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Catalog Datasheet	Type	Document Tags	PDF
WTC2305 Abstract: 24AUG ID35A Contextual Info: WTC2305DS P-Channel Enhancement Mode Power MOSFET DRAIN CURRENT 3 DRAIN -3.5 AMPERES DRAIN SOURCE VOLTAGE -8 VOLTAGE 1 GATE 2 Features: SOURCE 3 Super High Dense Cell Design For Low R DS ON R DS(ON) <68m Ω@V GS =-4.5V Rugged and Reliable *Simple Drive Requirement	Original	WTC2305DS OT-23 OT-23 24-Aug-09 WTC2305 24AUG ID35A	PDF

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WTC2305

Abstract: 24AUG ID35A
Contextual Info: WTC2305DS P-Channel Enhancement Mode Power MOSFET DRAIN CURRENT 3 DRAIN -3.5 AMPERES DRAIN SOURCE VOLTAGE -8 VOLTAGE 1 GATE 2 Features: SOURCE 3 *Super High Dense Cell Design For Low R DS ON R DS(ON) <68m Ω@V GS =-4.5V *Rugged and Reliable *Simple Drive Requirement

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WTC2305DS OT-23 OT-23 24-Aug-09 WTC2305 24AUG ID35A

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