A 1184 Y Search Results

Contextual Info: 19-1184; Rev 1; 6/10 Low-Cost, Precision, High-Side Current-Sense Amplifier The MAX4172 is a low-cost, precision, high-side currentsense amplifier for portable PCs, telephones, and other systems where battery/DC power-line monitoring is critical. High-side power-line monitoring is especially useful in

Contextual Info: 19- 1184; R ev 0; 12/96 y p M x iy M Low-Cost, Precision, High-Side Current-Sense Amplifier To provide a high level of flexibility, the MAX4172 func­ tions with an external sense resistor to set the range of load current to be monitored. It has a current output that

Contextual Info: 19-1184; Rev 1; 6/10 Low-Cost, Precision, High-Side Current-Sense Amplifier _Features The MAX4172 is a low-cost, precision, high-side currentsense amplifier for portable PCs, telephones, and other systems where battery/DC power-line monitoring is critical. High-side power-line monitoring is especially useful in

MAX4172

Abstract: MAX4172ESA MAX4172EUA MAX4172-11
Contextual Info: 19-1184; Rev 1; 6/10 Low-Cost, Precision, High-Side Current-Sense Amplifier _Features The MAX4172 is a low-cost, precision, high-side currentsense amplifier for portable PCs, telephones, and other systems where battery/DC power-line monitoring is critical. High-side power-line monitoring is especially useful in

max4172

Contextual Info: 19-1184; Rev 1; 6/10 Low-Cost, Precision, High-Side Current-Sense Amplifier The MAX4172 is a low-cost, precision, high-side currentsense amplifier for portable PCs, telephones, and other systems where battery/DC power-line monitoring is critical. High-side power-line monitoring is especially useful in

MAX4172EUA

Abstract: rs-12v MAX4172 MAX4172ESA
Contextual Info: 19-1184; Rev 0; 12/96 Low-Cost, Precision, High-Side Current-Sense Amplifier The MAX4172 is a low-cost, precision, high-side currentsense amplifier for portable PCs, telephones, and other systems where battery/DC power-line monitoring is critical. High-side power-line monitoring is especially useful in

ULA1U

Abstract: digilin ULA2G ULA1G
Contextual Info: A R R A Y S : TH E U LA PRODUCT DATA S U M M A R Y - ULA DIGILIN ARRAYS A rray Type Gate Count ULA1G 100 ULA1L 150 ULA2G 160 1.9 ULA1U 280 3.4 676 741 14 to 40 ULA2L 340 200.0 715 1205 14 to 40 ULA2M 500 0.4 1184 968 14 to 40 14 to 40 Gate Power jjW No. o f Active

transistor B 1184

Abstract: 2SD1762 b 1185
Contextual Info: Transistors Power Transistor 50V, 3A 2SD1760/2SD1864/2SD1762 •F e a tu re s 1) ^External dim ensions (Units: mm) LOW VcE(sat). VcE(sat) = 0.5V (Typ.) (Ic / I b = 2A/0.2A) 2) Com plem ents the 2S B 1184/2S B 1243/2S B 1185. • S tru c tu re Epitaxial planar type

B1133

Abstract: B 1184 J1311 W/CDBM MARTA
Contextual Info: REVISIONS L TR DESCRIPTION SEE PACKAGE XI D E S I GNATOR A B C D E F G H J K L M N P R S T U V w X Y 2 3 4 5 6 XI PACKAGE WI DTH ±30/£m 777 803 828 853 879 904 930 955 980 1006 1031 1057 1082 1107 1 133 1 1 58 1184 1209 1234 1260 1285 1311 1336 1361 1387

w1869

Abstract: S-1768
Contextual Info: REVISIONS L TR DESCRIPTION SEE PACKAGE XI D E S I GNATOR A B C D E F G H J K L M N P R S T U V XI PACKAGE WI DTH ±30/£m 1006 1031 1057 1082 1107 1 133 1 1 58 1184 1209 1234 1260 1285 1311 1336 1361 1387 1412 1438 1463 1488 X2 D E S I GNATOR A B C D E F G

ltj2

Contextual Info: □ Mini-Circuits UlTRÆRUIWXBiS 5-YR. G U A R A N T E E * LEVEL 23S + 23 dBm LO, up to +20 dBm RF 100 KHz to 2.4 GHz MODEL NO. FREQUENCY MHz CONVERSION LOSS dB LO/RF Mid-Band m Max. IF 4.85 10-2400 .01-500 .01-500 5-1000 0.1-500 0.1-1000 10-2400 .01-500

56YY30018

Contextual Info: PRODUCT ADVISORY NOTICE KEEPING YOU INFORMED OF PRODUCT CHANGES To: All Customers, Sales Representatives and Distributors Date: April 19, 2012 Subject: Manufacturing Location Change This Product Advisory Notice is to alert you that Grayhill is relocating certain machines and tooling from

tlb176

Abstract: ANA 658 2197S transistor 1052 marking code H02 HD12E TRANSISTOR 2SK 1180 Hitachi DSA00276
Contextual Info: Hitachi Single-Chip Microcomputer H8S/2199R Series H8S/2199R HD6432199R H8S/2198R HD6432198R H8S/2197R HD6432197R H8S/2197S HD6432197S H8S/2196R HD6432196R H8S/2196S HD6432196S H8S/2199R F-ZTAT HD64F2199R ADE-602-232 Rev 1.0 02/23/01 Hitachi, Ltd. Hardware Manual

c 828

Abstract: k 1006 MO-211 C-828 C828 B803 A777 C828C um 1082
Contextual Info: R E V I S I O N S LTR DESCRIPTION E.C.N. DAT E A B R E L E A S E TO D O C U M E N T C O N T R O L A D D " D " J " 4 5 0 " TO TABLE AT X3 COLUMNS D I M 0 . 1 2 5 / 0 . 0 5 WAS 0 . 0 6 / 0 . 0 4 ; F L A TTE N BUMP H E I G H T B Y 0 . 0 0 5 m m ; X 3 T O L 1 0 0 WAS 5 0 .

1SS337

Abstract: SC-59 marking 1F
Contextual Info: 1SS337 SILICON EPITAXIAL PLANAR TYPE ULTRA HIGH SPEED SWITCHING APPLICATION. . Small P ackage . Low Forward Voltage . Fast Re v e r s e RecoveryTime . U n i t in m m + 0-5 25-0.3 + 0.25 1.5-0.15, : SC-59 : V p = 0 .8 8 V T y p . : Small Total Capacitance

HD4074344S

Abstract: HD4074318S h4052 HD40482 42 pin microprocessor VFD drive 4K CODE h4334 H4652 LED DRIVER working of digital watch
Contextual Info: hitachi h8/400 29.10.1998 10:38 Uhr Page 3 N ov e mb e r H 4 0 0 4 - B i t 1 9 9 8 S e r i e s M i c r o c o n t r o l l e r s WHAT’S NEXT? 1 1 - 0 0 4 H hitachi h8/400 29.10.1998 10:38 Uhr Page 5 H400 Series INDEX 4-bit microcontrollers Welcome 2 CPU and peripherals

2SA1301 TOSHIBA

Abstract: da 1191 2sa970 Toshiba 2SB754 2SA904A 2SA1038 2Sa1173 2SA1323 2SB646 2SA1782
Contextual Info: - 24 Si - tt « € Manuf- B S 5 a a h h = SANYO » 2SA1115 * TOSHIBA $ m b NEC ÍL HITACHI 1onn 2SA1782 2SA1048 2SA1782 2SA1048CL 3t 3? X 3Ë K «£ « T -y-viry 0 3Ï 0 ÍL B ÍL 0 ÍL 2SA1249 2SA1162 2SA1337 2SA1220A 2SA812 ZSB631K 2SB827 2SB817 2SA1207

Contextual Info: HB56A464EJ Series 4,194,304-word x 64-bit High Density Dynamic RAM Module HITACHI ADE-203-438 Z Rev. 0.0 Jul. 24, 1995 Description The HB56A464EJ belongs to 8 byte DIMM (Dual In-line Memory Module) family, and has been developed as an optimized main memory solution for 4 and 8 Byte processor applications.

ET 1104

Contextual Info: HB56A464EJ Series 4,194,304-word x 64-bit High Density Dynamic RAM Module HITACHI ADE-203-438 Z Rev. 0.0 Jul. 24, 1995 Description The HB56A464EJ belongs to 8 byte DIMM (Dual In-line Memory Module) family, and ha$ been developed as an optimized main memory solution for 4 and 8 Byte processor applications.

Contextual Info: Philips Sem iconductors • bbS 3131 □□33131a 730 M AD Y Product specification NPN 2 GHz wideband transistor — BFW30 N AMER PHILIPS/DISCRETE DESCRIPTION bTE D PINNING NPN transistor in a TO-72 metal envelope, with insulated electrodes and a shield lead connected to the

2N1183

Abstract: 2N1183A 2N1184B 2N1184 2N1183B 2N1184A BF 331 TRANSISTORS
Contextual Info: Mi L - S - l 9500/143B EL 22 JUNE 19o6 A*I IM>r\r*f*r\ ik. i ^ ¿UrCKdCUIINl^ kAit -C -io n// /Mi T^/nyuu; 'JA /i:! \ I /sn jva 30 December 1963 M ILIT A R Y S P E C IF IC A T IO N S E M IC O N D U C T O R D E V IC E , TRA N SISTO R , P N p, G ER M A N IU M

MO-211

Abstract: C828 1031L 438H
Contextual Info: REVIS PKG SYMM £ REV A — IONS D E S C R 1P T I O N RELEASE TO DO CUME NT BY/APP'D E .C .N. DATE 607 03/15/2002 C O NT ROL MS/VA 0.5 DIMENSIONS ARE IN MILLIMETERS NOTE 3 LAND PATTERN RECOMMENDATION NOTES: UNLESS 1 . E P OX Y OTHERWI S E 0 . 001 SPECIFIED

iskra diode

Abstract: 1N1198 Diode HD84A ISKRA HDF82A iskra diodes 1N1202 DIODE ISKRA Iskra Semic K 3673
Contextual Info: ISKRA SEMIC CAPS IND 37E Sili c ^ p o D 4ÖÖ3477 reöCilili ODOll^ 6 A, 12 A, 20 A, 35 A If a v ^case T yp e = <V (V) 1N 1341 B 1 N 13 42 B 1N 1344B 1 N 13 46 B 1N 1348B 1 N 39 88 1N 39 9 0 50 100 2 00 4 00 6 00 8 00 1 00 0 60 120 240 480 720 1 000 1 200

A44E

Abstract: n3903 N1183A IN1188 A139 1N1183A-90A 1N3909-13 1N5332 A40F 1N1190 JANTX
Contextual Info: FAST R E C O V E R Y R E C T IF IE R S S E L EC T O R GUIDE 2000 1500 1000 900 600 « 700 !j 6 0 0 § 500 s z 400 5 300 § 200 H _l O > fOO 90 80 70 60 50 I 3 6 12 20 25 30 100 140 2 5 0 4 0 0 750 IK AVERAGE CURRENT-AMPERES S T A N D A R D R E C T IF IE R S SE L EC T O R GUIDE