Y514100A Search Results

Contextual Info: »HYUNDAI HYM536410A M-Series 4M x 36-bit CMOS DRAM MODULE DESCRIPTION The H YM 53641O A is a 4M x 36-bit Fast page m ode C M O S D R A M module consisting of eight H Y 5 1 17400A in 24/26 pin S O J or T S O P IIa n d four H Y514100A in 20/26 pin S O J or T S O P II on a 72 pin glass-epoxy printed circuit board.

Contextual Info: •HYUNDAI Y514100A 4M x1, F as t Page m ode DESCRIPTION T h is f a m ily is a 4M b it d y n a m ic R A M o r g a n iz e d 4 ,1 9 4 ,3 0 4 x 1 -b it c o n f ig u r a t io n w ith F a s t P a g e m o d e C M O S D R A M s. E xte n d e d d a ta o u t m od e is a kind o f pa ge m ode w h ich is u se fu l fo r th e read o p e ra tio n . T h e c irc u it and p ro c e s s

Contextual Info: Y514100A Series »HYUNDAI 4M x 1 -bit CMOS DRAM DESCRIPTION The Y514100A is the 2nd generation and fast dynam ic RAM organized 4,194,304 x 1-bit. The Y514100A utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide

Contextual Info: Y514100A Series ’H Y U N D A I 4M x 1 -bit CMOS DRAM DESCRIPTION ORDERING INFORMATION This fa m ily is a 4M bit dynam ic RAM organized 4,194,304 x 1-bit configuration w ith C M O S DRAMs. The circuit and process design allow this d e vice to achieve high perform ance and low pow er dissipation.

HY514260

Abstract: HY5118160 HY5116160 HY5117404 HY51V65400 HY511616
Contextual Info: •'HYUNDAI — • TABLE OF CONTENTS 1. TABLE OF CONTENTS Index 2. PRODUCT QUIC REFERENCE DRAM Part Numbering Ordering Information 3. DRAM DATA SHEETS 1M-bit DRAM Page HY531000A. 1M x1-bit, 5V, F P .

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Abstract: Y514100A HYM532220
Contextual Info: QUICK REFERENCE D R A M M O D U L E Q U IC K R E F E R E N C E 3.3V DIMM TYPE S IZ E 8-B yte 8MB D E S C R IP T IO N 1M X 64 P A R T NO. EDO, SL HYM5V64104AX/ATX FPM, SL HYM5V64100AN/ATN SPEED 60/70/80 1K HY51V18164BJ/BT X 4 D, 1.00" 1K HY51V4400BJ/BT D, 1.00"