TSUS4300 Search Results

Contextual Info: TSUS4300 Vishay Telefunken GaAs Infrared Emitting Diode in ø 3 mm T–1 Package Description TSUS4300 is an infrared emitting diode in standard GaAs on GaAs technology, molded in a clear, blue tinted plastic package. Its lens provides a high radiant intensity without external optics.

Contextual Info: TSUS4300 www.vishay.com Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs FEATURES • Package type: leaded • Package form: T-1 • Dimensions in mm : Ø 3 • Peak wavelength: λp = 950 nm • High reliability • Angle of half intensity: ϕ = ± 16°

TSUS4300

Contextual Info: TSUS4300 Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs Description TSUS4300 is an infrared emitting diode in standard GaAs on GaAs technology, molded in a clear, blue tinted plastic package. Its lens provides a high radiant intensity without external optics.

Contextual Info: Tem ic TSUS4300 S e m i c o n d u c t o r s GaAs Infrared Emitting Diode in 0 3 mm T -l Package Description TSUS4300 is an infrared emitting diode in standard GaAs on GaAs technology, molded in a clear, blue tinted plastic package. Its lens provides a high radiant intensity without

TSUS4300

Abstract: TEFT4300
Contextual Info: TSUS4300 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs FEATURES • Package type: leaded • Package form: T-1 • Dimensions in mm : ∅ 3 • Peak wavelength: λp = 950 nm • High reliability • Angle of half intensity: ϕ = ± 16°

TSUS4300

Contextual Info: TSUS4300 Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs Description TSUS4300 is an infrared emitting diode in standard GaAs on GaAs technology, molded in a clear, blue tinted plastic package. Its lens provides a high radiant intensity without external optics.

TSUS4300

Abstract: TEFT4300 temic infrared 7979E
Contextual Info: TSUS4300 GaAs Infrared Emitting Diode in ø 3 mm T–1 Package Description TSUS4300 is an infrared emitting diode in standard GaAs on GaAs technology, molded in a clear, blue tinted plastic package. Its lens provides a high radiant intensity without external optics.

TSUS4300

Abstract: TEFT4300
Contextual Info: TSUS4300 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs FEATURES • Package type: leaded • Package form: T-1 • Dimensions in mm : ∅ 3 • Peak wavelength: λp = 950 nm • High reliability • Angle of half intensity: ϕ = ± 16°

7447 IC

Abstract: IC 7447 A ic 7447 TELEFUNKEN EM IC 7447 photo
Contextual Info: T em ic TSUS4300 Semiconductors GaAs Infrared Emitting Diode in 0 3 mm T-l Package Description TSUS4300 is an infrared emitting diode in standard GaAs on GaAs technology, molded in a clear, blue tinted plastic package. Its lens provides a high radiant intensity without

TSUS4300

Contextual Info: TSUS4300 Vishay Telefunken GaAs Infrared Emitting Diode in ø 3 mm T–1 Package Description TSUS4300 is an infrared emitting diode in standard GaAs on GaAs technology, molded in a clear, blue tinted plastic package. Its lens provides a high radiant intensity without external optics.

Contextual Info: TSUS4300 www.vishay.com Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs FEATURES • • • • • • • • • • • 94 8636-1 Package type: leaded Package form: T-1 Dimensions in mm : Ø 3 Peak wavelength: λp = 950 nm High reliability

TSUS4300

Contextual Info: TSUS4300 Vishay Telefunken GaAs Infrared Emitting Diode in ø 3 mm T–1 Package Description TSUS4300 is an infrared emitting diode in standard GaAs on GaAs technology, molded in a clear, blue tinted plastic package. Its lens provides a high radiant intensity without external optics.

Contextual Info: TSUS4300 VISHAY Vishay Semiconductors GaAs Infrared Emitting Diode in ∅ 3 mm T-1 Package Description TSUS4300 is an infrared emitting diode in standard GaAs on GaAs technology, molded in a clear, blue tinted plastic package. Its lens provides a high radiant

Contextual Info: TSUS4300 www.vishay.com Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs FEATURES • • • • • • • • • • • 94 8636-1 Package type: leaded Package form: T-1 Dimensions in mm : Ø 3 Peak wavelength: λp = 950 nm High reliability

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Abstract: TSUS4300
Contextual Info: TSUS4300 Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs Description TSUS4300 is an infrared emitting diode in standard GaAs on GaAs technology, molded in a clear, blue tinted plastic package. Its lens provides a high radiant intensity without external optics.

TSUS4300

Contextual Info: TSUS4300 Vishay Semiconductors GaAs Infrared Emitting Diode in ø 3 mm T–1 Package Description TSUS4300 is an infrared emitting diode in standard GaAs on GaAs technology, molded in a clear, blue tinted plastic package. Its lens provides a high radiant intensity without external optics.

Contextual Info: TSUS4300 www.vishay.com Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs FEATURES • • • • • • • • • • • 94 8636-1 Package type: leaded Package form: T-1 Dimensions in mm : Ø 3 Peak wavelength: λp = 950 nm High reliability

TEFD4300

Abstract: APPLICATION CIRCUIT OF TSAL4400
Contextual Info: TEFD4300 www.vishay.com Vishay Semiconductors Silicon PIN Photodiode FEATURES • Package type: leaded • Package form: T-1 • Dimensions in mm : Ø 3 • High radiant sensitivity • Suitable for visible and near infrared radiation • Fast response times

Contextual Info: TEFT4300 www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: T-1 • Dimensions in mm : Ø 3 • High radiant sensitivity • Daylight blocking filter matched with 940 nm emitters • Fast response times

TEFT4300

Abstract: 8239 Silicon NPN Phototransistor TSAL4400 TSUS4300 npn phototransistor 86-36-2
Contextual Info: TEFT4300 Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant FEATURES • Package type: leaded • Package form: T-1 • Dimensions in mm : Ø 3 • High radiant sensitivity • Daylight blocking filter matched with 940 nm emitters • Fast response times

Contextual Info: TEFD4300 www.vishay.com Vishay Semiconductors Silicon PIN Photodiode FEATURES • Package type: leaded • Package form: T-1 • Dimensions in mm : Ø 3 • High radiant sensitivity • Suitable for visible and near infrared radiation • Fast response times

tfm 5380

Abstract: TFM 5360 TFM 5300 ir TFM 5330 tfm 5560 TFM 5300 TFM 1380 T Temic TFM 5360 u2506b TFM 5400
Contextual Info: TFMx IR Detector Photomodules TELEFUNKEN Semiconductors 06.96 Table of Contents General Information. 1 Introduction . 1

TEFT4300

Abstract: TSUS4300 950nm
Contextual Info: TEFT4300 Vishay Semiconductors Silicon NPN Phototransistor Description TEFT4300 is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a standard T–1 ø 3 mm plastic package. The epoxy package itself is an IR filter, spectrally

mdd 2605

Abstract: HCPL 1458 8 pin opto KS0108 128X64 graphical LCD mdd 2601 transistor chn 952 hitachi INVC 618 Data Vision P135 H4 led smd headlight bulb transistor CHN 64 946 transistor chn 943
Contextual Info: 755 Technical portal and online community for Design Engineers - www.element-14.com Optoelectronics, Solid State Illumination & Displays Page Alphanumeric LCD Modules . . . . . . . . . . . . . . . . . 903 Alphanumeric LED Displays . . . . . . . . . . . . . . . . . 900