UNR1210 Search Results

UN1210

Abstract: UNR1210 XP06210 XP6210
Contextual Info: Composite Transistors XP06210 XP6210 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits 1 6 2 5 3 4 +0.05 UNR1210(UN1210) x 2 elements • Absolute Maximum Ratings 0 to 0.1 ● 0.12 –0.02 ■ Basic Part Number of Element 0.7±0.1

UN1210

Abstract: UNR1210 XP04210 XP4210 panasonic VF-8Z
Contextual Info: Composite Transistors XP04210 XP4210 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits 1 6 2 5 3 4 UNR1210(UN1210) x 2 elements • Absolute Maximum Ratings (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage

UN1210

Abstract: UNR1210 XP02210 XP2210
Contextual Info: Composite Transistors XP02210 XP2210 Silicon NPN epitaxial planer transistor Unit: mm 0.2±0.05 For switching/digital circuits 2.1±0.1 1 2 1.25±0.1 0.425 5 3 4 +0.05 0.9± 0.1 UNR1210(UN1210) x 2 elements 0 to 0.1 ● 0.7±0.1 • Basic Part Number of Element

UN1210

Abstract: UNR1210 XN02210 XN2210
Contextual Info: Composite Transistors XN02210 XN2210 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 UNR1210(UN1210) x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element

UN1210

Abstract: UNR1210 XP01210 XP1210
Contextual Info: Composite Transistors XP01210 XP1210 Silicon NPN epitaxial planer transistor Unit: mm 0.2±0.05 For switching/digital circuits 2.1±0.1 1 2 1.25±0.1 0.425 5 3 4 +0.05 0.9± 0.1 UNR1210(UN1210) x 2 elements • Absolute Maximum Ratings 0 to 0.1 ● 0.7±0.1

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

UNR1218

Abstract: UNR1219 UNR1215 UNR1216 UNR1217 UNR1211 UNR1212 UNR1213 UNR1214
Contextual Info: Transistors with built-in Resistor / 121D/121E/121F/121K/121L / 121D/121E/121F/121K/121L Unit: mm 2.5±0.1 • Features (1.0) R 0.7 ● Costs can be reduced through downsizing of the equipment and

XN421

Abstract: UN1210 UNR1210 XN04210 XN4210 panasonic VF-8Z
Contextual Info: Composite Transistors XN04210 XN4210 Silicon NPN epitaxial planer transistor ● 3 2 0.4±0.2 Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 2.8+0.2 –0.3 6

UN1210

Abstract: UNR1210 XN01210 XN1210
Contextual Info: Composite Transistors XN01210 XN1210 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 -0.3 +0.25 0.65±0.15 +0.1 +0.1 1 : Collector (Tr1) 2 : Collector (Tr2) 3 : Base (Tr2) (Ta=25˚C) Parameter Symbol Ratings Unit

UNR1210

Abstract: UNR1211 UNR1212 UNR1213 UNR1214 UNR1215 UNR1216 UNR1217 UNR1218 UNR1219
Contextual Info: Transistors with built-in Resistor UNR121x Series UN121x Series Silicon NPN epitaxial planar type Unit: mm For digital circuits 2.5±0.1 (1.0) R 0.9 R 0.7 0.55±0.1 (R1) 47 kΩ 10 kΩ 22 kΩ 47 kΩ 10 kΩ 10 kΩ 4.7 kΩ 22 kΩ 0.51 kΩ 1 kΩ 47 kΩ

121f

Abstract: UNR1211 UNR1212 UNR1213 UNR1214 UNR1215 UNR1216 UNR1217 UNR1218 UNR1219
Contextual Info: Transistors with built-in Resistor / 121D/121E/121F/121K/121L / 121D/121E/121F/121K/121L Unit: mm 2.5±0.1 • Features (1.0) R 0.7 ● Costs can be reduced through downsizing of the equipment and

Contextual Info: Transistors with built-in Resistor UNR121x Series UN121x Series Silicon NPN epitaxial planar type Unit: mm 2.5±0.1 (1.0) R 0.9 M Di ain sc te on na tin nc ue e/ d • Costs can be reduced through downsizing of the equipment and reduction of the number of parts

Contextual Info: Composite Transistors XN02210 XN2210 Silicon NPN epitaxial planer transistor Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 5 1.50+0.25 –0.05 4 Two elements incorporated into one package. (Base-coupled transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half.

