XGSR5035 Search Results

te 02214

Abstract: XGSR5035 XGSR5040 TWX910-950-1942 XGSR5030
Contextual Info: SßUARE » CO/ SS GENERAL 3918590 GENERAL » • ÜG022m SEMICONDUCTOR General Sem iconductor « Industries, Inc. ^ ÖS255GÖ 95D 5 02214 C 2R.„ XGSR5030 XGSR5035 XGSR5040 S O U H B B H COMPRNY T- 3 3 -/3 NPN SW ITCHING POWER TRANSISTORS This unique series utilizes General Semiconductor Industriès' C 2R * process which

Contextual Info: XGSR5035 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)350 V(BR)CBO (V)400 I(C) Max. (A)7.0 Absolute Max. Power Diss. (W)75 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)250uØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

BU1040

Abstract: ir431 IR430 2SC1865 IR423 BU104 2sc1865 nec ir411 RCA1B09 RCA410
Contextual Info: POWER SILICON NPN Item Number Part Number I C • 5 10 20 2S0917 SOT31303 2N6510 BU406 2SC3591 RCA1B04 2SC3175 2SC3176 BUY18S lR4TO" 25 30 35 · 40 45 50 55 60 65 70 75 · 80 RCA410 SML31305 SOT31305 2N6511 B0550B 2SC1864 2SC1867 RCA1B05 BUX62 SK3217 RCA1B09

Contextual Info: Ic = 7.0 AMPS DEVICE TYPE PACKAGE 2N3878 2N3879 2N5346 2N5347 2N5348 BVCbo VOLTS BVebo VOLTS P0 @ 100°C WATTS h FE @ VcE Min. Max. AMPS VOLTS TO-66 50 TO-66 75 TO-59/lso 80 TO-59/lso 80 TO-59/lso 100 120 120 80 80 100 7.0 7.0 6.0 6.0 6.0 20.0 20.0 34.0 34.0

BU409D

Abstract: rca1805 IR431 RCA410 RCA1B09 RCA423 sgs-ates transistors IR423 IR410 BU104
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V (BR)CEO Of) PD r 'CBO Max hFE fT ON) Min (Hz) Max (A) Max (s) (CE)Mt Toper Max (Ohms) Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . . . .10 . . . .15 .