A 1930 Search Results

TDK CORE

Contextual Info: Core T e c h n o l o g i e s / M a te ria ls T e ch n o lo g y P ro ce ss T e c h n o lo g y E v a lu a tio n & S im u la tio n T e c h n o lo g y Mafer/a/s rec/?no/off/ tms* TDK 1930 ip , e u t * # * » , ' - . /i * m±smk M e *a s a x f f i i > s M » A 5c * n s s

Contextual Info: 13 12 10 M A T E R IA L S A N D FIN IS H E S B ODY, C A P B R A S S PLATED GOLD 7 m CENTER C O NTACT BR ASS PLATED GOLD IN S U L A T O R T E F L O N REF CAP .120 .0 8 6 SEMI RIGID C A B L E AS-89678-3200 CABLE ASS Y INSTRUT. ES-73599-OOOO-015 INTERFACE PS-89675-1930

dioda rectifier

Abstract: westcode stud base diode SI 2 dioda pcr075
Contextual Info: ItL H H I^ A L W ESTCODE SEMICONDUCTORS P U B L IC A T IO N D P75 IS S U E t M e rih , 1930 Stud-Base Silicon Rectifier Diodes Type PCN/PCR075 75amperes average: up to 1600 volts R A T IN G S M a x im u m v a lu e s a t 1 7 5 ° C T j u n lo s s s ta te d o t h e r w is e

Contextual Info: Led Signalleuchten Einbaudurchm esser 14 mm Led Indicators Body diameter 14 mm Bestell-Nr. Farbe Part No. Colour V 1930*130 Rot Red Für 130 V A C und 230 V A C For 130 V A C and 230 V A C Vtyp. <mA) (V) (mcd) 110 135 47,0 1930*131 Grün Green 110 135 34,0

1920A05

Contextual Info: 1920A05 5 Watts, 26 Volts, Class A Personal 1930 - 1990 MHz GENERAL DESCRIPTION CASE OUTLINE The 1920A05 is a COMMON EMITTER transistor capable of providing 5 Watts of Class A, RF output power over the band 1930-1990 MHz. This transistor is specifically designed for PERSONAL COMMUNICATIONS

MRF6S19060N

Abstract: A113 A114 A115 AN1955 C101 JESD22 MRF6S19060NBR1 MRF6S19060NR1 AD250
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S19060N Rev. 3, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for N - CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L

A114

Abstract: A115 AN1955 C101 JESD22 MRF6S19100H MRF6S19100HR3 MRF6S19100HSR3
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S19100H Rev. 4, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for N - CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L

T491C105K0

Abstract: MA675
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S19100H Rev. 2, 6/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for N- CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S19100H Rev. 3, 8/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for N- CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L

T491X106K035AT

Abstract: A114 A115 AN1955 C101 JESD22 MRF6S19120HR3 MRF6S19120HSR3 Nippon capacitors Nippon chemi
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S19120H Rev. 2, 12/2008 N - Channel Enhancement - Mode Lateral MOSFETs MRF6S19120HR3 MRF6S19120HSR3 LIFETIME BUY Designed for N - CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L

T491C105K0

Abstract: mcr63v470m8x11 MRF6S19120H
Contextual Info: Freescale Semiconductor Technical Data MRF6S19120H Rev. 0, 2/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for N - CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L

Contextual Info: Freescale Semiconductor Technical Data Rev. 1, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S19100HR3 MRF6S19100HSR3 Designed for N - CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L

SAA 1251

Abstract: M193AB1 SAA1251 m193cb1 m193 M193C M193DB1 M193A 1251 saa TDA4431
Contextual Info: MOS INTEGRATED CIRCUITS M 19 3 A M 1J3C M 1930 EPM 1 6 - E L E C TR O N IC PR O G R A M M E M O R Y 16 S TA T IO N S • • • ONE CHIP SO LU TIO N IN C LU D IN G C O N TR O L A N D NON V O L A T . M EM O RY FOR 16 PROGR. 1 0 Y E A R S M E M O R Y R ETEN TIO N

