A 4X TRANSISTOR Search Results

QVE00033

Contextual Info: Transmissive Opto Sensors Surface Mount Switch 2 mm Gap Analog – High Resolution 0.016 (0.40) 0.079 (2.00) 0.159 (4.05) 0.099 (2.50) 0.020 (0.50) (4X) SECTION "A-A" 0.276 (7.00) 0.240 (6.10) "A" 0.146 (3.70) 0.213 (5.40) DIMPLE 0.010 (0.25) (4X) "A" 0.295 (7.50)

transistor 2x

Abstract: 55JT 010US d 686
Contextual Info: 2X 0 STYLE 1: PIN 1 = COLLECTOR 2X 2 = BASE (4X ) 3 = EMITTER (2X ) STYLE 2: PIN 1 = COLLECTOR (2X ) 2 = EMITTER (4X ) 3 = BASE (2X ) DIM MILLIMETER A 9.1 4 B 12.70 s 2X K TOL .13 .13 INCHES .360 .500 .03 .05 TOL .005 .005 +.001 -.002 .005 .005 .005 .005

HL-94V-0

Abstract: HL94V-0 QVE00033 slotted optical switch OPTICAL INTERRUPTER SWITCH
Contextual Info: PHOTOTRANSISTOR OPTICAL SURFACE MOUNT INTERRUPTER SWITCH PRELIMINARY QVE00033 PACKAGE DIMENSIONS 0.016 0.40 center of light path 0.079 (2.00) 0.049 (1.25) 0.159 (4.05) 0.165 (4.2) 0.099 (2.50) 0.020 (0.50) (4X) SECTION "A-A" 0.276 (7.00) 0.240 (6.10) "A"

AJT150

Abstract: ASI10548
Contextual Info: AJT150 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .400 2L FLG A The ASI AJT150 is a common base RF power transistor primarily designed for pulsed avionics applications such as, mode-s TCAS and JTIDS. A 4x .062 x 45° 2xB C F E D G 2xR FEATURES:

ASI10648

Abstract: TVU020
Contextual Info: TVU020 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TVU020 is Designed for PACKAGE STYLE .400 BAL FLG A FEATURES: A B FULL R 4X.060 R • Input Matching Network • • Omnigold Metalization System C E P D F H K MAXIMUM RATINGS 11.0 A VCBO 60 V

70910

Abstract: transistor cny CNY17F-1X E91231
Contextual Info: ISOCOM COMPONENTS LTD HôfibSlO QQQOSSM 4 • ISO 45E D CNY 17F-1X, CNY 17F-2X, CNY 17F-3X, CNY 17F-4X is OPTICALLY COUPLED ISOLATOR NON-BASE LEAD TRANSISTOR OUTPUT DESCRIPTION The CNY 17 is a optically coupled isolator consisting of a Gallium Arsenide infrared emitting diode and a

Contextual Info: AJT015 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .310 2L FLG DESCRIPTION: A 4x .062 x 45° The ASI AJT015 is a silicon bipolar power transistor designed for avionics applications including JTIDS in 960-1215 MHz band. ØE D F G H I FEATURES: M MINIMUM inches / mm

AM82731-003

Abstract: TRANSISTOR RF 1003 333p
Contextual Info: AM82731-003 NPN RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE 400 2NL FLG The AM82731-003 is a Common Base Device Designed for Pulsed SBand Radar Pulse Driver Applications. A FEATURES INCLUDE: .025 x 45° 4x .062 x 45° 2X B • Input/Output Matching • Gold Metallization

AM82731-001

Abstract: 395 transistor TRANSISTOR RF 1003 m 052
Contextual Info: AM82731-001 NPN RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE 400 2NL FLG The AM82731-001 is a Common Base Device Designed for Pulsed SBand Radar Amplifier Applications. A FEATURES INCLUDE: .025 x 45° 4x .062 x 45° 2X B • Input/Output Matching • Gold Metallization

j48 transistor

Abstract: TRANSISTOR j4 ASI10545 AJT015
Contextual Info: AJT015 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .310 2L FLG DESCRIPTION: A 4x .062 x 45° The ASI AJT015 is a silicon bipolar power transistor designed for avionics applications including JTIDS in 960-1215 MHz band. ØE D F G H I FEATURES: M MINIMUM inches / mm

