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Contextual Info: V630ME35 9939 Via Pasar • San Diego, CA 92126 TEL 858 621-2700 FAX (858) 621-2722 VOLTAGE CONTROLLED OSCILLATOR Rev A1 £(f) (dBc/Hz) PHASE NOISE (1 Hz BW, typical) FEATURES • Frequency Range: 2255 - 2358 MHz • Tuning Voltage: 0.5-4.5 Vdc • MINI-14S - Style Package

V630ME35

Contextual Info: V630ME35 VOLTAGE CONTROLLED OSCILLATOR 9939 Via Pasar • San Diego, CA 92126 TEL 858 621-2700 FAX (858) 621-2722 Rev A1 PHASE NOISE (1 Hz BW, typical) -60 FEATURES • Frequency Range: 2255 - 2358 MHz • Tuning Voltage: 0.5-4.5 Vdc • MINI-14S - Style Package

Contextual Info: THIS DRAWING IS C O P Y R IG H T U N P U B L IS H E D . RELEASED 19 BY AMP FOR ALL IN COR PO RA TE D. PUBLICATION RIGHTS 19 LOC RE SE R VE D . REVI SI ONS DI ST G 14 L TR DESCRIPTION REV P ER DWN APVD JR TM DATE 0G3A-0649-01 03DEC0 D S E R R A T IONS WI R E

Contextual Info: M61314SP I2C BUS Controlled Video Pre-amp for High Resolution Color Display REJ03F0200-0200 Rev.2.00 Sep 14, 2006 Description M61314SP is semiconductor integrated circuit for CRT display monitor. It includes OSD blanking, OSD mixing, retrace blanking, video detector, sync sepa, wide band amplifier.

thyratron tube 5c22

Abstract: circuit diagram induction heating induction heating schema 5c22 tube SCHEMA chauffage par induction Converter for Induction Heating thyratron 5c22 5C22 radar circuit modulator induction heating circuits
Contextual Info: PHILIPS 5C22 HYDROGEN THYRATRON, THYRATRON Â HYDROGENE //ASSERSTOFFTHYRATRON Application: Switching in line modulator circuits of mi­ crowave radar systems. The properties of the tube suggest other applications such as: frequency conversion high efficiency in­

M61314SP

Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

intel 4308

Abstract: XO-105 80376 29023
Contextual Info: INTEL CORP intel MEMORY/LOGIC 2QE D 4fl2bl?b OObb'iTG 5 O N O W IfflM O Q B O 27C203C FAST PIPELINED 256K (16K x 16) EPROM System Initialize Feature — Initialization Register Forces Startup Vector for State Machine Applications Hlgh-Performance/Low Power CMOS

Contextual Info: UniShield EPR 5-35 kV Power Cable UL Type MV-105 Performance Beyond Just Power UniShield ® Designed to be the best In the 1960s, a design team was given the task to develop an industrial MV cable that addressed the deficiencies of existing cable designs in use at that time. Called the Wabash Project, these

PTI 88

Contextual Info: rev. pa ge page 1 of 6 da t e date 09/2008 D ESCRI PTI ON : quart er- brick dc- dc convert er PART N UM BER: VQB100W features •100W isolated output ·Efficiency to 88% ·250 kHz switching frequency ·monotonic start-up ·input under-voltage protection ·over-temperature protection

Contextual Info: 2GB, 4GB x72, ECC, DR 240-Pin DDR3 SDRAM RDIMM Features DDR3 SDRAM RDIMM MT18JS(Z)F25672PDZ – 2GB MT18JS(Z)F51272PDZ – 4GB Features Figure 1: 240-Pin RDIMM (MO-269 R/C B) • DDR3 functionality and operations supported as defined in the component data sheet

Contextual Info: M ITEL _ S E M IC O N D U C T O R WL800 2.5GHz Frequency Synthesiser _ •■ ■ . x Prelim inary Inform ation DS4583 1.6 October1997 The WL800 is a low power single chip frequency synthesiser. The circuit is fabricated on Mitel Semiconductor HG process

Contextual Info: SN54116, SN74116 DUAL 4-BIT LATCHES WITH CLEAR DECEMBER 1972 —REVISED MARCH 1988 S N 5 41 1 6 . . . J OR W PACKAG E SN 74116 . . . N PACKAGE Two Independent 4-Bit Latches in a Single Package T O P V IE W [jr O 24 3 Vcc 2 3 ] 204 1C2 C 3 22 3 2D4 1D 1 O

ACT2802

Contextual Info: ACT2802 Demo Board Application Report Rev 2.0, 005-Aug-2014 Dedicated 5V/2.1A Power Bank Solution FEATURES  5V/3.0A input current limit  2.0A battery charge current  5V/2.1A boost output current  2.5A boost oost output constant current limit 

