A DSM GATE NO Search Results

Contextual Info: r1 MCD40 Thyristor/Diode Module TRMS — •TAVM V RRM — 2x 60 A 2x 38 A 1200-1600 V Preliminary data V RSM V DSM V RRM V DRM V V 1300 1700 1200 1600 / Type A/K G K II SOT-227 B, miniBLOC r I I MCD 40-12io6 MCD 40-16io6 A/K K = Cathode, A = Anode, G = Gate,

Contextual Info: OIXYS CS 30 Phase Control Thyristor vRRM = 1200-1600 V I T RMS I V RSM V RRM V DSM V DRM V V 1200 1400 1600 1200 1400 1600 = 4 9 A = 3 1 A TO-247 AD Type CS 30-12io1 CS 30-14io1 CS 30-16io1 C = Cathode, A = Anode, G = Gate TAB = Anode Symbol Test Conditions

CS458

Contextual Info: aixYS CS 45 v RRM Phase Control Thyristor V RSM V RRM V DSM V DRM V V T RMS 75 A T(AV)M 48 A TO-247 AD Type Ao ( ^ l ) o C G 800 1200 1600 900 1300 1700 8 0 0 -1600 V CS 45-08io1 CS 45-12io1 CS 45-16io1 C = Cathode, A = Anode, G = Gate TAB = Anode Symbol

M/LT 2146

Abstract: rsm ah 16
Contextual Info: OIXYS CS 45 v RRM Phase Control Thyristor V RSM V RRM V DSM V DRM V V T RMS 75 A T(AV)M 48 A TO-247 AD Type A O -^ T ‘ G 800 1200 1600 900 1300 1700 8 0 0 -1600 V CS 45-08io1 CS 45-12io1 CS 45-16io1 C = Cathode, A = Anode, G = Gate TAB = Anode Symbol Test Conditions

Contextual Info: a ix Y S CS 30 v RRM IT RMS Phase Control Thyristor T(AV)M V RSM V RRM V DSM V DRM V V 1200 1400 1600 1200 1400 1600 12 0 0 -1600 V 49 A 31 A TO-247 AD Type CS 30-12io1 CS 30-14io1 CS 30-16io1 C = Cathode, A = Anode, G = Gate TAB = Anode Maximum Ratings Symbol

pixy

Contextual Info: aixY S CS 20 v RRM Phase Control Thyristor V RSM V RRM V DSM V DRM V V 1200 1400 1600 12 0 0 -1600 V T RMS 30 A T(AV)M 19 A TO-247 AD Type Ao ( ^ l ) o C G 1200 1400 1600 CS 20-12io1 CS 20-14io1 CS 20-16io1 C = Cathode, A = Anode, G = Gate TAB = Anode Maximum Ratings

Contextual Info: REVISION E DSM-VT-X-XX-P Q SHELL SIZE/PDSITIDN -E-09 2 .7 7 + 0 .1 5 O O O D \ MOUNTING LACE -Rj! #4-40 Removable Jack Screws JS-03 Requires -TB or -BL -MJl Metric M3 Jack Screw (JS-04 for use with -MB anal -ML) Leave Blank Lor NO MOUNTING LACE OPTION

Contextual Info: DSM2180F3 DSM Digital Signal Processor System Memory for analog devices ADSP-218X family (5 V supply) NOT FOR NEW DESIGN FEATURES SUMMARY • Glueless Connection to DSP Figure 1. Packages – Easily add memory, logic, and I/O to DSP ) s ( t c u d o s) r

h13f

Abstract: AN1153
Contextual Info: DSM2180F3V DSM Digital Signal Processor System Memory for analog devices ADSP-218X family (3.3 V supply) NOT FOR NEW DESIGN FEATURES SUMMARY • Glueless Connection to DSP Figure 1. Packages – Easily add memory, logic, and I/O to DSP ) s ( t c u d o s)

TSMC 40nm

Abstract: TSMC 40nm layout issue cascode transistor array 90 nm CMOS Double high-speed switching diode EP4SE530 90-nm-FPGAs transistor gds
Contextual Info: Process-Design Co-Optimization for FPGA Qi Xiang Altera Corporation, 101 Innovation Drive, San Jose, CA 95134 Email: qxiang@altera.com Abstract Advancing field programmable gate array FPGA technology can be very challenging. Some of the major difficulties are power management and high-speed

ior e78996

Abstract: IR E78996
Contextual Info: INTERNATIONAL RECTIFIER bSE D m INR MÖ55452 DDlbEL.^ T74 Bulletin E27104 International 1»] Rectifier IRFK4H150.IRFK4J150 Isolated Base Power H E X -p ak Assembly - Parallel Chip Configuration High Current Capability. UL recognised E78996. Electrically Isolated Base Plate.

