A OF IGBT Search Results

igbt 6.5kv

Abstract: 6.5kV IGBT FZ600R65KF1 AN2002-05 1kA IGBT
Contextual Info: APPLICATION NOTE Date: 02-07-05 Page 1 of 3 AN-Number: AN2002-05 Short Circuit Operation of 6.5kV IGBTs This application note presents aspects for driving IGBTs, which allow a safe short circuit operation of 6.5kV IGBTs. The following picture shows a short circuit turn-off of a FZ600R65KF1 with and without a clamping of

73E05

Abstract: 73E-05 abb inverter protection single phase igbt based inverter 200 amps circuit 97E-05
Contextual Info: Application Note Paralleling of IGBT modules Paralleling of modules or paralleling of inverters becomes necessary, if a desired inverter rating or output current can not be achieved with a single IGBT module as switch. From an economic point of view paralleling of modules

electric motor

Abstract: power window motor General Electric shunt resistor current motor motor power window
Contextual Info: General Application Note for the PWR Family of Power Resistors Power Resistors from the PWR Series are used in a variety of different configurations of power supplies. The main functions are either to absorb the inrush current caused by the switching action of a power device such as a MOSFET or IGBT or as a shunt, which is

40N60A4

Abstract: HGTG40N60A4 HGT1Y40N60A4D LD26 TA49347
Contextual Info: HGTG40N60A4 Data Sheet December 2001 600V, SMPS Series N-Channel IGBT Features The HGTG40N60A4 is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a

pj 69 diode

Abstract: shottky barrier diode 100V 100A diode pj sic igbt 1000V 400 A failure analysis IGBT sic diode diode schottky 600v Cree SiC diode die 300C 600C
Contextual Info: Characterisation of 4H-SiC Schottky Diodes for IGBT Applications C. M. Johnson*, M. Rahimo*, N. G. Wright*, D. A. Hinchley*, A. B. Horsfall*, D. J. Morrison*, A. Knights* *Department of Electrical and Electronic Engineering University of Newcastle Newcastle-upon-Tyne NE1 7RU

IXAN0014

Abstract: 0014 inverter circuit using MOSFET and micro controller mosfet 1500v difference between IGBT and MOSFET IN inverter IXBH9N160 ac to dc converter with chopper transformer mosfet 4b flyback converter 2A 15V gate drive pulse transformer Gate Drive Characteristics Requirements
Contextual Info: Technical Application IXAN0014 Comparative Performance of BIMOSFETs in Fly-Back Converter Circuits One of the typical applications for a flyback converter is the auxiliary power supply for the IGBT gate driver in an inverter. The essential requirement for a switch of a flyback converter in a drives inverter is a high breakdown voltage combined with fast

G30N60A4

Abstract: HGTG30N60A4
Contextual Info: HGTG30N60A4 Data Sheet September 2004 600V, SMPS Series N-Channel IGBT Features The HGTG30N60A4 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar

g30n60a4

Abstract: g30n60 IGBT G30N60A4 G30N60A4 transistor G30N60A HGTG30N60A4 LD26 TA49343 TA49373
Contextual Info: HGTG30N60A4 Data Sheet September 2004 600V, SMPS Series N-Channel IGBT Features The HGTG30N60A4 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar

g30n60a4

Abstract: IGBT G30N60A4 G30N60A HGTG30N60A4 TA49343 G30N60A4 transistor LD26 TA49373
Contextual Info: HGTG30N60A4 Data Sheet December 2001 600V, SMPS Series N-Channel IGBT Features The HGTG30N60A4 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar

Contextual Info: V23990-P381-A-PM final datasheet V23990-P381-A-01-19 fastPIM 1H, 600V, 12A Output inverter application Phase shifted ZVS, Vgeon= 15 V Vgeoff=0V Rgon= Figure 1. Typical static loss of shifted switch as a function of output current IGBT 2 ohms Typical static loss of shifted switch

