A SOT363 Search Results

sot363

Abstract: SC-88 package SOT363 6 A.4 SOT363
Contextual Info: PDF: 1999 Apr 16 Philips Semiconductors Package outline Plastic surface mounted package; 6 leads SOT363 D E B y X A HE 6 v M A 4 5 Q pin 1 index A A1 1 2 e1 3 bp c Lp w M B e detail X 1 2 mm scale DIMENSIONS mm are the original dimensions UNIT A A1 max bp

SOT363

Abstract: SOT-363
Contextual Info: Package outline Philips Semiconductors Plastic surface mounted package; 6 leads SOT363 D E B y X A HE 6 5 v M A 4 Q pin 1 index A A1 1 2 e1 3 bp c Lp w M B e detail X 1 2 mm scale DIMENSIONS mm are the original dimensions UNIT A A1 max bp c D E e e1 HE Lp

Contextual Info: Package outline Philips Semiconductors Plastic surface-mounted package; 6 leads SOT363 D E B y X A HE 6 5 v M A 4 Q pin 1 index A A1 1 2 e1 3 bp c Lp w M B e detail X 1 2 mm scale DIMENSIONS mm are the original dimensions UNIT A A1 max bp c D E e e1 HE Lp

ABA-32563

Abstract: rf choke 1008CS-220XMBC ABA-31563 agilent s aba sot tv tuner "30-pin"
Contextual Info: ABA-32563 3 GHz Broadband Silicon RFIC Amplifier Application Note 5042 Introduction RF Input and Output Agilent Technologies’ ABA-32563 is a low current silicon gain block RFIC amplifier housed in a 6 lead SC-70 SOT363 surface mount plastic package. Providing a nominal

rf choke

Abstract: ABA-32563 ABA-31563 1008CS-220XMBC aba sot ABA SURFACE MOUNT ABA-31563/32563
Contextual Info: ABA-31563 3 GHz Broadband Silicon RFIC Amplifier Application Note 5043 Introduction RF Input and Output Avago Technologies’ ABA-31563 is a low current silicon gain block RFIC amplifier housed in a 6 lead SC-70 SOT363 surface mount plastic package. Providing a nominal

Contextual Info: Package outline Plastic surface-mounted package; 6 leads SOT363 D E B y X A HE 6 5 v M A 4 Q pin 1 index A 1 2 e1 A1 3 bp c Lp w M B e detail X 1 2 mm scale DIMENSIONS mm are the original dimensions UNIT A A1 max bp c D E e e1 HE Lp Q v w y mm 1.1 0.8 0.1

sot363 voltage controller

Abstract: AEC-Q100 optocoupler mark K1 sot363 tlv431
Contextual Info: A Product Line of Diodes Incorporated TLV431 1.24V COST EFFECTIVE SHUNT REGULATOR Description Pin Assignments TLV431_H6 SC70-6 [SOT363] The TLV431 is a three terminal adjustable shunt regulator offering excellent temperature stability and output current handling capability

Contextual Info: £ £ N £ H K F R E E S C A L E SEMICONDUCTOR, A L L R IG H T S RESERVED. INC. MECHANICAL TITLE' OUTLINE DOCUMENT SOT363, 6LD, 0.65MM DITCH CASE PRINT NO' 9 8 A S B 4 2 9 8 5 B NUMBER' 4 1 9 B -0 1 STANBARB VERSIEN NUN-UEBEC NET TE SCALE REV' J 24 MAY

dual inverter

Abstract: 74LVC2G04DW-7 Dual Inverter Gate
Contextual Info: 74LVC2G04 DUAL INVERTER GATE Description Pin Assignments The 74LVC2G04 is a dual inverter gate with standard pushpull outputs. The device is designed for operation with a power supply range of 1.65V to 5.5V. The inputs are tolerant SOT26 SOT363 are Future

Contextual Info: 74LVC2G17 DUAL SCHMITT TRIGGER BUFFER Description Pin Assignments The 74LVC2G17 is a dual Schmitt trigger buffer gate with standard push-pull outputs. The device is designed for operation with a power supply range of 1.65V to 5.5V. The SOT26 SOT363 are Future

74LVC2G06DW-7

Contextual Info: 74LVC2G06 DUAL INVERTER WITH OPEN DRAIN OUTPUTS Description Pin Assignments The 74LVC2G06 is a dual inverter gate with open drain outputs. The device is designed for operation with a power SOT26 SOT363 are Future Products supply range of 1.65V to 5.5V. The input is tolerant to 5.5V

marking code ya SMD Transistor

Abstract: nxp sot363 MARKING 16
Contextual Info: TS SO P6 PMG85XP 20 V, 2 A P-channel Trench MOSFET Rev. 1 — 28 June 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench

PBSS9110Y

Contextual Info: PBSS9110Y 100 V, 1 A PNP low VCEsat BISS transistor Rev. 02 — 22 November 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat transistor in a SOT363 (SC-88) plastic package. 1.2 Features „ „ „ „ SOT363 package Low collector-emitter saturation voltage VCEsat