TF561S

Abstract: TF541S
Contextual Info: THYRISTORS Electrical Characteristics Absolute M axim um Ratings Repetitive Peak Non-Repetitive Off-State Peak Off-State Voltage Voltage T ,= -40°C to T „ s Rgk= 1k£î Mean On-State Current Surge On-State Current 50Hz Half-Cycle N on-Repetitive 50Hz Sinewave

d3000 mosfet

Abstract: analogue ohmmeter circuit diagram ZN490 transistor d3000 d3000 TL091 ZN451 ZN451E d3000 fet ZN451CJ
Contextual Info: ZN451E ZN451CJ 3% digit DVM 1C with external auto-zero FEATURES DESCRIPTION • External circuits may be included in the auto-zero loop • Full-scale reading '1.999mV or lower • Measures sum or difference of two inputs • Digital auto-zero with guaranteed zero

scr C35

Abstract: 2N683 2N690 2N681-2N692 2N688 2n692 2N681 2N682 FREEPORT 2N684
Contextual Info: Semitronics Discrete Semiconductors C35 Series: 2N681-2N692 Description Phase Control SCR 16 Amperes / 25-800 Volts Silicon Controlled Rectifiers SCR are reverse blocking triode thyristor semiconductor devices designed for power switching and phase control

Contextual Info: 2SK2652-01 FU JI N-channel MOS-FET 900V FAP-IIS Series > Features - 6A 2,5Q 125W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications

2SK2518-01MR

Contextual Info: F U J I Q a U iM E irtJ tìU K N-channel MOS-FET o,i3n 2 0 A 50W 20 0V 2 S K 2 5 1 8 -0 1 M R FAP-IIA Series > Features - > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee

MOSFET 300V

Abstract: 300V series regulators
Contextual Info: FUJI 2SK2469-01MR N-channel MOS-FET FAP-II Series 300V > Features - IQ 5A 30W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators

MI15

Abstract: pulse te
Contextual Info: FU JI 2SK2770-01 N-channel MOS-FET FAP-IIS Series 900V > Features - 5,5 0 , 3,5A 100W Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Repetitive Avalanche Rated TO-3P Applications

Contextual Info: FU JI 2SK2522-01MR N-channel MOS-FET 200V o,i8a 18A 40 W FAP-II Series > Features - > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators

Contextual Info: C O N V E R T E R G R A D E T H Y R IS T O R Voltage Ratings C R 121 U, M and F Series lT A V 8 5 °C = 1 2 0 A It s m = 2 5 0 0 A l2t = 3 0 .0 0 0 A 2se c RATINGS AND CHARACTERISTICS J I I 500 I_ I I 1000 I I_I 1500 I I I_ I I UNIT 2000 I V rsm

Contextual Info: FU JI a t a i E i r t e u e 2SK1945-01 L,S N-channel MOS-FET FAP-IIA Series 900V > Features - 2,8£2 5A 80W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V g s = ± 30V Guarantee Avalanche Proof

Abb breakover diode

Abstract: snubber IGCT
Contextual Info: S Y M B O L S Symbol Description C s Snubber capacitance Fm Mounting force lc IGBT Nominal Collector current U avm Max. average forward current 180c sine wave IfS M Max. surge peak forward current for a 180° sine wave; no voltage reapplied after surge I rm

an1171

Abstract: ADSP-2191 DSM2190F4 DSM2190F4V PLCC52 PQFP52
Contextual Info: DSM2190F4V DSM Digital Signal Processor System Memory For Analog Devices ADSP-2191 DSPs (3.3V Supply) FEATURES SUMMARY • Glueless Connection to DSP Figure 1. Packages – Easily add memory, logic, and I/O to the External Port of ADSP-2191 DSP ■ Dual Flash Memories

an1171

Abstract: adsp 2186 instruction set AD14 ADSP-218X DSM2180F3 PLCC52 PQFP52 AD11 AD12
Contextual Info: DSM2180F3 DSM Digital Signal Processor System Memory For Analog Devices ADSP-218X Family (5V Supply) FEATURES SUMMARY • Glueless Connection to DSP Figure 1. Packages – Easily add memory, logic, and I/O to DSP ■ 128K Byte Flash Memory – For Bootloading and/or Data Overlay Memory