A 720 TRANSISTOR Search Results

Contextual Info: User's Guide SLUU669 – January 2012 QFN-Packaged bq24165/166/167EVM-720 Evaluation Modules The bq24165/166/167EVM-720 evaluation module is a complete charger module for evaluating a compact, flexible, high-efficiency, USB-friendly, switch-mode, charge-management solution for single-cell,

Contextual Info: – T H E C H A L L E N G E R I N B U I L D I N G A U T O M A T I O N R E G I N – T H E C H A L L E N G E R I N B U I L D I N G A U T O M A T I O N Box 116, S-428 22 Kållered, Phone: +46 31 720 02 00 info@regin.se Sweden Fax: +46 31 720 02 50 www.regin.se

Contextual Info: 2SK3565 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOSIV 2SK3565 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 2.0 (typ.) High forward transfer admittance: |Yfs| = 4.5 S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)

Contextual Info: 2SK3798 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOSIV 2SK3798 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 2.5 (typ.) High forward transfer admittance: |Yfs| = 2.8 S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)

Contextual Info: 2SK3742 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type -MOSIV 2SK3742 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 2.2 (typ.) High forward transfer admittance: |Yfs| = 3.5 S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)

2SK3566

Contextual Info: 2SK3566 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOSIV 2SK3566 Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 5.6 (typ.) High forward transfer admittance: |Yfs| = 2.0 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 720 V)

BD722

Abstract: BD720 B0719 BD440 BD719 BD724 BD726 transistor 3bs NPN, Si, POWER TRANSISTOR, PLASTIC
Contextual Info: BD720 BD722 BD724 BD726 J SILICON EPITAXIAL-BASE POWER TRANSISTOR PNP transistor in a S O T3 2 plastic envelope intended fo r use in audio output and general purpose am plifier applications. BD 720 is equivalent to BD 440. NPN complements are B D 719; 721; 723 and

cq24-000

Abstract: Q24060 98l18
Contextual Info: Sfe- -<•' m2 DEVICE SPECIFICATION SERIES BiCMOS LOGIC ARRAYS Q24000 DESCRIPTION The AMCC Q24000 Series of BiCMOS logic arrays is comprised of six products with densities ranging from 720 to 13440 equivalent gates including a structured array with a high performance Phase-Locked Loop*.

Contextual Info: 2SK3473 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOSIV 2SK3473 Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.3 (typ.) High forward transfer admittance: |Yfs| = 6.5 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 720 V)

transistor K3564

Contextual Info: 2SK3564 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOSIV 2SK3564 Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 3.7 (typ.) High forward transfer admittance: |Yfs| = 2.6 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 720 V)

Application of irf 720

Abstract: irf ballast IRF 720 IRF722FI
Contextual Info: SCS-THOMSON IRF 720/FI-721/FI IRF 722/FI-723/FI * it,. M»IHi gTïïMSD(g§ N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE VDSS ^DS(on IRF720 IRF720FI 400 V 400 V 1.8 fi 1.8 0 'd " 3.3 A 2.5 A IRF721 IRF721FI 350 V 350 V 1.8 n 1.8 fi 3.3 A 2.5 A

J722

Abstract: IRF722FI 721F 723 voltage regulator internal diagram IRF720 IRF720FI IRF721 IRF721FI IRF722 IRF723
Contextual Info: 3DE D • 7^537 DQER7ÖC 1 S ■ ' ' T 73 c^ - \ \ / w T SGS-THOMSON S g S-THOMSON ' IRF 720/FI-721/FI IRF 722/FI-723/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE Vqss ^DS on IRF720 IRF720FI 400 V 400 V 1.8 fi 1.8 fi 3.3 A 2.5 A IRF721 IRF721FI

LXY Series

Abstract: mitsubishi microcomputers 4-bit 20P2N-A M34250E2FP M34250E2-XXXFP M34250M2 M34250M2-XXXFP PU01 f1813
Contextual Info: MITSUBISHI MICROCOMPUTERS 4250 Group SINGLE-CHIP 4-BIT CMOS MICROCOMPUTER DESCRIPTION The 4250 Group is a 4-bit single-chip microcomputer designed with CMOS technology. Its CPU is that of the 720 series using a simple instruction set. The computer is equipped with one 8-bit