UN1210

Abstract: UNR1210 XP01210 XP1210
Contextual Info: Composite Transistors XP01210 XP1210 Silicon NPN epitaxial planer transistor 0.20±0.05 5 ● 0.12+0.05 –0.02 4 5° Two elements incorporated into one package. (Emitter-coupled transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half.

UN1210

Abstract: UNR1210 XN02210 XN2210
Contextual Info: Composite Transistors XN02210 XN2210 Silicon NPN epitaxial planer transistor Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 0.16+0.10 –0.06 M Di ain sc te on na tin nc ue e/ d 1.50+0.25 –0.05 5 Two elements incorporated into one package. (Base-coupled transistors with built-in resistor)

UN1210

Abstract: UNR1210 XP02210 XP2210
Contextual Info: Composite Transistors XP02210 XP2210 Silicon NPN epitaxial planer transistor 0.20±0.05 5 ● 0.12+0.05 –0.02 4 5° Two elements incorporated into one package. (Base-coupled transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half.

UN1210

Abstract: UNR1210 XN01210 XN1210
Contextual Info: Composite Transistors XN01210 XN1210 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) ● 2 2.8+0.2 –0.3 5 1.50+0.25 –0.05 4 0.4±0.2 ● 3 Two elements incorporated into one package.

UN1210

Abstract: UNR1210 XP06210 XP6210 XP621
Contextual Info: Composite Transistors XP06210 XP6210 Silicon NPN epitaxial planer transistor 0.2±0.05 5 6 ● 4 Features 0.2±0.1 Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half.

panasonic VF-8Z

Abstract: UN1210 UNR1210 XN04210 XN4210
Contextual Info: Composite Transistors XN04210 XN4210 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 –0.3 +0.25 • Absolute Maximum Ratings +0.1 +0.1 0 to 0.05 0.4±0.2 (Ta=25˚C) Symbol Ratings Unit Collector to base voltage

121F

Abstract: UNR1211 UNR1212 UNR1213 UNR1214 UNR1215 UNR1216 UNR1217 UNR1218 UNR1219
Contextual Info: Transistors with built-in Resistor / 121D/121E/121F/121K/121L / 121D/121E/121F/121K/121L Unit: mm 6.9±0.1 2.5±0.1 Costs can be reduced through downsizing of the equipment and

UN1210

Abstract: UNR1210 XN02210 XN2210
Contextual Info: Composite Transistors XN02210 XN2210 Silicon NPN epitaxial planer transistor Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) ● 5 Two elements incorporated into one package. (Base-coupled transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half.

UNR1210

Abstract: UNR1211 UNR1212 UNR1213 UNR1214 UNR1215 UNR1216 UNR1217 UNR1218 UNR1219
Contextual Info: Transistors with built-in Resistor UNR121x Series UN121x Series Silicon NPN epitaxial planar type Unit: mm For digital circuits (1.0) 4.1±0.2 2.0±0.2 2.4±0.2 (0.85) 0.45±0.05 0.55±0.1 (R1) 47 kΩ 10 kΩ 22 kΩ 47 kΩ 10 kΩ 10 kΩ 4.7 kΩ 22 kΩ

panasonic VF-8Z

Abstract: UN1210 UNR1210 XP04210 XP4210
Contextual Info: Composite Transistors XP04210 XP4210 Silicon NPN epitaxial planer transistor 0.2±0.05 5 6 ● 4 Features 0.2±0.1 Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half.