UNR2213 Search Results

Contextual Info: Composite Transistors XN04382 Silicon NPN epitaxial planar type Tr1 Silicon PNP epitaxial planar type (Tr2) Unit: mm 2.90+0.20 –0.05 1.9±0.1 0.95 0.95 4 5 6 3 2 0.30+0.10 –0.05 • Basic Part Number 0.50+0.10 –0.05 • UNR2213 + UNR2121 Unit 50 V

UNR2213

Abstract: XN01213G
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN01213G Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For switching/digital circuits • Features ■ Basic Part Number • UNR2213 x 2 Parameter

XP04213

Abstract: UNR2213
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP04213 Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For digital circuits • Package ■ Features ■ Basic Part Number • UNR2213 x 2 Parameter

UNR2213

Abstract: XP04213
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP04213 Silicon NPN epitaxial planar type For digital circuits • Package ■ Features • UNR2213 x 2 • Code SMini6-G1 • Pin Name 1: Emitter (Tr1) 2: Base (Tr1) 3: Collector (Tr2)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP04213 Silicon NPN epitaxial planar type For digital circuits • Package M Di ain sc te on na tin nc ue e/ d ■ Features ■ Basic Part Number • UNR2213 x 2 Parameter

UN2122

Abstract: UN2213 UNR2122 UNR2213 XN04381 XN4381
Contextual Info: Composite Transistors XN04381 XN4381 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 3 2 1 0.30+0.10 –0.05 • Basic Part Number 0.50+0.10 –0.05 • UNR2213 (UN2213) + UNR2122 (UN2122)

UNR2121

Abstract: UNR2213 XN04382
Contextual Info: Composite Transistors XN04382 Silicon NPN epitaxial planar type Tr1 Silicon PNP epitaxial planar type (Tr2) 3 2 0.50+0.10 –0.05 • UNR2213 + UNR2121 Unit 50 V Collector-emitter voltage (Base open) VCEO 50 V IC 100 mA Collector-base voltage (Emitter open)

MIP2F3

Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the

ma3df25

Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
Contextual Info: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP03383G Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) For digital circuits • Package  Two elements incorporated into one package (Transistors with built-in resistor)

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP04313 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) M Di ain sc te on na tin nc ue e/ d For digital circuits • Package • Two elements incorporated into one package

UNR2113

Abstract: UNR2213 UP04313
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04313 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) 4 • Features ■ Basic Part Number 1 5˚ 2 3 (0.50)(0.50) 1.00±0.05 1.60±0.05 (0.20)

UN2113

Abstract: UN2213 UNR2113 UNR2213 XP04313 XP4313
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP04313 (XP4313) Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) 0.2±0.05 5 0.12+0.05 –0.02 1.25±0.10 2.1±0.1 4 5˚ • Two elements incorporated into one package

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN01213 (XN1213) Silicon NPN epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 5 2 0.4±0.2 • Two elements incorporated into one package (Emitter-coupled transistors with built-in resistor)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04313 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) 4 • Features ■ Basic Part Number 1 5˚ 2 3 (0.50)(0.50) 1.00±0.05 1.60±0.05 (0.20)

UNR2114

Abstract: UNR2213 XP03390
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP03390 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) Unit: mm (0.425) For digital circuits M Di ain sc te on na tin nc ue e/ d 0.20±0.05

UNR2113

Abstract: UNR2213 UP04313
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04313 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) For switching/digital circuits M Di ain sc te on na tin nc ue e/ d Collector-base voltage

UP03383G

Abstract: UNR211F UNR2213
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP03383G Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) For digital circuits • Package  Two elements incorporated into one package (Transistors with built-in resistor)

UNR2213

Abstract: XN06213G
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN06213G Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For switching/digital circuits • Package ■ Features • Code Mini6-G3 • Pin Name ue pl d in

UP04383G

Abstract: UNR211F UNR2213 transistors 10 KW
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04383G Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) For digital circuits • Package  Two elements incorporated into one package (transistors with built-in resistor)

UNR211F

Abstract: UNR2213 XP03383
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP03383 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) For digital circuits • Package • Two elements incorporated into one package (Transistors with built-in resistor)

UNR211F

Abstract: UNR2213 XP03383
Contextual Info: Composite Transistors XP03383 Silicon NPN epitaxial planar type Tr1 Silicon PNP epitaxial planar type (Tr2) Unit: mm (0.425) For switching/digital circuits 0.20±0.05 5 0.12+0.05 –0.02 4 5˚ • Two elements incorporated into one package (Transistors with built-in resistor)

UN2213

Abstract: UNR2213 XP06213 XP6213
Contextual Info: Composite Transistors XP06213 XP6213 Silicon NPN epitaxial planar type (0.425) For switching/digital circuits 0.2±0.05 6 Unit: mm 5 0.12+0.05 –0.02 4 5˚ • Two elements incorporated into one package (Transistors with built-in resistor) • Reduction of the mounting area and assembly cost by one half