VT64KS4 Search Results

IN4624

Contextual Info: VT64KS4/65KS4 PR E LIM IN AR Y 16,384 x 4 HIGH-SPEED 64K STATIC RAM FEATURES DESCRIPTION • 16,384 x 4-bit organization The VT64KS4 is a High-speed Static Random Access Memory organized as 16,384 words by four bits. • Access tim e— 35 ns max • Current— Operating: 120 mA max

UPD4362C-45

Abstract: UPD4362C-55 UPD4362C-70 VT64KS4-55 uPD4362C LA15
Contextual Info: - 6 4 K £ it 45 wxxm OC * 4 TAAC sax ns) TCAC •ax (ns) TOE nax (ns) CMOS S t a t i c RAM v * > 7 ft ft TOH (ns) TOD ■ax (ns) TWP a in (ns) TDS ■ in (ns) (1 6 3 8 4 X 4 ) % TDH ■ in (n s) TWD a in (ns) VT64KS4-55 VTI -10-80 55 30 5 20 45 30 5 10

Contextual Info: V L S I TECHNOLOGY INC 1VLSI T e c h n o lo g e TS D Ej T3ÖÖ347 QD017B1 □ | T * T -4 6 -2 3 -1 0 in c. A D V A N C E D IN F O R M A T IO N VT64KS4 • VT65KS4 16,384x4 HIGH-SPEED 64K SRAM FEATURES DESCRIPTION • 16,384 x 4-bit organization The V T 6 4 K S 4 Is a 64 K high-speed static random a cce ss memory thafis

vlsi technology

Abstract: fabrimex ta 7048 VT64KS4-55 ct 0765 rt hsm 002 22-PIN VT64KS4-55CC
Contextual Info: VT64KS4/65KS4 PR ELIM IN AR Y 16,384 x 4 HIGH-SPEED 64K STATIC RAM FEATURES DESCRIPTION • 16,384 x 4-bit organization The VT64KS4 is a High-speed Static Random Access Memory organized as 16,384 words by four bits. • Access tim e— 35 ns max • Current— Operating: 120 mA max

tc55416p

Abstract: MB81C74-35 MCM6288P30 LH5162-25 LH5162-35 LH5165-25 LH5165-35 M5M5188P-45 M5M5188P-55 MB81C74-25
Contextual Info: 71 6 4 K A X £ £ it £ °C TAAC max (ns) TCAC max (ns) TOR max (ns) -y TOH min (ns) CMOS -1- y TOD (ns) y TWP min (ns) S t a t i c & tt TDS ram (ns) RAM ( 1 6 3 8 4 x 4 ) m M . TDH rain (ns) TWD (ns) TWR max (ns) V D D o- V C C (VI 2 2 P i N I DD max (mA)

SR64K4-40

Abstract: tc55416p P4C188L-25 P4C188L-35 P4C188L-45 P4C188L-55 SR64K4-35 V61C62P70 SR64K4 UH6118-25
Contextual Info: - 72 6 4 K 4 X m £ tt £ CO TAAC max ns TCAC max (ns) TOE nax (ns) -, TOH (ns) CMOS + y TOD •ax (ns) '/ TWP S t a t i c RAM ( 1 6 3 8 4 x 4 ) tt i# (ns) TDS Bin (ns) « TDH min (ns) TWD •in (ns) TWR max (ns) 2 2 P ! N À * V D D or V C C I DD (V) (nA)