MRF6S19120H

Contextual Info: Freescale Semiconductor Technical Data MRF6S19120H Rev. 0, 2/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for N - CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L

MRF6S19060N

Abstract: A113 A114 A115 AN1955 C101 JESD22 MRF6S19060NBR1 MRF6S19060NR1
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S19060N Rev. 4, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for N- CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L

A114

Abstract: A115 AN1955 C101 JESD22 MRF6S19100H MRF6S19100HR3 MRF6S19100HSR3
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S19100H Rev. 3, 8/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for N- CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L

A114

Abstract: A115 AN1955 C101 JESD22 MRF6S19120HR3 MRF6S19120HSR3
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S19120H Rev. 1, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for N - CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L

1920A12

Contextual Info: 1920A12 12 Watts PEP, 25 Volts, Class A 10 dB Gain Personal 1930 - 1990 MHz GENERAL DESCRIPTION CASE OUTLINE The 1920A12 is a COMMON EMITTER transistor capable of providing 12 Watts of Class A, RF output power over the band 1930-1990 MHz. This transistor is specifically designed for PERSONAL COMMUNICATIONS

1920A20

Contextual Info: R.B.063099 1920A20 20 Watts, 25 Volts, Class A 10 dB Gain Personal 1930 – 1990 MHz GENERAL DESCRIPTION The 1920A20 is a COMMON EMITTER transistor capable of providing 20 watts of Class A, RF output power over the band 1930-1990 MHz. This transistor is specifically designed for PERSONAL COMMUNICATIONS

TRANSISTOR SMD MARKING CODE 1d

Abstract: AVW smd transistor HP 2602 optocoupler marking WMG marking code H2E SMD optocoupler NAND SMD TRANSISTOR MARKING 1D TRANSISTOR SMD MARKING CODE B7 HCPL-1930 HCPL-1931
Contextual Info: M gI H EW LETT mUttm P A C K A R D Dual Channel Line Receiver Hermetic Optocoupler Technical Data HCPL-1930 HCPL-1931 HCPL-193K 5962-89572 F eatu res A pplications D escrip tion • Dual Marked w ith Device Part Number and DSCC Standard Microcircuit Drawing

Contextual Info: am IRC USA Sales Offices ALABAMA-RO Whitesell & Assoc., Inc. 3601 S M em orial Pkwy, Ste B Huntsville, AL 35801-5321 Phone: 205-883-5110 Fax: 205-862-9626_ _ ARIZONA_ SW Sales 1930 S A lm a School Rd Suite C -205 M esa, A Z 85210 Phone: 602-345-8080

GSM repeater circuit

Abstract: Rogers 4350 datasheet AN060 XD010-24S-D2F
Contextual Info: XD010-24S-D2F 1930-1990 MHz Class A/AB 12W CDMA Driver Amplifier Product Description Sirenza Microdevices’ XD010-24S-D2F 12W power module is a robust 2stage Class A/AB amplifier module for use in the driver stages of CDMA RF power amplifiers. The power transistors are fabricated using Sirenza’s

Mifare commands

Abstract: MIFARE Card IC Coil Design Guide MF1ICS70 CL RC632 application note AN MIFARE Card Coil Design Guide CONTACTLESS SMART CARD READER RC632 e purse nxp proximity antenna design RC632 CL RC632 UID
Contextual Info: MF1S7009 Mainstream contactless smart card IC for fast and easy solution development Rev. 3 — 26 July 2010 193031 Product data sheet PUBLIC 1. General description NXP Semiconductors has developed the MIFARE MF1S7009 to be used in a contactless smart card according to ISO/IEC 14443 Type A. The MF1S7009 features a double size

Contextual Info: an A M P com pany Surface Mount Voltage Controlled Oscillator PCS 1930 - 1990 MHz ML081100-01960 V3.00 Features LSM1 Package • M in ia tm e Size • • • • 4.0 Surface M o u n tP a ck a g e Electrically Shielded Low Phase N oise H ighly L inear Tuning