VSO05561 Search Results

BCR133W

Abstract: VSO05561
Contextual Info: BCR133W NPN Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R1=10k, R2 =10k 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07184 Type Marking BCR133W WCs Pin Configuration 1=B 2=E Package 3=C SOT323

BCR142W

Abstract: VSO05561
Contextual Info: BCR142W NPN Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R1=22k, R 2=47k 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07184 Type Marking BCR142W WZs Pin Configuration 1=B 2=E Package 3=C SOT323

BCR108W

Abstract: VSO05561
Contextual Info: BCR108W NPN Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in resistor R 1=2.2k, R 2=47k 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07184 Type Marking BCR108W WHs Pin Configuration 1=B 2=E Package 3=C SOT323

BCR112W

Abstract: VSO05561
Contextual Info: BCR112W NPN Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in resistor R 1=4.7k, R 2=4.7k 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07184 Type Marking BCR112W WFs Pin Configuration 1=B 2=E Package 3=C SOT323

BCR198W

Abstract: VSO05561 MARKING WRS
Contextual Info: BCR198W PNP Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R1=47k, R 2=47k 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07183 Type Marking BCR198W WRs Pin Configuration 1=B 2=E Package 3=C SOT323

VSO05561

Abstract: 818-25W
Contextual Info: BC 817W, BC 818W NPN Silicon AF Transistors 3 • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage 2 • Complementary types: BC 807W, BC 808W PNP 1 Pin Configuration VSO05561 Type

BCR146W

Abstract: VSO05561
Contextual Info: BCR146W NPN Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R1=47k, R 2=22k 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07184 Type Marking BCR146W WLs Pin Configuration 1=B 2=E Package 3=C SOT323

BAS40-04W

Abstract: BAS40-05W BAS40-06W VSO05561
Contextual Info: BAS40-04W.BAS40-06W 3 Silicon Schottky Diode
General-purpose diode for high-speed switching
Circuit protection 2
Voltage clamping
High-level detecting and mixing BAS40-04W 1 BAS40-05W BAS40-06W 3 3 3 1 2 1 EHA07005 VSO05561 2 1 2 EHA07006 EHA07004

wns marking

Abstract: BCR185W VSO05561
Contextual Info: BCR185W PNP Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R 1=10k, R2=47k 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07183 Type Marking BCR185W WNs Pin Configuration 1=B 2=E Package 3=C SOT323

BCR108W

Abstract: VSO05561
Contextual Info: BCR108W NPN Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in resistor R 1=2.2k, R 2=47k 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07184 Type Marking BCR108W WHs Pin Configuration 1=B 2=E Package 3=C SOT323

BAT15-05W

Abstract: VSO05561 noise diode
Contextual Info: BAT15-05W Silicon Schottky Diode
DBS mixer applications up to 12 GHz 3
Low noise figure
Low barrier type 2 1 VSO05561 BAT 15-05W C1/C2 3 1 2 A1 A2 EHA07179 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BAT15-05W

BAT68-04W

Abstract: BAT68-05W BAT68-06W BAT68W VSO05561
Contextual Info: BAT68W Silicon Schottky Diodes
For mixer applications in the VHF / UHF range 3
For high-speed switching applications 2 1 BAT68W BAT68-05W BAT68-04W 1 3 1 2 3 1 2 EHA07005 EHA07002 BAT68-06W 3 3 VSO05561 1 2 EHA07006 EHA07004 ESD: Electrostatic discharge sensitive device, observe handling precaution!

VSO05561

Contextual Info: BCR 166W PNP Silicon Digital Transistor 3 • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=4.7kΩ, R2=47kΩ 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07183 Type Marking BCR 166W WTs Pin Configuration 1=B 2=E Package

VSO05561

Contextual Info: BAW 56W Silicon Switching Diode Array 3 • For high-speed switching applications • Common anode 2 A1/A2 3 1 1 2 C1 C2 VSO05561 EHA07187 Type Marking BAW 56W A1s Pin Configuration 1 = C1 2 = C2 Package 3 = A1/A2 SOT-323 Maximum Ratings Parameter Symbol Diode reverse voltage

WFs transistor

Abstract: VSO05561
Contextual Info: BCR 112W NPN Silicon Digital Transistor 3 • Switching circuit, inverter, interface circuit, driver circuit • Built in resistor R 1=4.7kΩ, R 2=4.7kΩ 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07184 Type Marking BCR 112W WFs Pin Configuration 1=B 2=E Package

VSO05561

Contextual Info: BCR 191W PNP Silicon Digital Transistor 3 • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=22kΩ, R 2=22kΩ 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07183 Type Marking BCR 191W WOs Pin Configuration 1=B 2=E Package

Contextual Info: BAS 16W Silicon Switching Diode 3
For high-speed switching applications 2 1 VSO05561 1 3 EHA07002 Type Marking BAS 16W A6s Pin Configuration 1=A 2 = n.c. Package 3=C SOT-323 Maximum Ratings Parameter Symbol Diode reverse voltage VR 75 Peak reverse voltage

marking 5bs

Abstract: BC818W VSO05561 BC807-16W BC807-25W BC807-40W BC807W BC808-16W BC808-25W BC808-40W
Contextual Info: BC807W, BC808W PNP Silicon AF Transistors 3
For general AF applications
High collector current
High current gain
Low collector-emitter saturation voltage 2
Complementary types: BC817W, BC818W NPN 1 Pin Configuration VSO05561 Type Marking Package

BF799W

Abstract: VSO05561
Contextual Info: BF799W NPN Silicon RF Transistor 3
For linear broadband amplifier application up to 500 MHz
SAW filter driver in TV tuners 2 1 Type BF799W Marking LKs 1=B Pin Configuration 2=E 3=C VSO05561 Package SOT323 Maximum Ratings Parameter Symbol Collector-emitter voltage

RBS 200

Abstract: BF771W VSO05561
Contextual Info: BF771W NPN Silicon RF Transistor 3
For modulators and amplifiers in TV and VCR tuners 2 1 VSO05561 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF771W RBs Pin Configuration 1=B 2=E Package 3=C SOT323 Maximum Ratings

Contextual Info: BFR92W NPN Silicon RF Transistor 3
For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA
Complementary type: BFT 92W PNP 2 1 VSO05561 ESD: Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: BFR280W NPN Silicon RF Transistor 3
For low noise, low-power amplifiers in mobile communication systems pager, cordless telephone at collector currents from 0.2 mA to 8 m
fT = 7.5 GHz 2 F = 1.5 dB at 900 MHz 1 VSO05561 ESD: Electrostatic discharge sensitive device, observe handling precaution!

VSO05561

Contextual Info: BCR 185W PNP Silicon Digital Transistor 3 • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R 1=10kΩ, R2=47kΩ 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07183 Type Marking BCR 185W WNs Pin Configuration 1=B 2=E Package

Contextual Info: BFS17W NPN Silicon RF Transistor 3
For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA 2 1 Type Marking BFS17W MCs Pin Configuration 1=B 2=E VSO05561 Package 3=C SOT323 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage