VTP8350 Search Results

VTP8350

Contextual Info: VTP Process Photodiodes VTP8350 P A C K A G E D IM E N S IO N S inch mm P R O D U C T D E S C R IP T IO N CASE 11 Planar silicon photodiode mounted on a two lead ceramic substrate and coated with a thick layer of clear epoxy. These diodes exhibit low dark

VTP8350

Contextual Info: VTP Process Photodiodes VTP8350 PACKAGE DIMENSIONS inch mm CASE 11 CERAMIC CHIP ACTIVE AREA: .012 in2 (7.45 mm2) ABSOLUTE MAXIMUM RATINGS PRODUCT DESCRIPTION Planar silicon photodiode mounted on a two lead ceramic substrate and coated with a thick layer of clear epoxy. These diodes exhibit low

Contextual Info: VTP Process Photodiodes VTP8350 PACKAGE DIMENSIONS inch mm CASE 11 CERAMIC CHIP ACTIVE AREA: .012 in2 (7.45 mm2) ABSOLUTE MAXIMUM RATINGS PRODUCT DESCRIPTION Planar silicon photodiode mounted on a two lead ceramic substrate and coated with a thick layer of clear epoxy. These diodes exhibit low

Contextual Info: VTP Process Photodiodes VTP8350H PACKAGE DIMENSIONS inch mm CASE 11 CERAMIC CHIP ACTIVE AREA: .012 in2 (7.45 mm2) ABSOLUTE MAXIMUM RATINGS PRODUCT DESCRIPTION Planar silicon photodiode mounted on a two lead ceramic substrate and coated with a thick layer of clear epoxy. These diodes exhibit low

VTP8350H

Contextual Info: VTP Process Photodiodes VTP8350H PACKAGE DIMENSIONS inch mm CASE 11 CERAMIC CHIP ACTIVE AREA: .012 in2 (7.45 mm2) ABSOLUTE MAXIMUM RATINGS PRODUCT DESCRIPTION Planar silicon photodiode mounted on a two lead ceramic substrate and coated with a thick layer of clear epoxy. These diodes exhibit low

Contextual Info: VTP8350 VTP Process Photodiodes PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION CASE 11 Planar silicon photodiode mounted on a two lead ceramic substrate and coated with a thick layer of clear epoxy. These diodes exhibit low dark current under reverse bias and fast

C1383 NPN transistor collector base and emitter

Abstract: NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383
Contextual Info: Advanced sensor technologies for today’s breakthrough applications Table of Contents . www.optoelectronics.perkinelmer.com Table of Contents PerkinElmer Optoelectronics provides Digital Imaging, Sensor and Lighting technologies to speed the development of breakthrough applications for customers in biomedical,

VTP8651

Abstract: VTP1112 VTP4085 VTP1188S VTP11188S VTP1232 silicon photodiode array VTP1012 VTP7840 VTP100
Contextual Info: VTP Process Photodiodes VTP100 PACKAGE DIMENSIONS inch mm CASE 52 FLAT SIDELOOKER CHIP ACTIVE AREA: .012 in2 (7.45 mm2) PRODUCT DESCRIPTION Planar silicon photodiode in a molded plastic sidelooker package. The package material is infrared transmitting (blocking visible light).

H0A0872-n55

Abstract: H0A1405-1 H0A0865-L51 h0a1405 HOA708-1 HOA9 til78 phototransistor MOC70T3 ir diode TIL38 H0A1874-12
Contextual Info: Cross Reference Cross Reference Competition P/N Honeywell P/N Code Description Competition P/N 100 H0A0871-N55 B TRANS ASSY. PTX 5082-4205 CALL PHOTODIODES. P P P IN 101 H0A1872-12 BC TRANS ASSY. PTX 5082-4207 CALL PHOTODIODES. T018 TALL PIN 10501 H0A1872-1

VTP1220FBH

Abstract: VTS3082 VTB9412BH VTB1013B VTP1012H VTS3185H VTB8441BH VTD34H VTS3085H VTP4085H
Contextual Info: 1745-2012:QuarkCatalogTempNew 9/17/12 5:02 PM Page 1745 20 Photodiodes, Phototransistors and IR Emitters RoHS Electrical/Optical Characteristics @ 25°C Stock No. Fig. Dark Current IO Shunt Resist. RSH Spectral Application Range H=100 fC 2850K A/W @ nm H=0

Contextual Info: D SbE • B O B O b O ^ D D O l O a O 335 H V C T VTP Process Photodiodes E 6 & G V TP 83 50 , 50S, 51 T-41-51 VACTEC PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION CASE 11 Planar silicon photodiode mounted on a two lead ceramic substrate and coated with a th ick layer of clea r epoxy.

VTPB350S

Abstract: VTP8350 VTP8351 10VIV 06SR
Contextual Info: SbE D 30 30 b [ n 0 0 0 1 0 0 0 335 H V C T VTP Process Photodiodes V T P 8 3 5 0 , 5 0 S , 51 E G & G VACTEC T-41-51 PACKAGE DIMENSIONS inch <mm PRODUCT DESCRIPTION CASE 11 Planar silicon photodiode mounted on a two lead ceramic substrate and coated with a thick layer of clear epoxy.