Y628100 Search Results

HY628100

Contextual Info: “ H Y U N D A I H Y 6 2 8 1 0 0 SEMICONDUCTOR _128KX 8-Bit C M O S SRAM M271200A-MAY92 FEATURES DESCRIPTION • High s p e e d - 70/85/100/120ns m ax. The H Y628100 is a high speed low power, 131,072 words by 8-bit C M O S static R A M fab­ ricated using H Y U N D A I’ S high perform ance

L0042

Abstract: HY628100ALP
Contextual Info: -HYUNDAI H Y628100A 128K X S e r ie s CMOS SRAM 8 -b it PRELIMINARY DESCRIPTION The Y628100A is a high-speed, low power and 131,072 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit

Contextual Info: Y628100B Series 128K X 8bit CMOS SRAM DESCRIPTION FEATURES T he Y628100B is a high speed, low pow er and 1M bit C M O S Static Random Access M em ory organized as 131,072 words by 8bit. The H Y628100B uses high perform ance CMOS process technology and designed for high speed