UT40N03 Search Results

UT40N03 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT40N03T Power MOSFET 30V, 28A N-CHANNEL ENHANCEMENT MODE POWER MOSFET FEATURES * RDS ON = 25mΩ @VGS = 10 V * Low capacitance * Optimized gate charge * Fast switching capability * Avalanche energy specified SYMBOL 2.Drain	Original	ut40n03t ut40n03tl-ta3-t ut40n03tg-ta3-t ut40n03tl-tm3-t +6ut40n03tg-tm3-t ut40n03tl-tn3-r ut40n03tg-tn3-r ut40n03tl-tn3-t ut40n03tg-tn3-t ut40n03tl-tq2-r	PDF
A1693 Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT40N03 Power MOSFET N-CHANNEL ENHANCEMENT MODE FEATURES * RDS ON = 17mΩ @VGS = 10 V * Low capacitance * Optimized gate charge * Fast switching capability * Avalanche energy specified SYMBOL 2.Drain *Pb-free plating product number: UT40N03L	Original	ut40n03 ut40n03l ut40n03-tn3-r ut40n03l-tn3-r +5ut40n03-tn3-t ut40n03l-tn3-t o-252 qw-r502-160 a1693	PDF
UT40N03G Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT40N03 Power MOSFET N-CHANNEL ENHANCEMENT MODE FEATURES * RDS ON = 17mΩ @VGS = 10 V * Low capacitance * Optimized gate charge * Fast switching capability * Avalanche energy specified SYMBOL 2.Drain Lead-free: UT40N03L	Original	ut40n03 ut40n03l ut40n03g ut40n03-tn3-r +4ut40n03l-tn3-r ut40n03g-tn3-r o-252 qw-r502-160	PDF
UT40N03L Abstract: UT40N03G UT40N03T Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT40N03T Power MOSFET N-CHANNEL ENHANCEMENT MODE FEATURES * RDS ON = 25mΩ @VGS = 10 V * Low capacitance * Optimized gate charge * Fast switching capability * Avalanche energy specified SYMBOL 2.Drain Lead-free: UT40N03L	Original	ut40n03t ut40n03l ut40n03g ut40n03t-tn3-r +6ut40n03t-tn3-t ut40n03t-tq2-r ut40n03t-tq2-t ut40n03tl-tn3-r ut40n03tl-tn3-t ut40n03tl-tq2-r	PDF
Contextual Info: UNISONICTECHNOLOGIESCO., LTD UT40N03T Power MOSFET 3 0 V , 2 8 A N -CH AN N EL EN H AN CEM EN T M ODE POWER M OSFET ̈ FEAT U RES * RDS ON = 25m @VGS = 10 V * Low capacitance * Optimized gate charge * Fast switching capability * Avalanche energy specified	Original	ut40n03t ut40n03tl-ta3-t ut40n03tg-ta3-t ut40n03tl-tm3-t +6ut40n03tg-tm3-t ut40n03tl-tn3-r ut40n03tg-tn3-r ut40n03tl-tn3-t ut40n03tg-tn3-t ut40n03tl-tq2-r	PDF
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT40N03T Power MOSFET 30V, 28A N-CHANNEL ENHANCEMENT MODE POWER MOSFET FEATURES * RDS ON = 25mΩ @VGS = 10 V * Low capacitance * Optimized gate charge * Fast switching capability * Avalanche energy specified SYMBOL 2.Drain	Original	ut40n03t ut40n03tl-ta3-t ut40n03tg-ta3-t ut40n03tl-tm3-r +6ut40n03tg-tm3-r ut40n03tl-tn3-r ut40n03tg-tn3-r ut40n03tl-tn3-t ut40n03tg-tn3-t ut40n03tl-tq2-r	PDF
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT40N03T Power MOSFET N-CHANNEL ENHANCEMENT MODE FEATURES * RDS ON = 25mΩ @VGS = 10 V * Low capacitance * Optimized gate charge * Fast switching capability * Avalanche energy specified 1 TO-263 SYMBOL 2.Drain *Pb-free plating product number: UT40N03TL	Original	ut40n03t o-263 ut40n03tl ut40n03t-tq2-r +4ut40n03tl-tq2-r ut40n03t-tq2-t ut40n03tl-tq2-t qw-r502-172	PDF
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT40N03T Power MOSFET N-CHANNEL ENHANCEMENT MODE FEATURES * RDS ON = 25mΩ @VGS = 10 V * Low capacitance * Optimized gate charge * Fast switching capability * Avalanche energy specified SYMBOL 2.Drain 1.Gate 3.Source	Original	ut40n03t ut40n03tl-ta3-t ut40n03tg-ta3-t ut40n03tl-tn3-r +6ut40n03tg-tn3-r ut40n03tl-tn3-t ut40n03tg-tn3-t ut40n03tl-tq2-r ut40n03tg-tq2-r ut40n03tl-tq2-t	PDF
ut40n03 Abstract: UT-40 a1693 Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT40N03 Power MOSFET 40 Amps, 30 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UT40N03 power MOSFET provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness	Original	ut40n03 ut40n03l-tn3-r ut40n03g-tn3-r ut40n03l-tm3-t +6ut40n03g-tm3-t o-252 o-251 qw-r502-160 ut-40 a1693	PDF
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT40N03T Power MOSFET 30V, 28A N-CHANNEL ENHANCEMENT MODE POWER MOSFET  FEATURES * RDS ON < 25mΩ @VGS = 10 V * Low capacitance * Optimized gate charge * Fast switching capability * Avalanche energy specified  SYMBOL	Original	ut40n03t ut40n03tl-ta3-t ut40n03tg-ta3-t o-220 +6ut40n03tl-tm3-t ut40n03tg-tm3-t o-251 ut40n03tl-tn3-r ut40n03tg-tn3-r o-252	PDF