Contextual Info: HGT1S20N60C3S9A Data Sheet August 2003 45A, 600V, UFS Series N-Channel IGBT Features This family of MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar

G12N60B3

Abstract: HGTG12N60B3 HGTG12N60B3D LD26
Contextual Info: HGTG12N60B3 Data Sheet August 2003 27A, 600V, UFS Series N-Channel IGBTs Features This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar

Contextual Info: V23990-P380-A-PM final datasheet V23990-P380-A-01-19 fastPIM 1H, 600V, 30A Output inverter application Phase shifted ZVS, Vgeon= 15 V Vgeoff=0V Rgon= Figure 1. Typical static loss of shifted switch as a function of output current IGBT Rgoff= 1 ohms Typical static loss of shifted switch

MOSFET 4407

Abstract: ir2110 class d amp IRFP450 inverter irfp460 ir2110 Class d IR2110 inverter ic 3524 application ir2110 with calculations for inverter BJT with V-I characteristics INT-983 Inverter IR2110
Contextual Info: Application Note AN-990 Application Characterization of IGBTs Table of Contents Page I. Gate Drive Requirements . 1 I. A Impact of the impedance of the gate drive circuit on switching losses. 1

G40N60

Abstract: g40n60b3 HGTG40N60B3 equivalent TA49052 HGTG40N60B3 LD26 RHRP3060 g40n60b
Contextual Info: HGTG40N60B3 Data Sheet January 2000 70A, 600V, UFS Series N-Channel IGBT Features The HGTG40N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar

g30n60b3

Abstract: HGTG30N60B3 GE 443 HGTG30N60B3D LD26 TA49170 G30N60
Contextual Info: HGTG30N60B3 Data Sheet November 2000 60A, 600V, UFS Series N-Channel IGBT Features The HGTG30N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar

G40N60

Abstract: G40N60B3 HGTG40N60B3 equivalent HGTG40N60B3 LD26 RHRP3060 TA49052 g40n60b3 igbt
Contextual Info: HGTG40N60B3 Data Sheet November 2004 70A, 600V, UFS Series N-Channel IGBT Features The HGTG40N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar

Contextual Info: HGTG30N60B3 Data Sheet November 2004 60A, 600V, UFS Series N-Channel IGBT Features The HGTG30N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar

G30N60B3

Abstract: GE 443 HGTG30N60B3 HGTG30N60B3D LD26 TA49170
Contextual Info: HGTG30N60B3 Data Sheet December 2001 60A, 600V, UFS Series N-Channel IGBT Features The HGTG30N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar

G30N60B3

Abstract: HGTG30N60B3 LD26 TA49170
Contextual Info: HGTG30N60B3 Data Sheet January 2000 60A, 600V, UFS Series N-Channel IGBT Features The HGTG30N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar

HGTG40N60B3 equivalent

Abstract: G40N60 g40n60b3 HGTG40N60B3 transistor C110 LD26 RHRP3060 TA49052 g40n6
Contextual Info: HGTG40N60B3 Data Sheet January 2000 70A, 600V, UFS Series N-Channel IGBT Features The HGTG40N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar

G30N60

Abstract: TA49051 G30N60C3 HGTG30N60C3 LD26 RHRP3060 igbts
Contextual Info: HGTG30N60C3 Data Sheet December 2001 63A, 600V, UFS Series N-Channel IGBT Features The HGTG30N60C3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar

G40N60

Abstract: g40n60b3 HGTG40N60B3 equivalent TA49052 g40n60b HGTG40N60B3 LD26 RHRP3060
Contextual Info: HGTG40N60B3 Data Sheet August 2003 70A, 600V, UFS Series N-Channel IGBT Features The HGTG40N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar

g30n60b3

Abstract: G30N60 HGTG30N60B3 TA49170 HGTG30N60B3D LD26 DIODE B2 IC2560
Contextual Info: HGTG30N60B3 Data Sheet August 2003 60A, 600V, UFS Series N-Channel IGBT Features The HGTG30N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar