YG911S3 Search Results

YG911S3

Contextual Info: YG911S3 5A • Outline Drawing l o w l o s s s u p e r h ig h s p e e d r e c t i f i e r ■ Features • Insulated package by fully overmolding • Lo w V f • Super high speed switching • High reliability by planer design ■ Applications • High speed power switching

yg311s6

Abstract: ilpi 031
Contextual Info: - 90- « B W06C W09A W09B W09C YG311S5 YG911S2 YG911S3 YG912S2 YG912S6 & B ÍL B aL B ÍL s ä ä ± *h Vr s m V rr m V (V) * Vr IFM (V) (A) s <°C) (A) 250 100 150 250 600 200 50 100 200 600 0. 0. 0. 0. 4 300 200 6QQ 200 300 200 600 5 5 10 10 75 6 6 6

power Diode 200V 10A

Abstract: Diode C91 02 c91 02 high power rectifier diode single 200v 30A schottky C91 diode "Power Diode" 200V 30A 30A, 600v RECTIFIER DIODE TO-220F15 diode 10a 400v
Contextual Info: Low-loss Fast Recovery Diodes LLD Single Device Type CB903-4 CB903-4S ERA91-02 ERA92-02 ERB91-02 ERB93-02 ERC90-02 ERC91-02 KS926S2 SC902-2 YG911S2R YG911S3R YG912S2R YG912S6 Features LOW LOSS SUPER HIGH SPEED RECTIFIER LOW LOSS SUPER HIGH SPEED RECTIFIER

YG911S2R

Abstract: IF-10A
Contextual Info: tf —K / Rectifier Diodes • I S l i ^ ^ if iii 5?"-f —K Low-Loss Fast. Recovery Diodes LLDi 1 in one-package MX Device type ERA91-02 ERB91-02 CB903-4 ERA92-02 SC902-2 ERB93-02 ERC91-02 KS926S2 ERC90-02 YG911S2R YG911S3R YG912S2R YG912S6R TS912S6R M i l « M B + C ft

YG911S3R

Abstract: A173
Contextual Info: YG911S3R 300V / 5A TO-22OF15 Outline Drawings LOW LOSS SUPER HIGH SPEED DIODE 4.5±0.2 +0.2 10.5±0.5 ø3.2 -0.1 1.2±0.2 13Min 3.7±0.2 Features 15±0.3 2.7±0.2 6.3 2.7±0.2 0.7±0.2 Low VF Super high speed switching. High reliability by planer design.

Contextual Info: YG911S3R 300V / 5A TO-22OF15 Outline Drawings LOW LOSS SUPER HIGH SPEED DIODE 4.5±0.2 +0.2 10.5±0.5 ø3.2 -0.1 1.2±0.2 13Min 3.7±0.2 Features 15±0.3 2.7±0.2 6.3 2.7±0.2 0.7±0.2 Low VF Super high speed switching. High reliability by planer design.

Contextual Info: YG911S3 5A • Outline Drawing l o w lo s s s u p e r high speed r e c t i f i e r ■ Features • Insulated package by fully overmolding • Lo w V f • Super high speed switching • High reliability by planer design ■ Applications • High speed power switching

Contextual Info: YG911S3R 300V / 5A TO-22OF15 Outline Drawings LOW LOSS SUPER HIGH SPEED DIODE 4.5±0.2 +0.2 10.5±0.5 ø3.2 -0.1 1.2±0.2 13Min 3.7±0.2 Features 15±0.3 2.7±0.2 6.3 2.7±0.2 0.7±0.2 Low VF Super high speed switching. High reliability by planer design.

diode 10a 400v

Abstract: TO-220F15 CB903-4 CB903-4S ERA91-02 ERA92-02 ERB91-02 ERB93-02 erb93 diode ERC91-02
Contextual Info: Low-loss Fast Recovery Diodes LLD Single Device Type CB903-4 CB903-4S ERA91-02 ERA92-02 ERB91-02 ERB93-02 ERC90-02 ERC91-02 KS926S2 SC902-2 YG911S2R YG911S3R YG912S2R YG912S6 Features LOW LOSS SUPER HIGH SPEED RECTIFIER LOW LOSS SUPER HIGH SPEED RECTIFIER

6DI15S-050

Abstract: 1MB1400N-120 6D130Z-120 ENC471 2sk2850 2sk2761 ESJA58-06A 1MBH-60D 1mbh60d-090a 6DI15S050
Contextual Info: fl^ Ä f^ l/T y p e Number Index Page Page Page Page Page Page 1D500A-030 1DI200E-055 1DI200K-055 1DI200M-120 1DI200MA-050 1DI200Z-100 12 17 17 14 13 15 1MBH15D-120 1MBH20D-060 1MBH25-120 1MBH25D-120 1MBH30D-060 1MBH50-060 19 19 19 19 19 19 2DI75Z-120 2DI75Z-140

ET412

Abstract: 2SK1217 2SK2850 ESAB92M-02N 2SK2879 2SK2765 2SK2645 2SK1916 2sk2645 MOSFET 2sk1082
Contextual Info: / Discontinued Types 9. S! Descciptien / ' f ' 7 - MOSFET Power MOFET O w c o n t& n je d ty p e ItW B S W P Â R e p la c a d typ e 2SK1009 2SK1010 2SK1011 2SK1012 2SK1015 2SK2871 2SK2875 2SK2639 2SK2641 2SK2755 2SK1016 2SK1023 2SK1024 2SK1082 2SK2643 2SK2646

esab34

Abstract: yg906
Contextual Info: FAST RECOVERY DIODES 200 -1000Volts 200 - 300VOLTS PACKAGE Part Number lo A 400-500 VOLTS ÜT nS Part Number 600-800 VOLTS lo (A) trr nS Part Number 1000 VOLTS lo (A) trr nS SG201-2 0.5 400 SC201-4 0.5 400 SC201-6 0.5 40Q SURFACE SC902-2 1 35 SC311-4 0.5

mp2a5100

Abstract: ya868c12 YA868C15 2sk4004 YG865C10 F5049 diode 3a05 Diode SMD SJ 24 Diode SMD SJ 09 Diode SMD SJ 28
Contextual Info: 富士電機半導体 総 合 カ タ ログ FUJI SEMICONDUCTORS ● パワー MOSFET Power MOSFETs ● 整流ダイオード Rectifier diodes ● パワーデバイス Power devices ● 集積回路 Integrated circuits ● 圧力センサ Pressure sensors

Contextual Info: SCHOTTKY BARRIER DIODES 20 - 90Vo Its 20 - 30V O LT S Part Number •o A PAC KAG E SURFACE MOUNT M S flfttfe ERA82-004 *1 ERA83-004 *1 ERA81-004 *2 ERB83-004 *2 ERC81-004 *4 ERC81S-004 *4 ERC80-004 ERC62-004 ERC80M-004 ERC62M-004 AXIAL TO*220 TO-220F ,TQs22 F<5 ,

KS926S2

Abstract: YG911S2R YG912S6 YG963S6R PG905C4 YG961S6R kp926 CB903-4 ERA91-02 ERB91-02
Contextual Info: Low-loss Fast Recovery Diodes Quick Selection Guide Nov-01 LLD Single Package Lead VRRM Io Volts 200 O O 300 400 500 600 0.5 1.0 1.0 1.0 1.5 3.0 O SC(SMD) K-pack(SMD) K-pack TO-220AB TO-220F15 (Amps.) O O O O O O O O O O O IFSM (Amps.) 10 20 25 25 25 50

IF-10A

Abstract: YG902C2R
Contextual Info: 整流ダイオード / Rectifier Diodes • 低損失超高速ダイオード Low-Loss Fast Recovery Diodes（LLD） シングル 1 in one-package 形式 Device type SMD 絶対最大定格 対応品 Maximum rating VRRM IF AV ＊1 Volts Amps. ERA91-02

MIP0224SY

Abstract: 2SK1937 t201 transformer M51995AFP mip0224 ZUP-200 Nemic-Lambda CN d1fl20u 0134G ZUP20
Contextual Info: ZUP-200 SERIES RELIABILITY DATA DWG: 1A548-79-01 QA APPD APPD CHK DWG ç> ^ ^ A WR/llMAQciifltfi,Do^ovv PeUl c.y. ’hi/ ji j ci ‘I &3. S/ ÜOV-l-Lô<i fjn/~ &NEMIC-LAMBDA LTD. INDEX 1.MTBF; Calculated Value of MTBF R-1 2.Component Derating R-2-12 3.Main Components Temperature Rise