UT3409 Search Results
UT3409 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
diode 244Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT3409 Power MOSFET P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UTC UT3409 uses advanced trench technology to provide excellent RDS ON and low gate charge. This device is suitable for use as a load switch or in PWM applications. |
Original |
ut3409ut3409l-ae2-rut3409g-ae2-rut3409l-ae3-r+5 | |
|
Contextual Info: UNISONICTECHNOLOGIESCO., LTD UT3409 Power MOSFET P-CH AN N EL EN H AN CEM EN T M ODE FI ELD EFFECT T RAN SI ST OR ̈ DESCRI PT I ON The UTC UT3409 uses advanced trench technology to provide excellent RDS ON and low gate charge. This device is suitable for use |
Original |
ut3409ut3409l-ae2-rut3409g-ae2-rut3409l-ae3-r+4 | |
UT3409Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT3409 Power MOSFET P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UTC UT3409 uses advanced trench technology to provide excellent RDS ON and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product |
Original |
ut34091111ut3409lut3409gqw-r502-244 | |
|
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT3409 Power MOSFET P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UTC UT3409 uses advanced trench technology to provide excellent RDS ON and low gate charge. This device is suitable for use as a load switch or in PWM applications. |
Original |
ut3409ut3409l-ae3-rut3409g-ae3-rot-23+1 | |
|
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT3409 Power MOSFET P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UTC UT3409 uses advanced trench technology to provide excellent RDS ON and low gate charge. This device is suitable for use as a load switch or in PWM applications. |
Original |
ut3409ut3409g-ae2-rut3409g-ae3-rut3409g-al3-r+4 |