C 102 transistor equivalent table

Abstract: PBSS8110Y PPBSS8110Y
Contextual Info: PBSS8110Y 100 V, 1 A NPN low VCEsat BISS transistor Rev. 02 — 21 November 2009 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat transistor in a SOT363 (SC-88) plastic package. 1.2 Features „ „ „ „ SOT363 package Low collector-emitter saturation voltage VCEsat

Contextual Info: PBSS8110Y 100 V, 1 A NPN low VCEsat BISS transistor Rev. 02 — 21 November 2009 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat transistor in a SOT363 (SC-88) plastic package. 1.2 Features ̈ ̈ ̈ ̈ SOT363 package Low collector-emitter saturation voltage VCEsat

PBSS9110Y

Contextual Info: PBSS9110Y 100 V, 1 A PNP low VCEsat BISS transistor Rev. 01 — 9 June 2004 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat transistor in a SOT363 (SC-88) plastic package. 1.2 Features • ■ ■ ■ SOT363 package Low collector-emitter saturation voltage VCEsat

PBSS8110Y

Abstract: PPBSS8110Y
Contextual Info: PBSS8110Y 100 V, 1 A NPN low VCEsat BISS transistor Rev. 01 — 2 June 2004 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat transistor in a SOT363 (SC-88) plastic package. 1.2 Features • ■ ■ ■ SOT363 package Low collector-emitter saturation voltage VCEsat

L05 SMD diode

Abstract: TRANSISTOR SMD 2X 7 smd diode l15 BGA2011 smd transistor 2x
Contextual Info: H High IP3 MMIC LNA at 900 MHz Application note for the BGA2011 The BGA2011 is a MMIC LNA for cellular applications at 900 MHz that require good linearity, like CDMA. The MMIC is produced by the single metal DPO Philips process and is packaged in a 6-pin SOT363. The circuit is equipped with control pin that can set the amplifier to low

SCR fbp

Abstract: FBP-02C sod-882 10-16 kbpc Triac/SCR A-405 SLP4016P16 A405 triac DO222A
Contextual Info: LITE-ON SEMICONDUCTOR Rev. Jul, 2010 OUTLINE DIMENSIONS Fig. 2 Fig. 1 T-1 A A- 405 A B A B A C C D D T-1 A-405 Min. Max. - B 25.4 2.60 3.20 B 25.4 4.10 C 0.53 0.64 C 0.53 Dim. A Dim. A 2.20 2.60 D All Dimensions in millimeter Min. Max. 5.20 0.64 2.00 2.70

3000 Watt BTL Audio Amplifier

Abstract: NE570 Audio Dynamic Noise Reduction audio Amp. mosfet 1000 watt power transistor audio amplifier 500 watts NCP1337 MJ15003 300 watts amplifier NE570 equivalent Remote Control Toy Car Receiver IC mosfet 500 watts audio amplifier 400 watt audio amplifier MOSFET
Contextual Info: A high-quality audio experience is becoming more important in a wide variety of different end products and ON Semiconductor has and is continuing to develop solutions to address a diverse set of customers’ problems, be it in a portable GPS receiver, a digital music player, or a professional audio

MJ15003 300 watts amplifier

Abstract: NCP1337 MJE15035 mj15024 MJ*15033 NJL0281D NJL1302D MJ15024-MJ15025 mjl4281 spdt sot363 rf
Contextual Info: A high-quality audio experience is becoming more important in a wide variety of different end products and ON Semiconductor has and is continuing to develop solutions to address a diverse set of customers’ problems, be it in a portable GPS receiver, a digital music player, or a professional audio

Contextual Info: NSB13211DW6T1G Dual Complementary Bias Resistor Transistors Complementary BRTs with Monolithic Bias Network NSB13211DW6T1G contains a single PNP bias resistor transistor and a single NPN bias resistor transistor with a monolithic bias network; a series base resistor and a base-emitter resistor. This device

NSB13211DW6T1G

Abstract: 419B-02 marking .544 sot363 sot363 N3 marking N3 sot363
Contextual Info: NSB13211DW6T1G Dual Complementary Bias Resistor Transistors Complementary BRTs with Monolithic Bias Network NSB13211DW6T1G contains a single PNP bias resistor transistor and a single NPN bias resistor transistor with a monolithic bias network; a series base resistor and a base-emitter resistor. This device

AN062

Abstract: INFINEON application note BGA428 N062 amplifier transistor application based circuit
Contextual Info: A pp l ic a t io n N o t e, R e v . 2. 0 , J a n. 2 00 7 A p p li c a t i o n N o t e N o . 0 6 2 A L o w P a r t s C o u n t L o w N o i s e A m p li f i e r f o r G P S A p pl i c a t i o n s us i n g B G A 4 2 8 R F & P r o t e c ti o n D e v i c e s Edition 2007-01-09