AVD400

Abstract: ASI10567 818 transistor
Contextual Info: AVD400 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .400 2L FLG A The ASI AVD400 is a silicon NPN power transistor, designed for high power and low duty cycle DME and IFF applications. A 4x .062 x 45° 2xB .040 x 45° C F E D G FEATURES: I

AVF450

Abstract: D 1803 TRANSISTOR TRANSISTOR 1003 1034 transistor TACAN ASI10575 395 transistor transistor b 1166
Contextual Info: AVF450 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .400 2L FLG A The ASI AVF450 is a high power common base bipolar transistor. It is designed for pulse applications for TACAN in 1030-1-90 MHz band. A 4x .062 x 45° 2xB C F E D G I FEATURES:

ARU300

Abstract: ASI10549 AUR300
Contextual Info: AUR300 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The AUR 300 is Designed for Class C UHF Radar Applications up to 500 MHz. PACKAGE STYLE .400 BAL FLG A A B FULL R FEATURES: 4X.060 R C • Internal Input Matching Network • PG = 9.5 dB at 300 W/500 MHz

Contextual Info: AUR500 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .400 BAL FLG A The AUR 500 is designed for high peak power & low duty cycle applications, in the 400-500 MHz. A B C C FULL R 4X.060 R B E P D FEATURES: • Internal Input Matching Network

AM1214-300

Contextual Info: AM1214-300 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .400 2L FLG A The ASI AM1214-300 is Designed for 1200 – 1400 MHz, L-Band Applications. A 4x .062 x 45° 2xB C F E D FEATURES: G • Internal Input/Output Matching Network • Common Base

RX1214B300Y

Contextual Info: RX1214B300Y NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .400 2L FLG A DESCRIPTION: A 4x .062 x 45° The ASI RX1214B300Y is Designed for 1200 – 1400 MHz, L-Band Applications. .040 x 45° 2xB C F E D G FEATURES: I • Internal Input/Output Matching Network

AM1214-300

Contextual Info: AM1214-300 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .400 2L FLG A The ASI AM1214-300 is Designed for 1200 – 1400 MHz, L-Band Applications. A 4x .062 x 45° 2xB C F E D FEATURES: G • Internal Input/Output Matching Network • Common Base

Contextual Info: AUR500 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .400 BAL FLG A The AUR 500 is designed for high peak power & low duty cycle applications, in the 400-500 MHz. A B C C FULL R 4X.060 R B E P D FEATURES: • Internal Input Matching Network

AUR500

Abstract: ASI10550
Contextual Info: AUR500 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The AUR 500 is Designed for UHF Radar and Pulsed signal apps PACKAGE STYLE .400 BAL FLG A A B FEATURES: FULL R 4X.060 R • Input Matching Network • • Omnigold Metalization System C E P D F H K J

AM81214-300

Abstract: AM81214-30 k 118
Contextual Info: AM81214-300 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .400 2L FLG A The ASI AM81214-300 is Designed for 1200 – 1400 MHz, L-Band Applications. A 4x .062 x 45° 2xB C F E D FEATURES: G • Internal Input/Output Matching Network • Common Base

ASI10549

Abstract: AUR300
Contextual Info: AUR300 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The AUR 300 is Designed for PACKAGE STYLE .400 BAL FLG A A B FEATURES: FULL R 4X.060 R • Input Matching Network • • Omnigold Metalization System C E P D F H K J G I N MAXIMUM RATINGS L M 21.6 A

D 1803 TRANSISTOR

Abstract: 333 045 ALR175 transistor 1803
Contextual Info: ALR175 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .400 2L FLG A The ASI ALR175 is common Base transistor Designed for 1215 – 1400 MHz, L-Band Applications. A 4x .062 x 45° 2xB C F E D G FEATURES: L N 14 A PDISS 45 V TSTG -65 °C to +200 °C

ALR325

Abstract: ASI10516
Contextual Info: ALR325 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .400 2L FLG A A 4x .062 x 45° DESCRIPTION: 2xB .040 x 45° C The ASI ALR325 is Designed for F E D G FEATURES: I • Input Matching Network • • Omnigold Metalization System L N 18.75 A 55 V VCC PDISS

k 118

Abstract: AJT150 ASI10548 a 4x transistor
Contextual Info: AJT150 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .400 2L FLG A DESCRIPTION: A 4x .062 x 45° 2xB The ASI AJT150 is Designed for .040 x 45° C F E D FEATURES: G • Input Matching Network • • Omnigold Metalization System I L N 10 A 60 V VCB VCE