10DC IR 3 PINS

Abstract: ir 10DC vecon 7C187-15 7C187-20 CY7C187 CY7C187-25DC
Contextual Info: CYPRESS SEMICONDUCTOR 4bE D B 2SfiTbb2 GOObblB 7 CSCYP T ^ ,- 7 V Q S C Y 7C 187 Features Reading the device is accomplished by taldng the chip enable CB LOW, while write enable (WE) remains HIGH. Un­ der these conditions, the contents of the memoiy location specified on the address

Contextual Info: 16GB x72, ECC, DR 240-Pin DDR3 SDRAM LRDIMM Features DDR3 SDRAM LRDIMM MT36JSZF2G72LZ – 16GB Features Figure 1: 240-Pin LRDIMM (MO-269 R/C A) • 240-pin, load-reduced dual in-line memory module (LRDIMM) • Memory buffer (MB) • Fast data transfer rates: PC3-12800, PC3-10600,

ASY76

Abstract: CY7C187A JS14
Contextual Info: C Y P R ES S S E M I C O N D U C T O R ESö^bbS 0005023 3 4QE D 7 = & -2 3 -£ > r CYPRESS SEMICONDUCTOR A utom atic power-down when dese­ lected CM O S for optim um speed/pow er High speed - IS ns Low active power - 440 m\V Low stan d b y power - 220 mW

MT41K512M4

Contextual Info: 8GB, 16GB x72, ECC, DR 240-Pin 1.35V DDR3L LRDIMM Features 1.35V DDR3L SDRAM LRDIMM MT36KSZF1G72LZ – 8GB MT36KSZF2G72LZ – 16GB Features Figure 1: 240-Pin LRDIMM (MO-269 R/C A) • DDR3L functionality and operations supported as defined in the component data sheet

Contextual Info: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-11114-1E MEMORY Buffered 4 M x 72 BIT SYNCHRONOUS DYNAMIC RAM DIMM MB8504S072AD-100/-84/-67 200-pin, 1-bank, based on 4 M × 4 BIT SDRAMs with PLL • DESCRIPTION The Fujitsu MB8504S072AD is a fully decoded, CMOS Synchronous Dynamic Random Access Memory

DDR3 ECC SODIMM Fly-By Topology

Contextual Info: 2GB, 4GB, 8GB x72, ECC, DR 204-Pin DDR3L SODIMM Features 1.35V DDR3L SDRAM SODIMM MT18KSF25672HZ – 2GB MT18KSF51272HZ – 4GB MT18KSF1G72HZ – 8GB Features Figure 1: 204-Pin SODIMM (MO-268 R/C D – R/C D1) • DDR3L functionality and operations supported as

Contextual Info: 8GB, 16GB x72, ECC, QR 240-Pin 1.35V DDR3 RDIMM Features 1.35V DDR3 SDRAM RDIMM MT72KSZS1G72PZ - 8GB MT72KSZS2G72PZ - 16GB Features Figure 1: 240-Pin RDIMM (R/C F) • DDR3L functionality and operations supported as defined in the component data sheet • 240-pin, registered dual in-line memory module

Contextual Info: 16GB x72, ECC, DR 240-Pin DDR3 RDIMM Features DDR3 SDRAM RDIMM MT36JSF2G72PZ – 16GB Features Figure 1: 240-Pin RDIMM (R/C J1) • DDR3 functionality and operations supported as defined in the component data sheet • 240-pin, registered dual in-line memory module

M39024

Abstract: m39024 jack 6220-215-0 6220-215 M4274-166-9 M4825 tk 19 823 62202 BA 5979 la 4127
Contextual Info: Non-lnsulated Test Jacks ADVANCED INTERCONNECTIONS' 5 Energy Way, P.O. Box 1342, West Warwick, Rl 02893 • Tel. 401-823-5200 • FAX 401-823-8723 • TWX 9102403454 E M C Troduct "N IJ" Series For .025 .64 Dia. Probes For .014(^36) Dia. Probes T l \ G T

ic cir 2272

Abstract: cir 2272 CIR 2262 1117 ADC "Temperature Switch" 1878 DATASHEET 33 1004 2204 3 LM26LV LM26LVCISD LM26LVCISD-XPE
Contextual Info: LM26LV 1.6 V, LLP-6 Factory Preset Temperature Switch and Temperature Sensor General Description The LM26LV is a low-voltage, precision, dual-output, lowpower temperature switch and temperature sensor. The temperature trip point TTRIP can be preset at the factory to any

Contextual Info: M2F X 4G64CB88B7(H)N / M2F(X)8G64CB8HB5(9)N 4GB: 512M x 64 / 8GB: 1024M x 64 PC3-10600 / PC3-12800 Unbuffered DDR3 SDRAM DIMM Based on 512Mx8 SDRAM B-Die Features •Performance: Speed Sort PC3-10600 PC3-12800 PC3-12800 -CG -DG -DI Unit DIMM CAS Latency 9