VBT30L60C Search Results
VBT30L60C Datasheets (4)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| VBT30L60C-E3/4W | Vishay Semiconductors | Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE SCHOTTKY 30A 60V TO-263AB | Original | 4 | |||
| VBT30L60C-E3/8W | Vishay Semiconductor Diodes Division | Discrete Semiconductor Products - Diodes - Rectifiers - Arrays - DIODE SCHOTTKY 30A 60V TO-263AB | Original | 94.31KB | |||
| VBT30L60CHM3/I | Vishay Semiconductor Diodes Division | Discrete Semiconductor Products - Diodes - Rectifiers - Arrays - DIODE ARRAY SCHOTTKY 60V TO263AB | Original | 94.31KB | |||
| VBT30L60C-M3/I | Vishay Semiconductors | 30A 60V TO-263 TRENCH SKY RECT | Original | 90.82KB |
VBT30L60C Price and Stock
Vishay Semiconductors VBT30L60C-E3-4WDIODE ARR SCHOTT 60V 15A TO263AB |
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VBT30L60C-E3-4W | Tube | 3,522 | 1 |
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Vishay Semiconductors VBT30L60CHM3-IDIODE ARR SCHOTT 60V 15A TO263AB |
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VBT30L60CHM3-I | Reel |
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Vishay Semiconductors VBT30L60C-M3-IDIODE ARR SCHOTT 60V 15A TO263AB |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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VBT30L60C-M3-I | Reel | 8,000 |
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Vishay Semiconductors VBT30L60C-E3-8WDIODE ARR SCHOTT 60V 15A TO263AB |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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VBT30L60C-E3-8W | Reel | 8,000 |
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Vishay Intertechnologies VBT30L60C-M3/I30A, 60V, TO-263, TRENCH SKY RECT. - Tape and Reel (Alt: VBT30L60C-M3/I) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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VBT30L60C-M3/I | Reel | 7 Weeks | 8,000 |
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VBT30L60C-M3/I |
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VBT30L60C-M3/I | Reel | 8,000 |
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VBT30L60C Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
VBT30L60CContextual Info: New Product VBT30L60C Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.32 V at IF = 5.0 A FEATURES TMBS • Trench MOS Schottky technology TO-263AB • Low forward voltage drop, low power losses • High efficiency operation |
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VBT30L60C O-263AB J-STD-020, 2002/95/EC 2002/96/EC 11-Mar-11 VBT30L60C | |
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Contextual Info: New Product VBT30L60C Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.32 V at IF = 5.0 A FEATURES TMBS • Trench MOS Schottky technology TO-263AB • Low forward voltage drop, low power losses • High efficiency operation |
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VBT30L60C O-263AB J-STD-020, 2002/95/EC 2002/96/EC 2011/65/EU 2002/95/EC. 2011/65/EU. | |
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Contextual Info: VBT30L60C-E3 www.vishay.com Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.32 V at IF = 5.0 A FEATURES TMBS • Trench MOS Schottky technology TO-263AB • Low forward voltage drop, low power losses • High efficiency operation |
Original |
VBT30L60C-E3 O-263AB J-STD-020, VBT30L60C 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
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Contextual Info: New Product VBT30L60C Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.32 V at IF = 5.0 A FEATURES TMBS • Trench MOS Schottky technology TO-263AB • Low forward voltage drop, low power losses • High efficiency operation |
Original |
VBT30L60C O-263AB J-STD-020, 2002/95/EC 2002/96/EC 2002/95/EC. 2011/65/EU. JS709A | |
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Contextual Info: VBT30L60C-E3 www.vishay.com Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.32 V at IF = 5.0 A FEATURES TMBS • Trench MOS Schottky technology TO-263AB • Low forward voltage drop, low power losses • High efficiency operation |
Original |
VBT30L60C-E3 O-263AB J-STD-020, VBT30L60C 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 |