VP2206 Search Results

VP2204N3

Abstract: VP2204 VP2210 VP2206N3
Contextual Info: VP 22A G ì Super te x inc. P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information b v dss •' ^DS O N b v dgs (max) If Standard Commercial Devices 40V 0.9Q -4A VP2204N3 VP2204ND 60V 0.9Q -4A VP2206N3 VP2206ND -100V 0.9Î2 -4A VP2210N3 VP2210ND

Contextual Info: VP2206 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► The Supertex VP2206 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing

2206N2

Contextual Info: VP2206 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► The Supertex VP2206 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing

Contextual Info: VP2206N2 Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V)20 I(D) Max. (A)1.6 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)8.0 @Pulse Width (s) (Condition)300u Absolute Max. Power Diss. (W)6 Minimum Operating Temp (øC)-55

VP2210ND

Abstract: VP2210N2
Contextual Info: VP2206 = j 1 1L j= L r «HHHMr | r' : L J - ' 7r C, vp22io ft P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information ^DS(ON BVdgs (max) -60V 0.9Q -100V 0.9Q Order Number / Package If b v dss/ TO-39 TO-92 DICEt -4A VP2206N2 VP2206N3 VP2206ND

Contextual Info: Supertex inc. VP2206 P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information b v dgs RdS ON (max) -60V 0.9£2 Order Number / Package If b v dss/ -4A TO-39 VP2206N2 TO-92 Diet VP2206N3 VP2206ND ÎM IL visua l screening a vailable Advanced DMOS Technology

Contextual Info: Supertex inc. VP2206 P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information RdS<ON -60V 0.9Q max) Order Number / Package TO-92 TO-39 If BVoss / BVoos -4A VP2206N2 Diet VP2206ND VP2206N3 *MJL visual screening available Advanced DMOS Technology

VP2206

Contextual Info: VP2206 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness (mils) Back Side Metal 70 85 11 ± 1.5 Au 1 (mils) VP2206 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain

VP2210

Contextual Info: VP2206 VP2210 Supertex inc. P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package ^OS ON TO-39 TO-92 DICEt -60V 0.90. -4A VP2206N2 VP2206N3 VP2206ND -100V 0.9Q -4A VP2210N2 VP2210N3 VP2210ND If BVoss / BV bqs (max) * MIL visual screening available

VP2210

Abstract: VP2206N2 VP2206 VP2206N3 VP2206ND VP2210N2 VP2210N3 VP2210ND To-92 60w 2a
Contextual Info: VP2206 VP2210 P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information † Order Number / Package BVDSS / BVDGS RDS ON (max) ID(ON) (min) TO-39 TO-92 DICE† -60V 0.9Ω -4A VP2206N2 VP2206N3 VP2206ND -100V 0.9Ω -4A VP2210N2 VP2210N3 VP2210ND

VP2206N3

Abstract: VP2206 VP2206N2
Contextual Info: VP2206 P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information † BVDSS / BVDGS RDS ON (max) ID(ON) (min) -60V 0.9Ω -4A Order Number / Package TO-39 TO-92 VP2206N2 VP2206N3 MIL visual screening available Advanced DMOS Technology High Reliability Devices

mos die

Abstract: VP2206 VP2206N2 VP2206N3 VP2206ND
Contextual Info: VP2206 P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information † Order Number / Package BVDSS / BVDGS RDS ON (max) ID(ON) (min) TO-39 TO-92 Die† -60V 0.9Ω -4A VP2206N2 VP2206N3 VP2206ND MIL visual screening available Advanced DMOS Technology

Contextual Info: Supertex inc. VP2206 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds High input impedance and high gain Excellent thermal stability

Contextual Info: VP2206N3 Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V)20 I(D) Max. (A)650m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)4.0 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)1 Minimum Operating Temp (øC)-55

Contextual Info: VP2206 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► The Supertex VP2206 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing

2206n2

Abstract: SIVP VP2206 VP2206N2 B06030
Contextual Info: VP2206 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► The Supertex VP2206 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing

VP2206N2

Abstract: VF52 2206N2 VP2206 vp5206
Contextual Info: Supertex inc. VP2206 P-Channel Enhancement-Mode Vertical DMOS FET Features ►► ►► ►► ►► ►► ►► ►► General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds

vp22a

Abstract: VP2210N2
Contextual Info: . V P 2 2A inc P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices R d S{ON -40V 0.9£i max) Order Num ber / Package If BVdss/ BV dgs TO-92 DICE* VP2204N2 VP2204N3 VP2204ND TO-39 -4A -60V 0.9Q -4A VP2206N2 VP2206N3

2206N2

Contextual Info: Supertex inc. VP2206 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ►► Free from secondary breakdown ►► Low power drive requirement ►► Ease of paralleling ►► Low CISS and fast switching speeds ►► High input impedance and high gain

Backlight Drivers

Abstract: P271 tp0610 TN2105 HV9123 Ring generator HV9112 LCD shutter
Contextual Info: Market Solutions Listing Telecom/Networking Solutions Hotswap/lnrush Current Limiter/Circuit Breaker ICs HV300/HV310 HV301/HV311 HV302/HV312 HV100/HV101 Off-Line Bias Supplies, High Voltage Linear Regulators LR6 LR7 SR036 SR037 LR8 HV9904 AC/DC, DC/DC Converters PWM ICs

TN0604N3

Abstract: HV5808 VQ1000 VP2210 HV50530 HV5708 TP0606N3 VP0635N5 VQ1001 replacement 2N6659 supertex
Contextual Info: Supertex Inc. OBSOLETE PRODUCT LIST Updated 12/13/02 Obsolete Part # Pkg Suggested Replacement Same pkg Suggested Replacement - Sim. Elec. (If same pkg alt is not close) Drop-In Alt Status 2N6659 VN2210N2 TN0104N3 obs 2N7007 TN5325N3 - obs AN0332 CG -

TDA8361E

Abstract: tda8362e VY17169-2 PCF7943 PCF7943AT ON4292 P87C380AER PCF7943AT/1091C420 PCF7943AT/1091C315 TDA8359J equivalent
Contextual Info: PHILIPS SEMICONDUCTORS Product discontinuation Notice DN46 December 31, 2001 SEE DN46 NOTICE LETTER FOR APPLICABLE TERMS, CONDITIONS AND CODE DEFINITIONS FOR THESE DISCONTINUED PRODUCTS. REFER TO PHILIPS WEB-SITE "http://www.semiconductors.philips.com/eol" FOR ADDED INFORMATION.

TO243AA

Abstract: TO-243AA tn0604n TO-236AB oc sot-89 TC2320TG TN2130K1-G LND150N8-G VN0104N3-G TO-236-AB
Contextual Info: Supertex, Inc. DMOS Products MSL and Maximum Temparture Ratings Device 2N7000-G 2N7002-G DN1509N8-G DN2470K4-G DN2530N3-G DN2530N8-G DN2535N3-G DN2535N5-G DN2540N3-G DN2540N5-G DN2540N8-G DN2625K4-G DN2625K6-G DN3135K1-G DN3135N8-G DN3145N8-G DN3525N8-G DN3535N8-G

mosfet cross reference

Abstract: pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode
Contextual Info: Selector Guides Selector Guides MOSFETs The Supertex enhancement-mode and depletion-mode MOSFET families utilize both vertical and lateral double diffused MOS processes. They feature low parasitic capacitances with interdigitated structures for high-frequency operation. Their low gate threshold voltage is