH CHIP & OUTPUT ENABLE 32-Pin DIP (C, CW) 32-Pin SOJ (SOJ) AVAILABLE AS MILITARY SPECIFICATIONS NC A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ1 DQ2 DQ3 VSS •SMD 5962-89598 •MIL-STD-883

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Contextual Info: SRAM MT5C1008 Austin Semiconductor, Inc. 128K x 8 SRAM PIN ASSIGNMENT Top View WITH DUAL CHIP ENABLE 32-Pin DIP (C, CW) 32-Pin CSOJ (SOJ) AVAILABLE AS MILITARY SPECIFICATIONS NC A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ1 DQ2 DQ3 VSS •SMD 5962-89598 •MIL-STD-883

DS1646

Abstract: DS1646P DS164XP DS9034PCX
Contextual Info: DS1646/DS1646P DS1646/DS1646P Nonvolatile Timekeeping RAM FEATURES PIN ASSIGNMENT • Integrated NV SRAM, real time clock, crystal, power– NC A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 DQ1 DQ2 GND fail control circuit and lithium energy source • Clock registers are accessed identical to the static

max 32321

Abstract: smd diode code B2 smd a10 smd transistor marking A11 5962-8959812MXA 5962-8959809MZA 431 SMD CODE MARKING 5962-8959824 SMD A8 smd diode a5
Contextual Info: SRAM MT5C1009 Austin Semiconductor, Inc. 128K x 8 SRAM PIN ASSIGNMENT Top View WITH CHIP & OUTPUT ENABLE 32-Pin DIP (C, CW) 32-Pin SOJ (SOJ) AVAILABLE AS MILITARY SPECIFICATIONS NC A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ1 DQ2 DQ3 VSS •SMD 5962-89598 •MIL-STD-883

c 4072

Abstract: WMS512K8-XXX
Contextual Info: White Electronic Designs WMS512K8-XXX 512Kx8 MONOLITHIC SRAM, SMD 5962-95613 EVOLUTIONARY PINOUT A18 A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 GND FEATURES 32 DIP 32 CSOJ DE • Access Times 70, 85, 100, 120ns ■ MIL-STD-883 Compliant Devices Available

DS1646-150

Abstract: DS9034PC DS1646 DS1646P DS164XP DS9034PCX
Contextual Info: DS1646/DS1646P DS1646/DS1646P Nonvolatile Timekeeping RAM FEATURES PIN ASSIGNMENT • Integrated NV SRAM, real time clock, crystal, power– NC A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 DQ1 DQ2 GND fail control circuit and lithium energy source • Clock registers are accessed identical to the static

5962-8959810MZ

Abstract: SMD MARKING A16
Contextual Info: SRAM MT5C1009 Austin Semiconductor, Inc. 128K x 8 SRAM PIN ASSIGNMENT Top View WITH CHIP & OUTPUT ENABLE 32-Pin DIP (C, CW) 32-Pin SOJ (SOJ) AVAILABLE AS MILITARY SPECIFICATIONS NC A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ1 DQ2 DQ3 VSS •SMD 5962-89598 •MIL-STD-883