Contextual Info: UNCONTROLLED DOCUMENT PART REV. NUMBER O E D - S T - 1 MLAR2 REV. A E.C.N. NUMBER AND REVISION COMMENTS DATE E.C.N. #1 OB RPR. & REDRAWN IN 3D. 5.30.03 ELECTRO-OPTICAL CHARACTERISTICS TA = 2 5 'C PARAMETER MIN TYP MAX UNITS SPECTRAL SENSITIVITY 720 940 1050

a2725

Contextual Info: 720/25 HARRI D escription • W ide P rogram m ing R a n g e HA-2720/2725 programmable amplifiers are internally compensated monolithic devices offering a wide range of performance, that can be controlled by adjusting the circuits’ 'set' current Os e t - B y means of adjusting an

Contextual Info: • 4305271 0QS4513 720 ■ 3 3 H A R R HAS IS 2 6 8 9 7 P-Channel Enhancement-Mode Power MOS Field-Effect Transistors A u g u s t 1991 Features • N Package TO-204AA BOTTOM VIEW -1 2 A , -1 0 0 V * rD S on = 0 -3 n SOURCE • S O A is P o w e r-D is sip atio n Lim ited

CA3039

Abstract: 10 DC-1 diode CA3039M CA3039M96
Contextual Info: HA RR IS S E M I C O N D S E C T O R blE D 43G2271 O D M b n i 720 IHAS CA3039 fUfU! H A R R IS S E M I C O N D U C T O R Diode Array March 1993 Features Description • Six Matched Diodes on a Common Substrate The CA3039 consists of six ultra-fast, low capacitance

mc10116

Abstract: MC10116 application MC10124 application MC10125 application MC10125 MC10128 AN-720 MC10124 MC10129 MCI650
Contextual Info: Order this document by AN720/D AN-720 Application Note c INTERFACING WITH MECL 10,000 INTEGRATED CIRCUITS Prepared b y Bill Blood A p p lic a tio n s Engineering c T his M ECL a rticle circu its describes used to some of in te rfa c e the w ith signals n o t m eeting M E C L in p u t or o u t­

HA2720

Abstract: HA-2725 HA-2720 HA2725 ha1272 ha22720 transistor code 458 055 HA2-2720
Contextual Info: 720/25 HARRI Description • Wide Programming Range H A -2 7 2 0 /2 7 2 5 prog ra m m a ble am plifiers are internally co m pe n sa te d m o n o lith ic device s o ffe rin g a w id e range of perform ance, th a t can be co ntro lle d b y a djusting the c irc u its ' 'set' c u rren t Is e t - B y m eans o f adju stin g an

B 722 P

Abstract: BB 722 DC DC BB 722
Contextual Info: SIEMENS NPN Silicon High-Voltage Transistors • Suitable for video output stages in TV sets and switching power supplies • High breakdown voltage • Low collector-emitter saturation voltage • Low capacitance BF 720 BF722 • Complementary types: BF 721/723 PNP

ABE 721

Contextual Info: SIEMENS NPN Silicon High-Voltage Transistors BF 720 BF 722 • Suitable for video output stages in TV sets and switching power supplies • High breakdown voltage • Low collector-emitter saturation voltage • Low capacitance • Complementary types: BF 721/723 PNP

B 722 P

Abstract: f1306
Contextual Info: NPN Silicon High-Voltage Transistors BF 720; BF 722 Suitable for video output stages in TV sets and switching power supplies High breakdown voltage Low collector -emitter saturation voltage Low capacitance Complementary types: BF 721/723 PNP Type M arking

C2060

Abstract: 2060D c3075
Contextual Info: Photo Transistors T yp e No. TPS601A TPS603A TPS604 Features TO -18 with lens can <t>3 T0-18(with lenscanand base) Max mum Ratings (Ta= 25°C) Collector Emitter Voltage Collector Power Dissipation Operating Temperature (m W ) (V ) CC ) 40 150 —40~+125

Contextual Info: 3SE D • 0231*320 G01b7b2 7 « S I P NPN Silicon High-Voltage Transistors BF 720; BF 722 _SIEMENS/ SPCL-, SEMICONDS T - 33- OS' Suitable for video output stages in TV sets and switching power supplies High breakdown voltage Low collector -emitter saturation voltage